TY - JOUR

T1 - Formation of vanadium dioxide nanocrystal arrays via post-growth annealing for stable and energy-efficient switches

AU - Kapoguzov, K. E.

AU - Mutilin, S. V.

AU - Lysenko, N. I.

AU - Kichay, V. N.

AU - Yakovkina, L. V.

AU - Voloshin, B. V.

AU - Seleznev, V. A.

N1 - Сведения о финансировании Russian Academy of Sciences Ministry of Education and Science of the Russian Federation Russian Science Foundation 21-19-00873

PY - 2025/2

Y1 - 2025/2

N2 - The abrupt and reversible semiconductor-metal phase transition in vanadium dioxide nanocrystals has attracted considerable attention for potential applications in oxide electronics, including neuromorphic systems. This study presents a systematic investigation of post-growth annealing conditions for the formation of single VO2 M-phase nanocrystals arrays from VOx films synthesized by atomic layer deposition. The composition of the initial VOx films and the annealing parameters were found to significantly affect the morphology, phase composition and electrical properties of the obtained single nanocrystal arrays. Our results demonstrate that the formation of VO2 M-phase nanocrystal arrays occurs at annealing temperatures of 650 °C and above, irrespective of the initial film composition. More homogeneous in size nanocrystals are formed from initial VOx films with higher V+4 content. The structures with the initial V+4 content of 60 % annealed at 650 °C for 2 h demonstrates the resistive switching with an energy less than 150 fJ, and a total number of stable switching cycles more than 101⁰. Our results pave the way for the novel energy-efficient nanoelectronic and nanophotonic devices based on VO₂ nanoparticles.

AB - The abrupt and reversible semiconductor-metal phase transition in vanadium dioxide nanocrystals has attracted considerable attention for potential applications in oxide electronics, including neuromorphic systems. This study presents a systematic investigation of post-growth annealing conditions for the formation of single VO2 M-phase nanocrystals arrays from VOx films synthesized by atomic layer deposition. The composition of the initial VOx films and the annealing parameters were found to significantly affect the morphology, phase composition and electrical properties of the obtained single nanocrystal arrays. Our results demonstrate that the formation of VO2 M-phase nanocrystal arrays occurs at annealing temperatures of 650 °C and above, irrespective of the initial film composition. More homogeneous in size nanocrystals are formed from initial VOx films with higher V+4 content. The structures with the initial V+4 content of 60 % annealed at 650 °C for 2 h demonstrates the resistive switching with an energy less than 150 fJ, and a total number of stable switching cycles more than 101⁰. Our results pave the way for the novel energy-efficient nanoelectronic and nanophotonic devices based on VO₂ nanoparticles.

KW - Atomic-layer deposition

KW - Nanocrystals

KW - Post-growth annealing

KW - Resistive switching

KW - Semiconductor-to-metal phase transition

KW - Vanadium dioxide

UR - https://www.mendeley.com/catalogue/7ea42b0b-f425-3a01-92bd-843043ce11b9/

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85210127169&origin=inward&txGid=b7baec1f13333b4fd71e51e23d70dde9

U2 - 10.1016/j.physe.2024.116165

DO - 10.1016/j.physe.2024.116165

M3 - Article

VL - 167

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

M1 - 116165

ER -