Research output: Contribution to journal › Article › peer-review
Formation of vanadium dioxide nanocrystal arrays via post-growth annealing for stable and energy-efficient switches. / Kapoguzov, K. E.; Mutilin, S. V.; Lysenko, N. I. et al.
In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 167, 116165, 02.2025.Research output: Contribution to journal › Article › peer-review
}
TY - JOUR
T1 - Formation of vanadium dioxide nanocrystal arrays via post-growth annealing for stable and energy-efficient switches
AU - Kapoguzov, K. E.
AU - Mutilin, S. V.
AU - Lysenko, N. I.
AU - Kichay, V. N.
AU - Yakovkina, L. V.
AU - Voloshin, B. V.
AU - Seleznev, V. A.
N1 - Сведения о финансировании Russian Academy of Sciences Ministry of Education and Science of the Russian Federation Russian Science Foundation 21-19-00873
PY - 2025/2
Y1 - 2025/2
N2 - The abrupt and reversible semiconductor-metal phase transition in vanadium dioxide nanocrystals has attracted considerable attention for potential applications in oxide electronics, including neuromorphic systems. This study presents a systematic investigation of post-growth annealing conditions for the formation of single VO2 M-phase nanocrystals arrays from VOx films synthesized by atomic layer deposition. The composition of the initial VOx films and the annealing parameters were found to significantly affect the morphology, phase composition and electrical properties of the obtained single nanocrystal arrays. Our results demonstrate that the formation of VO2 M-phase nanocrystal arrays occurs at annealing temperatures of 650 °C and above, irrespective of the initial film composition. More homogeneous in size nanocrystals are formed from initial VOx films with higher V+4 content. The structures with the initial V+4 content of 60 % annealed at 650 °C for 2 h demonstrates the resistive switching with an energy less than 150 fJ, and a total number of stable switching cycles more than 101⁰. Our results pave the way for the novel energy-efficient nanoelectronic and nanophotonic devices based on VO₂ nanoparticles.
AB - The abrupt and reversible semiconductor-metal phase transition in vanadium dioxide nanocrystals has attracted considerable attention for potential applications in oxide electronics, including neuromorphic systems. This study presents a systematic investigation of post-growth annealing conditions for the formation of single VO2 M-phase nanocrystals arrays from VOx films synthesized by atomic layer deposition. The composition of the initial VOx films and the annealing parameters were found to significantly affect the morphology, phase composition and electrical properties of the obtained single nanocrystal arrays. Our results demonstrate that the formation of VO2 M-phase nanocrystal arrays occurs at annealing temperatures of 650 °C and above, irrespective of the initial film composition. More homogeneous in size nanocrystals are formed from initial VOx films with higher V+4 content. The structures with the initial V+4 content of 60 % annealed at 650 °C for 2 h demonstrates the resistive switching with an energy less than 150 fJ, and a total number of stable switching cycles more than 101⁰. Our results pave the way for the novel energy-efficient nanoelectronic and nanophotonic devices based on VO₂ nanoparticles.
KW - Atomic-layer deposition
KW - Nanocrystals
KW - Post-growth annealing
KW - Resistive switching
KW - Semiconductor-to-metal phase transition
KW - Vanadium dioxide
UR - https://www.mendeley.com/catalogue/7ea42b0b-f425-3a01-92bd-843043ce11b9/
UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85210127169&origin=inward&txGid=b7baec1f13333b4fd71e51e23d70dde9
U2 - 10.1016/j.physe.2024.116165
DO - 10.1016/j.physe.2024.116165
M3 - Article
VL - 167
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
M1 - 116165
ER -
ID: 62799418