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Formation of light-emitting defects in silicon by swift heavy ion irradiation and subsequent annealing. / Cherkova, S. G.; Volodin, V. A.; Skuratov, V. A. и др.

в: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Том 535, 02.2023, стр. 132-136.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Cherkova, SG, Volodin, VA, Skuratov, VA, Stoffel, M, Rinnert, H & Vergnat, M 2023, 'Formation of light-emitting defects in silicon by swift heavy ion irradiation and subsequent annealing', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Том. 535, стр. 132-136. https://doi.org/10.1016/j.nimb.2022.12.004

APA

Cherkova, S. G., Volodin, V. A., Skuratov, V. A., Stoffel, M., Rinnert, H., & Vergnat, M. (2023). Formation of light-emitting defects in silicon by swift heavy ion irradiation and subsequent annealing. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 535, 132-136. https://doi.org/10.1016/j.nimb.2022.12.004

Vancouver

Cherkova SG, Volodin VA, Skuratov VA, Stoffel M, Rinnert H, Vergnat M. Formation of light-emitting defects in silicon by swift heavy ion irradiation and subsequent annealing. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2023 февр.;535:132-136. doi: 10.1016/j.nimb.2022.12.004

Author

Cherkova, S. G. ; Volodin, V. A. ; Skuratov, V. A. и др. / Formation of light-emitting defects in silicon by swift heavy ion irradiation and subsequent annealing. в: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2023 ; Том 535. стр. 132-136.

BibTeX

@article{4e1845a4a4a94e0a972f45012d70ddd9,
title = "Formation of light-emitting defects in silicon by swift heavy ion irradiation and subsequent annealing",
abstract = "High-resistivity floating-zone silicon (FZ-Si) and n-type (4.5 Ohm·cm) Czochralski silicon (CZ-Si) wafers were irradiated at room temperature with 167 MeV Xe ions to fluences ranging from 5·1010 to 5·1011 cm−2. Temperature dependent photoluminescence (PL) measurements were performed to characterize the as-implanted and annealed silicon wafers. It was found that irradiation with swift heavy ions (SHI) leads to the formation of light-emitting defects in both types of silicon wafers. Low-temperature annealing (400 °C) leads to a significant increase of the photoluminescence intensity. In addition, the photoluminescence decreases for increasing measurement temperatures and eventually quenching is observed for temperatures larger than 80 K. The type of silicon wafer (FZ or CZ) does not significantly influence the defect-related light-emitting properties. This implies that low fluence SHI irradiation is a promising method for creation of light-emitting defects in silicon.",
keywords = "Defects in silicon, Photoluminescence, Silicon, Swift heavy ions",
author = "Cherkova, {S. G.} and Volodin, {V. A.} and Skuratov, {V. A.} and M. Stoffel and H. Rinnert and M. Vergnat",
note = "The study was supported by the Ministry of Science and Higher Education of the Russian Federation, project No. FWGW-2022-0011.",
year = "2023",
month = feb,
doi = "10.1016/j.nimb.2022.12.004",
language = "English",
volume = "535",
pages = "132--136",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Formation of light-emitting defects in silicon by swift heavy ion irradiation and subsequent annealing

AU - Cherkova, S. G.

AU - Volodin, V. A.

AU - Skuratov, V. A.

AU - Stoffel, M.

AU - Rinnert, H.

AU - Vergnat, M.

N1 - The study was supported by the Ministry of Science and Higher Education of the Russian Federation, project No. FWGW-2022-0011.

PY - 2023/2

Y1 - 2023/2

N2 - High-resistivity floating-zone silicon (FZ-Si) and n-type (4.5 Ohm·cm) Czochralski silicon (CZ-Si) wafers were irradiated at room temperature with 167 MeV Xe ions to fluences ranging from 5·1010 to 5·1011 cm−2. Temperature dependent photoluminescence (PL) measurements were performed to characterize the as-implanted and annealed silicon wafers. It was found that irradiation with swift heavy ions (SHI) leads to the formation of light-emitting defects in both types of silicon wafers. Low-temperature annealing (400 °C) leads to a significant increase of the photoluminescence intensity. In addition, the photoluminescence decreases for increasing measurement temperatures and eventually quenching is observed for temperatures larger than 80 K. The type of silicon wafer (FZ or CZ) does not significantly influence the defect-related light-emitting properties. This implies that low fluence SHI irradiation is a promising method for creation of light-emitting defects in silicon.

AB - High-resistivity floating-zone silicon (FZ-Si) and n-type (4.5 Ohm·cm) Czochralski silicon (CZ-Si) wafers were irradiated at room temperature with 167 MeV Xe ions to fluences ranging from 5·1010 to 5·1011 cm−2. Temperature dependent photoluminescence (PL) measurements were performed to characterize the as-implanted and annealed silicon wafers. It was found that irradiation with swift heavy ions (SHI) leads to the formation of light-emitting defects in both types of silicon wafers. Low-temperature annealing (400 °C) leads to a significant increase of the photoluminescence intensity. In addition, the photoluminescence decreases for increasing measurement temperatures and eventually quenching is observed for temperatures larger than 80 K. The type of silicon wafer (FZ or CZ) does not significantly influence the defect-related light-emitting properties. This implies that low fluence SHI irradiation is a promising method for creation of light-emitting defects in silicon.

KW - Defects in silicon

KW - Photoluminescence

KW - Silicon

KW - Swift heavy ions

UR - https://www.scopus.com/inward/record.url?eid=2-s2.0-85144284747&partnerID=40&md5=ad942002e542a6581ab2bb61d2eca5fd

UR - https://www.mendeley.com/catalogue/672db579-92ab-3a79-8ca2-24194bf41ff5/

U2 - 10.1016/j.nimb.2022.12.004

DO - 10.1016/j.nimb.2022.12.004

M3 - Article

VL - 535

SP - 132

EP - 136

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

ER -

ID: 49729864