Standard
Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions. / Alperovich, V. L.; Akhundov, I. O.; Kazantsev, D. M. и др.
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. ред. / AV Latyshev; AV Dvurechenskii; AL Aseev. Elsevier Science Publishing Company, Inc., 2017. стр. 255-277 (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).
Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › глава/раздел › научная › Рецензирование
Harvard
Alperovich, VL, Akhundov, IO
, Kazantsev, DM, Rudaya, NS
, Rodyakina, EE, Kozhukhov, AS, Sheglov, DV, Karpov, AN, Shwartz, NL, Terekhov, AS
& Latyshev, AV 2017,
Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions. в AV Latyshev, AV Dvurechenskii & AL Aseev (ред.),
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications, Elsevier Science Publishing Company, Inc., стр. 255-277.
https://doi.org/10.1016/B978-0-12-810512-2.00010-X
APA
Alperovich, V. L., Akhundov, I. O.
, Kazantsev, D. M., Rudaya, N. S.
, Rodyakina, E. E., Kozhukhov, A. S., Sheglov, D. V., Karpov, A. N., Shwartz, N. L., Terekhov, A. S.
, & Latyshev, A. V. (2017).
Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions. в AV. Latyshev, AV. Dvurechenskii, & AL. Aseev (Ред.),
Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications (стр. 255-277). (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications). Elsevier Science Publishing Company, Inc..
https://doi.org/10.1016/B978-0-12-810512-2.00010-X
Vancouver
Alperovich VL, Akhundov IO
, Kazantsev DM, Rudaya NS
, Rodyakina EE, Kozhukhov AS и др.
Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions. в Latyshev AV, Dvurechenskii AV, Aseev AL, Редакторы, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Elsevier Science Publishing Company, Inc. 2017. стр. 255-277. (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications). doi: 10.1016/B978-0-12-810512-2.00010-X
Author
Alperovich, V. L. ; Akhundov, I. O.
; Kazantsev, D. M. и др. /
Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions. Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications: Growth, Characterization, Properties and Applications. Редактор / AV Latyshev ; AV Dvurechenskii ; AL Aseev. Elsevier Science Publishing Company, Inc., 2017. стр. 255-277 (Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications).
BibTeX
@inbook{a52d37b51df84674b13b9b9eed8361bf,
title = "Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions",
abstract = "{"}Step-and-terrace{"} surface morphology, with regular arrays of atomically flat terraces separated by monatomic steps was obtained by annealing GaAs(001) substrates in conditions close to equilibrium. The closeness of annealing conditions to equilibrium was determined by experiments on samples with lithographic marks. The annealing kinetics are characterized by full-length monatomic steps, and also by Fourier and autocorrelation analyses. A comparison of the experiment with Monte Carlo simulation enabled us to elucidate the main stages and microscopic mechanisms of the step-terraced morphology formation, and to evaluate the effective parameters which determined this process. The formation of straight dislocation-induced steps of monatomic height were studied under thermo-mechanical stress relaxation in GaAs/AlGaAs heterostructures bonded to glass.",
keywords = "Annealing, Atomic steps, Dislocations, GaAs, Heterostructures, Monte Carlo simulation, Ostwald ripening, Step-terraced morphology, Stress relaxation, Surface smoothing, VICINAL SURFACES, RELAXATION, GAAS(001) SURFACE, ANISOTROPY, MISFIT DISLOCATIONS, FILMS, GROWTH, DIFFUSION, MONTE-CARLO-SIMULATION, MORPHOLOGY",
author = "Alperovich, {V. L.} and Akhundov, {I. O.} and Kazantsev, {D. M.} and Rudaya, {N. S.} and Rodyakina, {E. E.} and Kozhukhov, {A. S.} and Sheglov, {D. V.} and Karpov, {A. N.} and Shwartz, {N. L.} and Terekhov, {A. S.} and Latyshev, {Alexander V.}",
note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Inc. All rights reserved.",
year = "2017",
month = jan,
day = "1",
doi = "10.1016/B978-0-12-810512-2.00010-X",
language = "English",
isbn = "9780128105122",
series = "Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications",
publisher = "Elsevier Science Publishing Company, Inc.",
pages = "255--277",
editor = "AV Latyshev and AV Dvurechenskii and AL Aseev",
booktitle = "Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications",
address = "Netherlands",
}
RIS
TY - CHAP
T1 - Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions
AU - Alperovich, V. L.
AU - Akhundov, I. O.
AU - Kazantsev, D. M.
AU - Rudaya, N. S.
AU - Rodyakina, E. E.
AU - Kozhukhov, A. S.
AU - Sheglov, D. V.
AU - Karpov, A. N.
AU - Shwartz, N. L.
AU - Terekhov, A. S.
AU - Latyshev, Alexander V.
N1 - Publisher Copyright:
© 2017 Elsevier Inc. All rights reserved.
PY - 2017/1/1
Y1 - 2017/1/1
N2 - "Step-and-terrace" surface morphology, with regular arrays of atomically flat terraces separated by monatomic steps was obtained by annealing GaAs(001) substrates in conditions close to equilibrium. The closeness of annealing conditions to equilibrium was determined by experiments on samples with lithographic marks. The annealing kinetics are characterized by full-length monatomic steps, and also by Fourier and autocorrelation analyses. A comparison of the experiment with Monte Carlo simulation enabled us to elucidate the main stages and microscopic mechanisms of the step-terraced morphology formation, and to evaluate the effective parameters which determined this process. The formation of straight dislocation-induced steps of monatomic height were studied under thermo-mechanical stress relaxation in GaAs/AlGaAs heterostructures bonded to glass.
AB - "Step-and-terrace" surface morphology, with regular arrays of atomically flat terraces separated by monatomic steps was obtained by annealing GaAs(001) substrates in conditions close to equilibrium. The closeness of annealing conditions to equilibrium was determined by experiments on samples with lithographic marks. The annealing kinetics are characterized by full-length monatomic steps, and also by Fourier and autocorrelation analyses. A comparison of the experiment with Monte Carlo simulation enabled us to elucidate the main stages and microscopic mechanisms of the step-terraced morphology formation, and to evaluate the effective parameters which determined this process. The formation of straight dislocation-induced steps of monatomic height were studied under thermo-mechanical stress relaxation in GaAs/AlGaAs heterostructures bonded to glass.
KW - Annealing
KW - Atomic steps
KW - Dislocations
KW - GaAs
KW - Heterostructures
KW - Monte Carlo simulation
KW - Ostwald ripening
KW - Step-terraced morphology
KW - Stress relaxation
KW - Surface smoothing
KW - VICINAL SURFACES
KW - RELAXATION
KW - GAAS(001) SURFACE
KW - ANISOTROPY
KW - MISFIT DISLOCATIONS
KW - FILMS
KW - GROWTH
KW - DIFFUSION
KW - MONTE-CARLO-SIMULATION
KW - MORPHOLOGY
UR - http://www.scopus.com/inward/record.url?scp=85022179917&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/afd52178-a020-36d5-9110-43761e674110/
U2 - 10.1016/B978-0-12-810512-2.00010-X
DO - 10.1016/B978-0-12-810512-2.00010-X
M3 - Chapter
SN - 9780128105122
T3 - Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications
SP - 255
EP - 277
BT - Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications
A2 - Latyshev, AV
A2 - Dvurechenskii, AV
A2 - Aseev, AL
PB - Elsevier Science Publishing Company, Inc.
ER -
