Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions

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Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions. / Alperovich, V. L.; Akhundov, I. O.; Kazantsev, D. M. и др.

Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. ред. / AV Latyshev; AV Dvurechenskii; AL Aseev. Elsevier Science Inc., 2017. стр. 255-277.

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › глава/раздел › научная › Рецензирование

Harvard

Alperovich, VL, Akhundov, IO, Kazantsev, DM, Rudaya, NS, Rodyakina, EE, Kozhukhov, AS, Sheglov, DV, Karpov, AN, Shwartz, NL, Terekhov, AS & Latyshev, AV 2017, Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions. в AV Latyshev, AV Dvurechenskii & AL Aseev (ред.), Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Inc., стр. 255-277. https://doi.org/10.1016/B978-0-12-810512-2.00010-X

APA

Alperovich, V. L., Akhundov, I. O., Kazantsev, D. M., Rudaya, N. S., Rodyakina, E. E., Kozhukhov, A. S., Sheglov, D. V., Karpov, A. N., Shwartz, N. L., Terekhov, A. S., & Latyshev, A. V. (2017). Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions. в AV. Latyshev, AV. Dvurechenskii, & AL. Aseev (Ред.), Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications (стр. 255-277). Elsevier Science Inc.. https://doi.org/10.1016/B978-0-12-810512-2.00010-X

Vancouver

Alperovich VL, Akhundov IO, Kazantsev DM, Rudaya NS, Rodyakina EE, Kozhukhov AS и др. Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions. в Latyshev AV, Dvurechenskii AV, Aseev AL, Редакторы, Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Elsevier Science Inc. 2017. стр. 255-277 doi: 10.1016/B978-0-12-810512-2.00010-X

Author

Alperovich, V. L. ; Akhundov, I. O. ; Kazantsev, D. M. и др. / Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions. Advances in Semiconductor Nanostructures: Growth, Characterization, Properties and Applications. Редактор / AV Latyshev ; AV Dvurechenskii ; AL Aseev. Elsevier Science Inc., 2017. стр. 255-277

BibTeX

@inbook{a52d37b51df84674b13b9b9eed8361bf,

title = "Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions",

abstract = "{"}Step-and-terrace{"} surface morphology, with regular arrays of atomically flat terraces separated by monatomic steps was obtained by annealing GaAs(001) substrates in conditions close to equilibrium. The closeness of annealing conditions to equilibrium was determined by experiments on samples with lithographic marks. The annealing kinetics are characterized by full-length monatomic steps, and also by Fourier and autocorrelation analyses. A comparison of the experiment with Monte Carlo simulation enabled us to elucidate the main stages and microscopic mechanisms of the step-terraced morphology formation, and to evaluate the effective parameters which determined this process. The formation of straight dislocation-induced steps of monatomic height were studied under thermo-mechanical stress relaxation in GaAs/AlGaAs heterostructures bonded to glass.",

keywords = "Annealing, Atomic steps, Dislocations, GaAs, Heterostructures, Monte Carlo simulation, Ostwald ripening, Step-terraced morphology, Stress relaxation, Surface smoothing, VICINAL SURFACES, RELAXATION, GAAS(001) SURFACE, ANISOTROPY, MISFIT DISLOCATIONS, FILMS, GROWTH, DIFFUSION, MONTE-CARLO-SIMULATION, MORPHOLOGY",

author = "Alperovich, {V. L.} and Akhundov, {I. O.} and Kazantsev, {D. M.} and Rudaya, {N. S.} and Rodyakina, {E. E.} and Kozhukhov, {A. S.} and Sheglov, {D. V.} and Karpov, {A. N.} and Shwartz, {N. L.} and Terekhov, {A. S.} and Latyshev, {Alexander V.}",

year = "2017",

month = jan,

day = "1",

doi = "10.1016/B978-0-12-810512-2.00010-X",

language = "English",

isbn = "9780128105122",

pages = "255--277",

editor = "AV Latyshev and AV Dvurechenskii and AL Aseev",

booktitle = "Advances in Semiconductor Nanostructures",

publisher = "Elsevier Science Inc.",

address = "United States",

}

RIS

TY - CHAP

T1 - Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions

AU - Alperovich, V. L.

AU - Akhundov, I. O.

AU - Kazantsev, D. M.

AU - Rudaya, N. S.

AU - Rodyakina, E. E.

AU - Kozhukhov, A. S.

AU - Sheglov, D. V.

AU - Karpov, A. N.

AU - Shwartz, N. L.

AU - Terekhov, A. S.

AU - Latyshev, Alexander V.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - "Step-and-terrace" surface morphology, with regular arrays of atomically flat terraces separated by monatomic steps was obtained by annealing GaAs(001) substrates in conditions close to equilibrium. The closeness of annealing conditions to equilibrium was determined by experiments on samples with lithographic marks. The annealing kinetics are characterized by full-length monatomic steps, and also by Fourier and autocorrelation analyses. A comparison of the experiment with Monte Carlo simulation enabled us to elucidate the main stages and microscopic mechanisms of the step-terraced morphology formation, and to evaluate the effective parameters which determined this process. The formation of straight dislocation-induced steps of monatomic height were studied under thermo-mechanical stress relaxation in GaAs/AlGaAs heterostructures bonded to glass.

AB - "Step-and-terrace" surface morphology, with regular arrays of atomically flat terraces separated by monatomic steps was obtained by annealing GaAs(001) substrates in conditions close to equilibrium. The closeness of annealing conditions to equilibrium was determined by experiments on samples with lithographic marks. The annealing kinetics are characterized by full-length monatomic steps, and also by Fourier and autocorrelation analyses. A comparison of the experiment with Monte Carlo simulation enabled us to elucidate the main stages and microscopic mechanisms of the step-terraced morphology formation, and to evaluate the effective parameters which determined this process. The formation of straight dislocation-induced steps of monatomic height were studied under thermo-mechanical stress relaxation in GaAs/AlGaAs heterostructures bonded to glass.

KW - Annealing

KW - Atomic steps

KW - Dislocations

KW - GaAs

KW - Heterostructures

KW - Monte Carlo simulation

KW - Ostwald ripening

KW - Step-terraced morphology

KW - Stress relaxation

KW - Surface smoothing

KW - VICINAL SURFACES

KW - RELAXATION

KW - GAAS(001) SURFACE

KW - ANISOTROPY

KW - MISFIT DISLOCATIONS

KW - FILMS

KW - GROWTH

KW - DIFFUSION

KW - MONTE-CARLO-SIMULATION

KW - MORPHOLOGY

UR - http://www.scopus.com/inward/record.url?scp=85022179917&partnerID=8YFLogxK

U2 - 10.1016/B978-0-12-810512-2.00010-X

DO - 10.1016/B978-0-12-810512-2.00010-X

M3 - Chapter

SN - 9780128105122

SP - 255

EP - 277

BT - Advances in Semiconductor Nanostructures

A2 - Latyshev, AV

A2 - Dvurechenskii, AV

A2 - Aseev, AL

PB - Elsevier Science Inc.

ER -

ID: 21753631