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Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices : Experiment and Calculations. / Volodin, V. A.; Sachkov, V. A.; Sinyukov, M. P.

в: Semiconductors, Том 52, № 6, 01.06.2018, стр. 717-722.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

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Volodin VA, Sachkov VA, Sinyukov MP. Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices: Experiment and Calculations. Semiconductors. 2018 июнь 1;52(6):717-722. doi: 10.1134/S1063782618060234

Author

Volodin, V. A. ; Sachkov, V. A. ; Sinyukov, M. P. / Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices : Experiment and Calculations. в: Semiconductors. 2018 ; Том 52, № 6. стр. 717-722.

BibTeX

@article{3a5432ecf7d34c21a23300358351ca11,
title = "Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices: Experiment and Calculations",
abstract = "The Raman spectra of GaAs/AlAs(100) superlattices are calculated and studied experimentally for various wave-vector directions. The experiments are performed when applying a confocal optical microscope combined with a micro-Raman spectrometer for various scattering geometries both for phonons with a wave vector directed along the normal to a superlattice and in the in-plane geometry. The frequencies and eigenvectors of phonons are calculated in the extended Born model approximation taking into account Coulomb interaction in the rigid-ion approximation. The Raman spectra are calculated in the scope of the deformation- potential mechanism; herewith, it turns out that additional peaks, which are not described in the scope of this approach, appear in the experimental spectra. It seems likely that these peaks appear due to the manifestation of Raman scattering forbidden by selection rules under resonance conditions. An attempt is made to explain the appearance of these peaks in the experimental spectra within the scope of inelastic phonon scattering at bound charges (phonons with a large dipole moment).",
author = "Volodin, {V. A.} and Sachkov, {V. A.} and Sinyukov, {M. P.}",
note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",
year = "2018",
month = jun,
day = "1",
doi = "10.1134/S1063782618060234",
language = "English",
volume = "52",
pages = "717--722",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "6",

}

RIS

TY - JOUR

T1 - Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices

T2 - Experiment and Calculations

AU - Volodin, V. A.

AU - Sachkov, V. A.

AU - Sinyukov, M. P.

N1 - Publisher Copyright: © 2018, Pleiades Publishing, Ltd.

PY - 2018/6/1

Y1 - 2018/6/1

N2 - The Raman spectra of GaAs/AlAs(100) superlattices are calculated and studied experimentally for various wave-vector directions. The experiments are performed when applying a confocal optical microscope combined with a micro-Raman spectrometer for various scattering geometries both for phonons with a wave vector directed along the normal to a superlattice and in the in-plane geometry. The frequencies and eigenvectors of phonons are calculated in the extended Born model approximation taking into account Coulomb interaction in the rigid-ion approximation. The Raman spectra are calculated in the scope of the deformation- potential mechanism; herewith, it turns out that additional peaks, which are not described in the scope of this approach, appear in the experimental spectra. It seems likely that these peaks appear due to the manifestation of Raman scattering forbidden by selection rules under resonance conditions. An attempt is made to explain the appearance of these peaks in the experimental spectra within the scope of inelastic phonon scattering at bound charges (phonons with a large dipole moment).

AB - The Raman spectra of GaAs/AlAs(100) superlattices are calculated and studied experimentally for various wave-vector directions. The experiments are performed when applying a confocal optical microscope combined with a micro-Raman spectrometer for various scattering geometries both for phonons with a wave vector directed along the normal to a superlattice and in the in-plane geometry. The frequencies and eigenvectors of phonons are calculated in the extended Born model approximation taking into account Coulomb interaction in the rigid-ion approximation. The Raman spectra are calculated in the scope of the deformation- potential mechanism; herewith, it turns out that additional peaks, which are not described in the scope of this approach, appear in the experimental spectra. It seems likely that these peaks appear due to the manifestation of Raman scattering forbidden by selection rules under resonance conditions. An attempt is made to explain the appearance of these peaks in the experimental spectra within the scope of inelastic phonon scattering at bound charges (phonons with a large dipole moment).

UR - http://www.scopus.com/inward/record.url?scp=85047208835&partnerID=8YFLogxK

U2 - 10.1134/S1063782618060234

DO - 10.1134/S1063782618060234

M3 - Article

AN - SCOPUS:85047208835

VL - 52

SP - 717

EP - 722

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 6

ER -

ID: 13488248