Standard

Films of (Gd1 –xTb x)2O2S Solid Solutions Produced by Oxide Sulfidation in NH4SCN Vapor and Their Optical Properties. / Belaya, S. V.; Bakovets, V. V.; Rakhmanova, M. I. и др.

в: Inorganic Materials, Том 56, № 8, 01.08.2020, стр. 836-846.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Belaya, SV, Bakovets, VV, Rakhmanova, MI, Maksimovskii, EA, Yushina, IV, Shayapov, VR & Korolkov, IV 2020, 'Films of (Gd1 –xTb x)2O2S Solid Solutions Produced by Oxide Sulfidation in NH4SCN Vapor and Their Optical Properties', Inorganic Materials, Том. 56, № 8, стр. 836-846. https://doi.org/10.1134/S0020168520080038

APA

Belaya, S. V., Bakovets, V. V., Rakhmanova, M. I., Maksimovskii, E. A., Yushina, I. V., Shayapov, V. R., & Korolkov, I. V. (2020). Films of (Gd1 –xTb x)2O2S Solid Solutions Produced by Oxide Sulfidation in NH4SCN Vapor and Their Optical Properties. Inorganic Materials, 56(8), 836-846. https://doi.org/10.1134/S0020168520080038

Vancouver

Belaya SV, Bakovets VV, Rakhmanova MI, Maksimovskii EA, Yushina IV, Shayapov VR и др. Films of (Gd1 –xTb x)2O2S Solid Solutions Produced by Oxide Sulfidation in NH4SCN Vapor and Their Optical Properties. Inorganic Materials. 2020 авг. 1;56(8):836-846. doi: 10.1134/S0020168520080038

Author

Belaya, S. V. ; Bakovets, V. V. ; Rakhmanova, M. I. и др. / Films of (Gd1 –xTb x)2O2S Solid Solutions Produced by Oxide Sulfidation in NH4SCN Vapor and Their Optical Properties. в: Inorganic Materials. 2020 ; Том 56, № 8. стр. 836-846.

BibTeX

@article{e7d0ec57c0e44f75b5c3dbd5b94caf6b,
title = "Films of (Gd1 –xTb x)2O2S Solid Solutions Produced by Oxide Sulfidation in NH4SCN Vapor and Their Optical Properties",
abstract = "(Gd1– xTbx)2O3 (x = 0.04–0.22) films 115 to 150 nm in thickness have been grown on Si and SiO2 substrates by metal organic chemical vapor deposition (MOCVD) using Ln(dpm)3 precursors. After annealing in air at 800°C for removing carbon-containing impurities, the films were sulfided in NH4SCN vapor at temperatures from 700 to 1000°C in an Ar atmosphere until the formation of (Gd1 –xTbx)2O2S oxysulfides. The surface of the films is formed by grains 60 to 200 nm in size. The measured refractive index of the films is 2.2–2.4 and their estimated optical band gap (Eg) is 4.7–5.0 eV. The optical transmission of the films in the visible spectral region (400–750 nm) reaches 78–84%. The highest photoluminescence (PL) intensity in the oxysulfide films produced under identical conditions has been observed at x = 0.05. The blue component of their PL decreases with increasing terbium content and the emission shifts to the green spectral region.",
keywords = "gadolinium oxysulfide, oxide sulfidation, photoluminescence, solid solutions, terbium oxysulfide, thin films, LUMINESCENCE EFFICIENCY, MECHANISM, GD2O2S-TB PHOSPHOR, PHOTOLUMINESCENCE PROPERTIES, KINETICS, GROWTH, FABRICATION, EMISSION, GD",
author = "Belaya, {S. V.} and Bakovets, {V. V.} and Rakhmanova, {M. I.} and Maksimovskii, {E. A.} and Yushina, {I. V.} and Shayapov, {V. R.} and Korolkov, {I. V.}",
year = "2020",
month = aug,
day = "1",
doi = "10.1134/S0020168520080038",
language = "English",
volume = "56",
pages = "836--846",
journal = "Inorganic Materials",
issn = "0020-1685",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "8",

}

RIS

TY - JOUR

T1 - Films of (Gd1 –xTb x)2O2S Solid Solutions Produced by Oxide Sulfidation in NH4SCN Vapor and Their Optical Properties

AU - Belaya, S. V.

AU - Bakovets, V. V.

AU - Rakhmanova, M. I.

AU - Maksimovskii, E. A.

AU - Yushina, I. V.

AU - Shayapov, V. R.

AU - Korolkov, I. V.

PY - 2020/8/1

Y1 - 2020/8/1

N2 - (Gd1– xTbx)2O3 (x = 0.04–0.22) films 115 to 150 nm in thickness have been grown on Si and SiO2 substrates by metal organic chemical vapor deposition (MOCVD) using Ln(dpm)3 precursors. After annealing in air at 800°C for removing carbon-containing impurities, the films were sulfided in NH4SCN vapor at temperatures from 700 to 1000°C in an Ar atmosphere until the formation of (Gd1 –xTbx)2O2S oxysulfides. The surface of the films is formed by grains 60 to 200 nm in size. The measured refractive index of the films is 2.2–2.4 and their estimated optical band gap (Eg) is 4.7–5.0 eV. The optical transmission of the films in the visible spectral region (400–750 nm) reaches 78–84%. The highest photoluminescence (PL) intensity in the oxysulfide films produced under identical conditions has been observed at x = 0.05. The blue component of their PL decreases with increasing terbium content and the emission shifts to the green spectral region.

AB - (Gd1– xTbx)2O3 (x = 0.04–0.22) films 115 to 150 nm in thickness have been grown on Si and SiO2 substrates by metal organic chemical vapor deposition (MOCVD) using Ln(dpm)3 precursors. After annealing in air at 800°C for removing carbon-containing impurities, the films were sulfided in NH4SCN vapor at temperatures from 700 to 1000°C in an Ar atmosphere until the formation of (Gd1 –xTbx)2O2S oxysulfides. The surface of the films is formed by grains 60 to 200 nm in size. The measured refractive index of the films is 2.2–2.4 and their estimated optical band gap (Eg) is 4.7–5.0 eV. The optical transmission of the films in the visible spectral region (400–750 nm) reaches 78–84%. The highest photoluminescence (PL) intensity in the oxysulfide films produced under identical conditions has been observed at x = 0.05. The blue component of their PL decreases with increasing terbium content and the emission shifts to the green spectral region.

KW - gadolinium oxysulfide

KW - oxide sulfidation

KW - photoluminescence

KW - solid solutions

KW - terbium oxysulfide

KW - thin films

KW - LUMINESCENCE EFFICIENCY

KW - MECHANISM

KW - GD2O2S-TB PHOSPHOR

KW - PHOTOLUMINESCENCE PROPERTIES

KW - KINETICS

KW - GROWTH

KW - FABRICATION

KW - EMISSION

KW - GD

UR - http://www.scopus.com/inward/record.url?scp=85089971521&partnerID=8YFLogxK

U2 - 10.1134/S0020168520080038

DO - 10.1134/S0020168520080038

M3 - Article

AN - SCOPUS:85089971521

VL - 56

SP - 836

EP - 846

JO - Inorganic Materials

JF - Inorganic Materials

SN - 0020-1685

IS - 8

ER -

ID: 25300289