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Features of Optical Gain in Heavily Doped Al xGa1 –xN:Si-Structures. / Bokhan, P. A.; Zhuravlev, K. S.; Zakrevsky, D. E. и др.

в: Technical Physics Letters, Том 47, № 9, 09.2021, стр. 692-695.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Bokhan, PA, Zhuravlev, KS, Zakrevsky, DE, Malin, TV, Osinnykh, IV & Fateev, NV 2021, 'Features of Optical Gain in Heavily Doped Al xGa1 –xN:Si-Structures', Technical Physics Letters, Том. 47, № 9, стр. 692-695. https://doi.org/10.1134/S1063785021070178

APA

Bokhan, P. A., Zhuravlev, K. S., Zakrevsky, D. E., Malin, T. V., Osinnykh, I. V., & Fateev, N. V. (2021). Features of Optical Gain in Heavily Doped Al xGa1 –xN:Si-Structures. Technical Physics Letters, 47(9), 692-695. https://doi.org/10.1134/S1063785021070178

Vancouver

Bokhan PA, Zhuravlev KS, Zakrevsky DE, Malin TV, Osinnykh IV, Fateev NV. Features of Optical Gain in Heavily Doped Al xGa1 –xN:Si-Structures. Technical Physics Letters. 2021 сент.;47(9):692-695. doi: 10.1134/S1063785021070178

Author

Bokhan, P. A. ; Zhuravlev, K. S. ; Zakrevsky, D. E. и др. / Features of Optical Gain in Heavily Doped Al xGa1 –xN:Si-Structures. в: Technical Physics Letters. 2021 ; Том 47, № 9. стр. 692-695.

BibTeX

@article{df460ebcb090423698ecda56fd47859e,
title = "Features of Optical Gain in Heavily Doped Al xGa1 –xN:Si-Structures",
abstract = "The temporal behavior of the luminescence and stimulated radiation intensities in the heavily doped structures Al0.65Ga0.35N and Al0.74Ga0.26N under pulsed optical excitation has been experimentally studied. The results have demonstrated that the temporal decay of the luminescence and stimulated radiation intensities for different wavelengths of the emitted spectrum and optical pumping intensities consists of at least two components: fast and slow. The fast components with the exponential time decay are associated with the radiative recombination of nonequilibrium electrons at deep acceptors and the slow ones are associated with the recombination of donor–acceptor pairs.",
keywords = "heavily doped AlGaN structures, luminescence, optical gain, stimulated emission, heavily doped AlxGa1 –xN structures",
author = "Bokhan, {P. A.} and Zhuravlev, {K. S.} and Zakrevsky, {D. E.} and Malin, {T. V.} and Osinnykh, {I. V.} and Fateev, {N. V.}",
note = "This work was carried out within the framework of a state order to the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences. Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",
year = "2021",
month = sep,
doi = "10.1134/S1063785021070178",
language = "English",
volume = "47",
pages = "692--695",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "PLEIADES PUBLISHING INC",
number = "9",

}

RIS

TY - JOUR

T1 - Features of Optical Gain in Heavily Doped Al xGa1 –xN:Si-Structures

AU - Bokhan, P. A.

AU - Zhuravlev, K. S.

AU - Zakrevsky, D. E.

AU - Malin, T. V.

AU - Osinnykh, I. V.

AU - Fateev, N. V.

N1 - This work was carried out within the framework of a state order to the Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences. Publisher Copyright: © 2021, Pleiades Publishing, Ltd.

PY - 2021/9

Y1 - 2021/9

N2 - The temporal behavior of the luminescence and stimulated radiation intensities in the heavily doped structures Al0.65Ga0.35N and Al0.74Ga0.26N under pulsed optical excitation has been experimentally studied. The results have demonstrated that the temporal decay of the luminescence and stimulated radiation intensities for different wavelengths of the emitted spectrum and optical pumping intensities consists of at least two components: fast and slow. The fast components with the exponential time decay are associated with the radiative recombination of nonequilibrium electrons at deep acceptors and the slow ones are associated with the recombination of donor–acceptor pairs.

AB - The temporal behavior of the luminescence and stimulated radiation intensities in the heavily doped structures Al0.65Ga0.35N and Al0.74Ga0.26N under pulsed optical excitation has been experimentally studied. The results have demonstrated that the temporal decay of the luminescence and stimulated radiation intensities for different wavelengths of the emitted spectrum and optical pumping intensities consists of at least two components: fast and slow. The fast components with the exponential time decay are associated with the radiative recombination of nonequilibrium electrons at deep acceptors and the slow ones are associated with the recombination of donor–acceptor pairs.

KW - heavily doped AlGaN structures

KW - luminescence

KW - optical gain

KW - stimulated emission

KW - heavily doped AlxGa1 –xN structures

UR - http://www.scopus.com/inward/record.url?scp=85121490927&partnerID=8YFLogxK

UR - https://www.elibrary.ru/item.asp?id=47545081

UR - https://www.mendeley.com/catalogue/03b29fc4-e202-37ae-a3ba-a8c1c3932243/

U2 - 10.1134/S1063785021070178

DO - 10.1134/S1063785021070178

M3 - Article

AN - SCOPUS:85121490927

VL - 47

SP - 692

EP - 695

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 9

ER -

ID: 35228630