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Express Characterization of Crystalline Perfection of CdxHg1−xTe Structures by Reflection Second Harmonic Generation of Probing Radiation. / Stupak, M. F.; Mikhailov, N. N.; Dvoretsky, S. A. и др.

в: Optoelectronics, Instrumentation and Data Processing, Том 55, № 5, 01.09.2019, стр. 447-454.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Stupak, MF, Mikhailov, NN, Dvoretsky, SA & Yakushev, MV 2019, 'Express Characterization of Crystalline Perfection of CdxHg1−xTe Structures by Reflection Second Harmonic Generation of Probing Radiation', Optoelectronics, Instrumentation and Data Processing, Том. 55, № 5, стр. 447-454. https://doi.org/10.3103/S8756699019050054

APA

Stupak, M. F., Mikhailov, N. N., Dvoretsky, S. A., & Yakushev, M. V. (2019). Express Characterization of Crystalline Perfection of CdxHg1−xTe Structures by Reflection Second Harmonic Generation of Probing Radiation. Optoelectronics, Instrumentation and Data Processing, 55(5), 447-454. https://doi.org/10.3103/S8756699019050054

Vancouver

Stupak MF, Mikhailov NN, Dvoretsky SA, Yakushev MV. Express Characterization of Crystalline Perfection of CdxHg1−xTe Structures by Reflection Second Harmonic Generation of Probing Radiation. Optoelectronics, Instrumentation and Data Processing. 2019 сент. 1;55(5):447-454. doi: 10.3103/S8756699019050054

Author

Stupak, M. F. ; Mikhailov, N. N. ; Dvoretsky, S. A. и др. / Express Characterization of Crystalline Perfection of CdxHg1−xTe Structures by Reflection Second Harmonic Generation of Probing Radiation. в: Optoelectronics, Instrumentation and Data Processing. 2019 ; Том 55, № 5. стр. 447-454.

BibTeX

@article{c420429c9458489f971186365af9b080,
title = "Express Characterization of Crystalline Perfection of CdxHg1−xTe Structures by Reflection Second Harmonic Generation of Probing Radiation",
abstract = "This paper presents the results of numerical simulation for 4 ¯ 3 m crystals and experimental results for azimuthal angular dependences of polarization components of a second harmonic signal reflected from GaAs(013) substrates, CdTe/ZnTe/GaAs buffer layers, and CdxHg1−xTe/CdTe/ZnTe/GaAs structures, sequentially grown on these substrates with normal incidence of probing laser radiation on the sample and azimuthal rotation of its polarization plane. It is revealed from investigating the GaAs(013) substrates and CdTe/ZnTe/GaAs buffer layers that deviations from the base cut (013) relative to angles θ and ϕ turn out to be 1–3° in the GaAs substrates and up to 8° in the CdTe/ZnTe/GaAs buffer layers. The observed asymmetry of the minima of angular experimental dependences of the second harmonic signal in the GaAs substrates is related to stresses. It is assumed on the basis of the experimental data that the values of the components of the nonlinear susceptibility tensor χxyz(ω) of the crystalline structure CdxHg1−xTe significantly exceed those of similar tensor components in CdTe and GaAs.",
keywords = "$\bar 43m$ crystals, azimuthal angular dependences, CdHgTe structures, GaAs substrates, second harmonic, (4)over-bar3m crystals, CdxHg1-xTe structures",
author = "Stupak, {M. F.} and Mikhailov, {N. N.} and Dvoretsky, {S. A.} and Yakushev, {M. V.}",
year = "2019",
month = sep,
day = "1",
doi = "10.3103/S8756699019050054",
language = "English",
volume = "55",
pages = "447--454",
journal = "Optoelectronics, Instrumentation and Data Processing",
issn = "8756-6990",
publisher = "Allerton Press Inc.",
number = "5",

}

RIS

TY - JOUR

T1 - Express Characterization of Crystalline Perfection of CdxHg1−xTe Structures by Reflection Second Harmonic Generation of Probing Radiation

AU - Stupak, M. F.

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

AU - Yakushev, M. V.

PY - 2019/9/1

Y1 - 2019/9/1

N2 - This paper presents the results of numerical simulation for 4 ¯ 3 m crystals and experimental results for azimuthal angular dependences of polarization components of a second harmonic signal reflected from GaAs(013) substrates, CdTe/ZnTe/GaAs buffer layers, and CdxHg1−xTe/CdTe/ZnTe/GaAs structures, sequentially grown on these substrates with normal incidence of probing laser radiation on the sample and azimuthal rotation of its polarization plane. It is revealed from investigating the GaAs(013) substrates and CdTe/ZnTe/GaAs buffer layers that deviations from the base cut (013) relative to angles θ and ϕ turn out to be 1–3° in the GaAs substrates and up to 8° in the CdTe/ZnTe/GaAs buffer layers. The observed asymmetry of the minima of angular experimental dependences of the second harmonic signal in the GaAs substrates is related to stresses. It is assumed on the basis of the experimental data that the values of the components of the nonlinear susceptibility tensor χxyz(ω) of the crystalline structure CdxHg1−xTe significantly exceed those of similar tensor components in CdTe and GaAs.

AB - This paper presents the results of numerical simulation for 4 ¯ 3 m crystals and experimental results for azimuthal angular dependences of polarization components of a second harmonic signal reflected from GaAs(013) substrates, CdTe/ZnTe/GaAs buffer layers, and CdxHg1−xTe/CdTe/ZnTe/GaAs structures, sequentially grown on these substrates with normal incidence of probing laser radiation on the sample and azimuthal rotation of its polarization plane. It is revealed from investigating the GaAs(013) substrates and CdTe/ZnTe/GaAs buffer layers that deviations from the base cut (013) relative to angles θ and ϕ turn out to be 1–3° in the GaAs substrates and up to 8° in the CdTe/ZnTe/GaAs buffer layers. The observed asymmetry of the minima of angular experimental dependences of the second harmonic signal in the GaAs substrates is related to stresses. It is assumed on the basis of the experimental data that the values of the components of the nonlinear susceptibility tensor χxyz(ω) of the crystalline structure CdxHg1−xTe significantly exceed those of similar tensor components in CdTe and GaAs.

KW - $\bar 43m$ crystals

KW - azimuthal angular dependences

KW - CdHgTe structures

KW - GaAs substrates

KW - second harmonic

KW - (4)over-bar3m crystals

KW - CdxHg1-xTe structures

UR - http://www.scopus.com/inward/record.url?scp=85078334129&partnerID=8YFLogxK

U2 - 10.3103/S8756699019050054

DO - 10.3103/S8756699019050054

M3 - Article

AN - SCOPUS:85078334129

VL - 55

SP - 447

EP - 454

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 5

ER -

ID: 23259240