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Electronic structure and charge transport mechanism in a forming-free SiOx-based memristor. / Gismatulin, Andrei A.; Voronkovskii, Vitalii A.; Kamaev, Gennadiy N. и др.

в: Nanotechnology, Том 31, № 50, 505704, 11.12.2020.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Gismatulin, AA, Voronkovskii, VA, Kamaev, GN, Novikov, YN, Kruchinin, VN, Krivyakin, GK, Gritsenko, VA, Prosvirin, IP & Chin, A 2020, 'Electronic structure and charge transport mechanism in a forming-free SiOx-based memristor', Nanotechnology, Том. 31, № 50, 505704. https://doi.org/10.1088/1361-6528/abb505

APA

Gismatulin, A. A., Voronkovskii, V. A., Kamaev, G. N., Novikov, Y. N., Kruchinin, V. N., Krivyakin, G. K., Gritsenko, V. A., Prosvirin, I. P., & Chin, A. (2020). Electronic structure and charge transport mechanism in a forming-free SiOx-based memristor. Nanotechnology, 31(50), [505704]. https://doi.org/10.1088/1361-6528/abb505

Vancouver

Gismatulin AA, Voronkovskii VA, Kamaev GN, Novikov YN, Kruchinin VN, Krivyakin GK и др. Electronic structure and charge transport mechanism in a forming-free SiOx-based memristor. Nanotechnology. 2020 дек. 11;31(50):505704. doi: 10.1088/1361-6528/abb505

Author

Gismatulin, Andrei A. ; Voronkovskii, Vitalii A. ; Kamaev, Gennadiy N. и др. / Electronic structure and charge transport mechanism in a forming-free SiOx-based memristor. в: Nanotechnology. 2020 ; Том 31, № 50.

BibTeX

@article{c32d0823be7e40a2afd8c0e9a9edce82,
title = "Electronic structure and charge transport mechanism in a forming-free SiOx-based memristor",
abstract = "THe memristor is a key memory element for neuromorphic electronics and new generation flash memories. One of the most promising materials for memristor technology is silicon oxide SiOx, which is compatible with silicon-based technology. In this paper, the electronic structure and charge transport mechanism in a forming-free SiOx-based memristor fabricated with the plasma enhanced chemical vapor deposition method is investigated. The experimental current-voltage characteristics measured at different temperatures in high-resistance, low-resistance and intermediate states are compared with various charge transport theories. The charge transport in all states is limited by the space charge-limited current model. The trap parameters, responsible for the charge transport in a SiOx-based memristor in different states, are determined.",
keywords = "Charge transport mechanism, Electronic structure, Memristor, SiOx, PHOTOLUMINESCENCE, FIELD, DEVICE, RERAM, charge transport mechanism, SILICON-OXIDE, memristor, electronic structure, RESISTANCE, CONDUCTION",
author = "Gismatulin, {Andrei A.} and Voronkovskii, {Vitalii A.} and Kamaev, {Gennadiy N.} and Novikov, {Yuriy N.} and Kruchinin, {Vladimir N.} and Krivyakin, {Grigory K.} and Gritsenko, {Vladimir A.} and Prosvirin, {Igor P.} and Albert Chin",
year = "2020",
month = dec,
day = "11",
doi = "10.1088/1361-6528/abb505",
language = "English",
volume = "31",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "50",

}

RIS

TY - JOUR

T1 - Electronic structure and charge transport mechanism in a forming-free SiOx-based memristor

AU - Gismatulin, Andrei A.

AU - Voronkovskii, Vitalii A.

AU - Kamaev, Gennadiy N.

AU - Novikov, Yuriy N.

AU - Kruchinin, Vladimir N.

AU - Krivyakin, Grigory K.

AU - Gritsenko, Vladimir A.

AU - Prosvirin, Igor P.

AU - Chin, Albert

PY - 2020/12/11

Y1 - 2020/12/11

N2 - THe memristor is a key memory element for neuromorphic electronics and new generation flash memories. One of the most promising materials for memristor technology is silicon oxide SiOx, which is compatible with silicon-based technology. In this paper, the electronic structure and charge transport mechanism in a forming-free SiOx-based memristor fabricated with the plasma enhanced chemical vapor deposition method is investigated. The experimental current-voltage characteristics measured at different temperatures in high-resistance, low-resistance and intermediate states are compared with various charge transport theories. The charge transport in all states is limited by the space charge-limited current model. The trap parameters, responsible for the charge transport in a SiOx-based memristor in different states, are determined.

AB - THe memristor is a key memory element for neuromorphic electronics and new generation flash memories. One of the most promising materials for memristor technology is silicon oxide SiOx, which is compatible with silicon-based technology. In this paper, the electronic structure and charge transport mechanism in a forming-free SiOx-based memristor fabricated with the plasma enhanced chemical vapor deposition method is investigated. The experimental current-voltage characteristics measured at different temperatures in high-resistance, low-resistance and intermediate states are compared with various charge transport theories. The charge transport in all states is limited by the space charge-limited current model. The trap parameters, responsible for the charge transport in a SiOx-based memristor in different states, are determined.

KW - Charge transport mechanism

KW - Electronic structure

KW - Memristor

KW - SiOx

KW - PHOTOLUMINESCENCE

KW - FIELD

KW - DEVICE

KW - RERAM

KW - charge transport mechanism

KW - SILICON-OXIDE

KW - memristor

KW - electronic structure

KW - RESISTANCE

KW - CONDUCTION

UR - http://www.scopus.com/inward/record.url?scp=85092801616&partnerID=8YFLogxK

U2 - 10.1088/1361-6528/abb505

DO - 10.1088/1361-6528/abb505

M3 - Article

C2 - 33021224

AN - SCOPUS:85092801616

VL - 31

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 50

M1 - 505704

ER -

ID: 25674561