Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method. / Zarubanov, A. A.; Plyusnin, V. F.; Zhuravlev, K. S.
в: Semiconductors, Том 51, № 5, 01.05.2017, стр. 576-581.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method
AU - Zarubanov, A. A.
AU - Plyusnin, V. F.
AU - Zhuravlev, K. S.
PY - 2017/5/1
Y1 - 2017/5/1
N2 - The absorption, photoluminescence, and photoluminescence excitation spectra of CdS nanocrystals formed by the Langmuir–Blodgett method are explored. Features of the absorption and photoluminescence excitation spectra defined by optical transitions in the matrix and nanocrystals are identified. The efficiency of electronic excitation transfer from an organic matrix to nanocrystals is studied. It is shown that charge carriers efficiently transfer from the matrix to electron and hole size-quantization levels in nanocrystals and to acceptor defect levels in the band gap of nanocrystals. A large Stokes shift defined by fine exciton structure (bright and dark excitons) is observed. The shift is in the range 140–220 meV for nanocrystals 2.4 and 2.0 nm in radius.
AB - The absorption, photoluminescence, and photoluminescence excitation spectra of CdS nanocrystals formed by the Langmuir–Blodgett method are explored. Features of the absorption and photoluminescence excitation spectra defined by optical transitions in the matrix and nanocrystals are identified. The efficiency of electronic excitation transfer from an organic matrix to nanocrystals is studied. It is shown that charge carriers efficiently transfer from the matrix to electron and hole size-quantization levels in nanocrystals and to acceptor defect levels in the band gap of nanocrystals. A large Stokes shift defined by fine exciton structure (bright and dark excitons) is observed. The shift is in the range 140–220 meV for nanocrystals 2.4 and 2.0 nm in radius.
UR - http://www.scopus.com/inward/record.url?scp=85019634614&partnerID=8YFLogxK
U2 - 10.1134/S1063782617050268
DO - 10.1134/S1063782617050268
M3 - Article
AN - SCOPUS:85019634614
VL - 51
SP - 576
EP - 581
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 5
ER -
ID: 9561918