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Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method. / Zarubanov, A. A.; Plyusnin, V. F.; Zhuravlev, K. S.

In: Semiconductors, Vol. 51, No. 5, 01.05.2017, p. 576-581.

Research output: Contribution to journal › Article › peer-review

Harvard

Zarubanov, AA, Plyusnin, VF & Zhuravlev, KS 2017, 'Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method', Semiconductors, vol. 51, no. 5, pp. 576-581. https://doi.org/10.1134/S1063782617050268

APA

Zarubanov, A. A., Plyusnin, V. F., & Zhuravlev, K. S. (2017). Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method. Semiconductors, 51(5), 576-581. https://doi.org/10.1134/S1063782617050268

Vancouver

Zarubanov AA, Plyusnin VF, Zhuravlev KS. Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method. Semiconductors. 2017 May 1;51(5):576-581. doi: 10.1134/S1063782617050268

Author

Zarubanov, A. A. ; Plyusnin, V. F. ; Zhuravlev, K. S. / Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method. In: Semiconductors. 2017 ; Vol. 51, No. 5. pp. 576-581.

BibTeX

@article{d5e855d5b8324483bd9dea4c13c0b4ea,
title = "Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method",
abstract = "The absorption, photoluminescence, and photoluminescence excitation spectra of CdS nanocrystals formed by the Langmuir–Blodgett method are explored. Features of the absorption and photoluminescence excitation spectra defined by optical transitions in the matrix and nanocrystals are identified. The efficiency of electronic excitation transfer from an organic matrix to nanocrystals is studied. It is shown that charge carriers efficiently transfer from the matrix to electron and hole size-quantization levels in nanocrystals and to acceptor defect levels in the band gap of nanocrystals. A large Stokes shift defined by fine exciton structure (bright and dark excitons) is observed. The shift is in the range 140–220 meV for nanocrystals 2.4 and 2.0 nm in radius.",
author = "Zarubanov, {A. A.} and Plyusnin, {V. F.} and Zhuravlev, {K. S.}",
year = "2017",
month = may,
day = "1",
doi = "10.1134/S1063782617050268",
language = "English",
volume = "51",
pages = "576--581",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "5",

}

RIS

TY - JOUR

T1 - Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method

AU - Zarubanov, A. A.

AU - Plyusnin, V. F.

AU - Zhuravlev, K. S.

PY - 2017/5/1

Y1 - 2017/5/1

N2 - The absorption, photoluminescence, and photoluminescence excitation spectra of CdS nanocrystals formed by the Langmuir–Blodgett method are explored. Features of the absorption and photoluminescence excitation spectra defined by optical transitions in the matrix and nanocrystals are identified. The efficiency of electronic excitation transfer from an organic matrix to nanocrystals is studied. It is shown that charge carriers efficiently transfer from the matrix to electron and hole size-quantization levels in nanocrystals and to acceptor defect levels in the band gap of nanocrystals. A large Stokes shift defined by fine exciton structure (bright and dark excitons) is observed. The shift is in the range 140–220 meV for nanocrystals 2.4 and 2.0 nm in radius.

AB - The absorption, photoluminescence, and photoluminescence excitation spectra of CdS nanocrystals formed by the Langmuir–Blodgett method are explored. Features of the absorption and photoluminescence excitation spectra defined by optical transitions in the matrix and nanocrystals are identified. The efficiency of electronic excitation transfer from an organic matrix to nanocrystals is studied. It is shown that charge carriers efficiently transfer from the matrix to electron and hole size-quantization levels in nanocrystals and to acceptor defect levels in the band gap of nanocrystals. A large Stokes shift defined by fine exciton structure (bright and dark excitons) is observed. The shift is in the range 140–220 meV for nanocrystals 2.4 and 2.0 nm in radius.

UR - http://www.scopus.com/inward/record.url?scp=85019634614&partnerID=8YFLogxK

U2 - 10.1134/S1063782617050268

DO - 10.1134/S1063782617050268

M3 - Article

AN - SCOPUS:85019634614

VL - 51

SP - 576

EP - 581

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 5

ER -

ID: 9561918