Standard

Electron and hole bipolar injection in magnesium oxide films. / Perevalov, Timofey V.; Islamov, Damir R.; Zalyalov, Timur M. и др.

в: Applied Physics Letters, Том 124, № 4, 042903, 06.02.2024.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Perevalov, TV, Islamov, DR, Zalyalov, TM, Gismatulin, AA, Golyashov, VA, Tereshchenko, OE, Gorshkov, DV & Gritsenko, VA 2024, 'Electron and hole bipolar injection in magnesium oxide films', Applied Physics Letters, Том. 124, № 4, 042903. https://doi.org/10.1063/5.0180827

APA

Perevalov, T. V., Islamov, D. R., Zalyalov, T. M., Gismatulin, A. A., Golyashov, V. A., Tereshchenko, O. E., Gorshkov, D. V., & Gritsenko, V. A. (2024). Electron and hole bipolar injection in magnesium oxide films. Applied Physics Letters, 124(4), [042903]. https://doi.org/10.1063/5.0180827

Vancouver

Perevalov TV, Islamov DR, Zalyalov TM, Gismatulin AA, Golyashov VA, Tereshchenko OE и др. Electron and hole bipolar injection in magnesium oxide films. Applied Physics Letters. 2024 февр. 6;124(4):042903. doi: 10.1063/5.0180827

Author

Perevalov, Timofey V. ; Islamov, Damir R. ; Zalyalov, Timur M. и др. / Electron and hole bipolar injection in magnesium oxide films. в: Applied Physics Letters. 2024 ; Том 124, № 4.

BibTeX

@article{7222389954d4482293337a881b82bd36,
title = "Electron and hole bipolar injection in magnesium oxide films",
abstract = "It is assumed that the reliability and functionality of nonvolatile memory elements based on MgO are determined by the charge transport in MgO. In the present study, the type of MgO conductivity is established using experiments on the injection of minority charge-carriers in the n(p)-Si/MgO/Mg structures. It is shown that electrons and holes contribute to the MgO conductivity, causing bipolar charge transport. Using ab initio simulations, it was found that native point defects in MgO can provide both electron and hole conductivity.",
author = "Perevalov, {Timofey V.} and Islamov, {Damir R.} and Zalyalov, {Timur M.} and Gismatulin, {Andrei A.} and Golyashov, {Vladimir A.} and Tereshchenko, {Oleg E.} and Gorshkov, {Dmitry V.} and Gritsenko, {Vladimir A.}",
year = "2024",
month = feb,
day = "6",
doi = "10.1063/5.0180827",
language = "English",
volume = "124",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "4",

}

RIS

TY - JOUR

T1 - Electron and hole bipolar injection in magnesium oxide films

AU - Perevalov, Timofey V.

AU - Islamov, Damir R.

AU - Zalyalov, Timur M.

AU - Gismatulin, Andrei A.

AU - Golyashov, Vladimir A.

AU - Tereshchenko, Oleg E.

AU - Gorshkov, Dmitry V.

AU - Gritsenko, Vladimir A.

PY - 2024/2/6

Y1 - 2024/2/6

N2 - It is assumed that the reliability and functionality of nonvolatile memory elements based on MgO are determined by the charge transport in MgO. In the present study, the type of MgO conductivity is established using experiments on the injection of minority charge-carriers in the n(p)-Si/MgO/Mg structures. It is shown that electrons and holes contribute to the MgO conductivity, causing bipolar charge transport. Using ab initio simulations, it was found that native point defects in MgO can provide both electron and hole conductivity.

AB - It is assumed that the reliability and functionality of nonvolatile memory elements based on MgO are determined by the charge transport in MgO. In the present study, the type of MgO conductivity is established using experiments on the injection of minority charge-carriers in the n(p)-Si/MgO/Mg structures. It is shown that electrons and holes contribute to the MgO conductivity, causing bipolar charge transport. Using ab initio simulations, it was found that native point defects in MgO can provide both electron and hole conductivity.

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:001151696200002

UR - https://www.mendeley.com/catalogue/e74d0ea5-0fea-30d4-85e7-7152f8bfc7ab/

U2 - 10.1063/5.0180827

DO - 10.1063/5.0180827

M3 - Article

VL - 124

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 042903

ER -

ID: 61238052