TY - JOUR

T1 - Electrically controlled spin polarization in suspended GaAs quantum point contacts

AU - Pokhabov, D. A.

AU - Pogosov, A. G.

AU - Zhdanov, E. Yu

AU - Shevyrin, A. A.

AU - Bakarov, A. K.

AU - Shklyaev, A. A.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - We report on the observation of the lateral electric spin polarization effect in a suspended GaAs-based quantum point contact (QPC) separated from the substrate. The effect manifests itself in the experiment as the appearance of an additional half-integer plateaus at 0.5 2e 2/h when the asymmetric voltage is applied to the side gates in zero magnetic field. The appearance of the plateaus has been attributed to the spin degeneracy lifting caused by the spin-orbit coupling associated with the lateral electric field in the asymmetrically biased QPC. We have experimentally demonstrated that, despite the relatively small g-factor in GaAs, the observation of the spin polarization in the GaAs-based QPCs becomes possible after the suspension due to the enhancement of the electron-electron interaction and the effect of the electric field guiding. These features are caused by a partial confinement of the electric field lines within a suspended semiconductor layer with a high dielectric constant.

AB - We report on the observation of the lateral electric spin polarization effect in a suspended GaAs-based quantum point contact (QPC) separated from the substrate. The effect manifests itself in the experiment as the appearance of an additional half-integer plateaus at 0.5 2e 2/h when the asymmetric voltage is applied to the side gates in zero magnetic field. The appearance of the plateaus has been attributed to the spin degeneracy lifting caused by the spin-orbit coupling associated with the lateral electric field in the asymmetrically biased QPC. We have experimentally demonstrated that, despite the relatively small g-factor in GaAs, the observation of the spin polarization in the GaAs-based QPCs becomes possible after the suspension due to the enhancement of the electron-electron interaction and the effect of the electric field guiding. These features are caused by a partial confinement of the electric field lines within a suspended semiconductor layer with a high dielectric constant.

UR - http://www.scopus.com/inward/record.url?scp=85061012331&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1124/6/061001

DO - 10.1088/1742-6596/1124/6/061001

M3 - Conference article

AN - SCOPUS:85061012331

VL - 1124

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 6

M1 - 061001

T2 - 5th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, Saint Petersburg OPEN 2018

Y2 - 2 April 2018 through 5 April 2018

ER -