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Electrical Transport Properties of Vanadium-Doped Bi2Te2.4Se0.6. / Riha, Christian; Düzel, Birkan; Graser, Karl и др.
в: Physica Status Solidi (B) Basic Research, Том 258, № 1, 2000088, 01.2021.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Electrical Transport Properties of Vanadium-Doped Bi2Te2.4Se0.6
AU - Riha, Christian
AU - Düzel, Birkan
AU - Graser, Karl
AU - Chiatti, Olivio
AU - Golias, Evangelos
AU - Sánchez-Barriga, Jaime
AU - Rader, Oliver
AU - Tereshchenko, Oleg E.
AU - Fischer, Saskia F.
N1 - Publisher Copyright: © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Copyright: Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2021/1
Y1 - 2021/1
N2 - Vanadium-doped Bi2–xTe2.4Se0.6 single crystals, with x = 0.015 and 0.03, are grown by the Bridgman method. Bandstructure characterization by angle-resolved photoemission spectroscopy (ARPES) measurements shows gapless topological surface states for both vanadium concentrations. The Van-der-Pauw resistivity, the Hall charge carrier density, and the mobility in the temperature range from 0.3 to 300 K are strongly dependent on vanadium concentration, with carrier densities as low as 1.5 × 1016 cm−3 and mobilities as high as 570 cm2 V−1s−1. As expected for transport in gapless topological surface states, the resistivity, carrier density, and mobility are constant below 10 K. The magnetoresistance shows weak antilocalization for both vanadium concentrations in the same temperature range. The weak antilocalization is analyzed with the Hikami–Larkin–Nagaoka model, which yields phase-coherence lengths of up to 250 nm for x = 0.015.
AB - Vanadium-doped Bi2–xTe2.4Se0.6 single crystals, with x = 0.015 and 0.03, are grown by the Bridgman method. Bandstructure characterization by angle-resolved photoemission spectroscopy (ARPES) measurements shows gapless topological surface states for both vanadium concentrations. The Van-der-Pauw resistivity, the Hall charge carrier density, and the mobility in the temperature range from 0.3 to 300 K are strongly dependent on vanadium concentration, with carrier densities as low as 1.5 × 1016 cm−3 and mobilities as high as 570 cm2 V−1s−1. As expected for transport in gapless topological surface states, the resistivity, carrier density, and mobility are constant below 10 K. The magnetoresistance shows weak antilocalization for both vanadium concentrations in the same temperature range. The weak antilocalization is analyzed with the Hikami–Larkin–Nagaoka model, which yields phase-coherence lengths of up to 250 nm for x = 0.015.
KW - photoemission
KW - topological insulators
KW - transport properties
KW - weak antilocalization
UR - http://www.scopus.com/inward/record.url?scp=85087616630&partnerID=8YFLogxK
U2 - 10.1002/pssb.202000088
DO - 10.1002/pssb.202000088
M3 - Article
AN - SCOPUS:85087616630
VL - 258
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
SN - 0370-1972
IS - 1
M1 - 2000088
ER -
ID: 24737173