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Electrical Transport Properties of Vanadium-Doped Bi2Te2.4Se0.6. / Riha, Christian; Düzel, Birkan; Graser, Karl et al.

In: Physica Status Solidi (B) Basic Research, Vol. 258, No. 1, 2000088, 01.2021.

Research output: Contribution to journal › Article › peer-review

Harvard

Riha, C, Düzel, B, Graser, K, Chiatti, O, Golias, E, Sánchez-Barriga, J, Rader, O, Tereshchenko, OE & Fischer, SF 2021, 'Electrical Transport Properties of Vanadium-Doped Bi2Te2.4Se0.6', Physica Status Solidi (B) Basic Research, vol. 258, no. 1, 2000088. https://doi.org/10.1002/pssb.202000088

APA

Riha, C., Düzel, B., Graser, K., Chiatti, O., Golias, E., Sánchez-Barriga, J., Rader, O., Tereshchenko, O. E., & Fischer, S. F. (2021). Electrical Transport Properties of Vanadium-Doped Bi2Te2.4Se0.6. Physica Status Solidi (B) Basic Research, 258(1), [2000088]. https://doi.org/10.1002/pssb.202000088

Vancouver

Riha C, Düzel B, Graser K, Chiatti O, Golias E, Sánchez-Barriga J et al. Electrical Transport Properties of Vanadium-Doped Bi2Te2.4Se0.6. Physica Status Solidi (B) Basic Research. 2021 Jan;258(1):2000088. doi: 10.1002/pssb.202000088

Author

Riha, Christian ; Düzel, Birkan ; Graser, Karl et al. / Electrical Transport Properties of Vanadium-Doped Bi2Te2.4Se0.6. In: Physica Status Solidi (B) Basic Research. 2021 ; Vol. 258, No. 1.

BibTeX

@article{7a9c14bf092a44c689db0e8d5bf6f92a,
title = "Electrical Transport Properties of Vanadium-Doped Bi2Te2.4Se0.6",
abstract = "Vanadium-doped Bi2–xTe2.4Se0.6 single crystals, with x = 0.015 and 0.03, are grown by the Bridgman method. Bandstructure characterization by angle-resolved photoemission spectroscopy (ARPES) measurements shows gapless topological surface states for both vanadium concentrations. The Van-der-Pauw resistivity, the Hall charge carrier density, and the mobility in the temperature range from 0.3 to 300 K are strongly dependent on vanadium concentration, with carrier densities as low as 1.5 × 1016 cm−3 and mobilities as high as 570 cm2 V−1s−1. As expected for transport in gapless topological surface states, the resistivity, carrier density, and mobility are constant below 10 K. The magnetoresistance shows weak antilocalization for both vanadium concentrations in the same temperature range. The weak antilocalization is analyzed with the Hikami–Larkin–Nagaoka model, which yields phase-coherence lengths of up to 250 nm for x = 0.015.",
keywords = "photoemission, topological insulators, transport properties, weak antilocalization",
author = "Christian Riha and Birkan D{\"u}zel and Karl Graser and Olivio Chiatti and Evangelos Golias and Jaime S{\'a}nchez-Barriga and Oliver Rader and Tereshchenko, {Oleg E.} and Fischer, {Saskia F.}",
note = "Publisher Copyright: {\textcopyright} 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2021",
month = jan,
doi = "10.1002/pssb.202000088",
language = "English",
volume = "258",
journal = "Physica Status Solidi (B): Basic Research",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "1",

}

RIS

TY - JOUR

T1 - Electrical Transport Properties of Vanadium-Doped Bi2Te2.4Se0.6

AU - Riha, Christian

AU - Düzel, Birkan

AU - Graser, Karl

AU - Chiatti, Olivio

AU - Golias, Evangelos

AU - Sánchez-Barriga, Jaime

AU - Rader, Oliver

AU - Tereshchenko, Oleg E.

AU - Fischer, Saskia F.

N1 - Publisher Copyright: © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2021/1

Y1 - 2021/1

N2 - Vanadium-doped Bi2–xTe2.4Se0.6 single crystals, with x = 0.015 and 0.03, are grown by the Bridgman method. Bandstructure characterization by angle-resolved photoemission spectroscopy (ARPES) measurements shows gapless topological surface states for both vanadium concentrations. The Van-der-Pauw resistivity, the Hall charge carrier density, and the mobility in the temperature range from 0.3 to 300 K are strongly dependent on vanadium concentration, with carrier densities as low as 1.5 × 1016 cm−3 and mobilities as high as 570 cm2 V−1s−1. As expected for transport in gapless topological surface states, the resistivity, carrier density, and mobility are constant below 10 K. The magnetoresistance shows weak antilocalization for both vanadium concentrations in the same temperature range. The weak antilocalization is analyzed with the Hikami–Larkin–Nagaoka model, which yields phase-coherence lengths of up to 250 nm for x = 0.015.

AB - Vanadium-doped Bi2–xTe2.4Se0.6 single crystals, with x = 0.015 and 0.03, are grown by the Bridgman method. Bandstructure characterization by angle-resolved photoemission spectroscopy (ARPES) measurements shows gapless topological surface states for both vanadium concentrations. The Van-der-Pauw resistivity, the Hall charge carrier density, and the mobility in the temperature range from 0.3 to 300 K are strongly dependent on vanadium concentration, with carrier densities as low as 1.5 × 1016 cm−3 and mobilities as high as 570 cm2 V−1s−1. As expected for transport in gapless topological surface states, the resistivity, carrier density, and mobility are constant below 10 K. The magnetoresistance shows weak antilocalization for both vanadium concentrations in the same temperature range. The weak antilocalization is analyzed with the Hikami–Larkin–Nagaoka model, which yields phase-coherence lengths of up to 250 nm for x = 0.015.

KW - photoemission

KW - topological insulators

KW - transport properties

KW - weak antilocalization

UR - http://www.scopus.com/inward/record.url?scp=85087616630&partnerID=8YFLogxK

U2 - 10.1002/pssb.202000088

DO - 10.1002/pssb.202000088

M3 - Article

AN - SCOPUS:85087616630

VL - 258

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 1

M1 - 2000088

ER -

ID: 24737173