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Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates. / Petrushkov, M. O.; Abramkin, D. S.; Emelyanov, E. A. и др.

в: Semiconductors, Том 54, № 12, 12.2020, стр. 1548-1554.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Petrushkov, MO, Abramkin, DS, Emelyanov, EA, Putyato, MA, Vasev, AV, Loshkarev, DI, Yesin, MY, Komkov, OS, Firsov, DD & Preobrazhenskii, VV 2020, 'Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates', Semiconductors, Том. 54, № 12, стр. 1548-1554. https://doi.org/10.1134/S1063782620120295

APA

Petrushkov, M. O., Abramkin, D. S., Emelyanov, E. A., Putyato, M. A., Vasev, A. V., Loshkarev, D. I., Yesin, M. Y., Komkov, O. S., Firsov, D. D., & Preobrazhenskii, V. V. (2020). Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates. Semiconductors, 54(12), 1548-1554. https://doi.org/10.1134/S1063782620120295

Vancouver

Petrushkov MO, Abramkin DS, Emelyanov EA, Putyato MA, Vasev AV, Loshkarev DI и др. Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates. Semiconductors. 2020 дек.;54(12):1548-1554. doi: 10.1134/S1063782620120295

Author

Petrushkov, M. O. ; Abramkin, D. S. ; Emelyanov, E. A. и др. / Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates. в: Semiconductors. 2020 ; Том 54, № 12. стр. 1548-1554.

BibTeX

@article{241ea261ca6b43b6b3fc5c4303fbef9f,
title = "Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates",
abstract = "GaSb films are grown by molecular-beam epitaxy using AlSb/As/Si transition layers on vicinal Si(001) substrates miscuted by 6° in (111) plane direction. The effect of GaSb films crystallographic orientation on their structural properties and surface morphology is investigated. It is found that the GaSb(001)/Si films are characterized by better structural perfection, a lower concentration of point defects, as well as a more planar and isotropic surface morphology as compared with the GaSb(001) films. The possible cause for the observed othernesses between the GaSb films with different orientations is an increased density of antiphase domains in GaSb(001) films. The morphological features of the grown films are caused mainly by the edges of terraces and, to a lesser extent, by anisotropy of the incorporation of Ga adatoms into the edges of the terraces.",
keywords = "film crystallographic orientation, GaSb on Si(001), molecular-beam epitaxy, structural perfection, surface morphology, EPITAXY, INITIAL GROWTH STAGE, LAYER, GAAS",
author = "Petrushkov, {M. O.} and Abramkin, {D. S.} and Emelyanov, {E. A.} and Putyato, {M. A.} and Vasev, {A. V.} and Loshkarev, {D. I.} and Yesin, {M. Yu} and Komkov, {O. S.} and Firsov, {D. D.} and Preobrazhenskii, {V. V.}",
note = "Funding Information: This work was supported by the state assignment no. 0306-2020-0011. Publisher Copyright: {\textcopyright} 2020, Pleiades Publishing, Ltd. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2020",
month = dec,
doi = "10.1134/S1063782620120295",
language = "English",
volume = "54",
pages = "1548--1554",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "12",

}

RIS

TY - JOUR

T1 - Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates

AU - Petrushkov, M. O.

AU - Abramkin, D. S.

AU - Emelyanov, E. A.

AU - Putyato, M. A.

AU - Vasev, A. V.

AU - Loshkarev, D. I.

AU - Yesin, M. Yu

AU - Komkov, O. S.

AU - Firsov, D. D.

AU - Preobrazhenskii, V. V.

N1 - Funding Information: This work was supported by the state assignment no. 0306-2020-0011. Publisher Copyright: © 2020, Pleiades Publishing, Ltd. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/12

Y1 - 2020/12

N2 - GaSb films are grown by molecular-beam epitaxy using AlSb/As/Si transition layers on vicinal Si(001) substrates miscuted by 6° in (111) plane direction. The effect of GaSb films crystallographic orientation on their structural properties and surface morphology is investigated. It is found that the GaSb(001)/Si films are characterized by better structural perfection, a lower concentration of point defects, as well as a more planar and isotropic surface morphology as compared with the GaSb(001) films. The possible cause for the observed othernesses between the GaSb films with different orientations is an increased density of antiphase domains in GaSb(001) films. The morphological features of the grown films are caused mainly by the edges of terraces and, to a lesser extent, by anisotropy of the incorporation of Ga adatoms into the edges of the terraces.

AB - GaSb films are grown by molecular-beam epitaxy using AlSb/As/Si transition layers on vicinal Si(001) substrates miscuted by 6° in (111) plane direction. The effect of GaSb films crystallographic orientation on their structural properties and surface morphology is investigated. It is found that the GaSb(001)/Si films are characterized by better structural perfection, a lower concentration of point defects, as well as a more planar and isotropic surface morphology as compared with the GaSb(001) films. The possible cause for the observed othernesses between the GaSb films with different orientations is an increased density of antiphase domains in GaSb(001) films. The morphological features of the grown films are caused mainly by the edges of terraces and, to a lesser extent, by anisotropy of the incorporation of Ga adatoms into the edges of the terraces.

KW - film crystallographic orientation

KW - GaSb on Si(001)

KW - molecular-beam epitaxy

KW - structural perfection

KW - surface morphology

KW - EPITAXY

KW - INITIAL GROWTH STAGE

KW - LAYER

KW - GAAS

UR - http://www.scopus.com/inward/record.url?scp=85097047595&partnerID=8YFLogxK

U2 - 10.1134/S1063782620120295

DO - 10.1134/S1063782620120295

M3 - Article

AN - SCOPUS:85097047595

VL - 54

SP - 1548

EP - 1554

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 12

ER -

ID: 26205370