Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Effect of terminal methyl groups concentration on properties of organosilicate glass low dielectric constant films. / Liu, Chunhui; Qi, Qi; Seregin, Dmitry S. и др.
в: Japanese Journal of Applied Physics, Том 57, № 7, 07MC01, 01.07.2018.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Effect of terminal methyl groups concentration on properties of organosilicate glass low dielectric constant films
AU - Liu, Chunhui
AU - Qi, Qi
AU - Seregin, Dmitry S.
AU - Vishnevskiy, Alexey S.
AU - Wang, Yingjie
AU - Wei, Shuhua
AU - Zhang, Jing
AU - Vorotilov, Konstantin A.
AU - Dultsev, Fedor N.
AU - Baklanov, Mikhail R.
PY - 2018/7/1
Y1 - 2018/7/1
N2 - Surfactant-templated organosilicate glass (OSG) based low-k films are deposited by using tetraethyl orthosilicate/methyltriethoxysilane (TEOS/ MTEOS) mixture with different ratio and spin-on technology with the goal of understanding the effects of terminal methyl groups on chemical and structural properties. It is shown that despite of constant surfactant concentration these films have quite different properties when the changing of CH3/Si ratio. The most important changes are related to change of their hydrophilicity, change of mechanical properties, the pore size and to the shift of Si-CH3 peak position in Fourier transform infrared (FTIR) spectra. The films are becoming hydrophobic if they are deposited from sols with CH3/Si ratio higher than 0.2. The Young's modulus gradually decreases with increasing the terminal methyl groups concentration in the films. The pore size increases with concentration of methyl groups and changes from cylindrical to ink-bottle shape. The nature of SiCH3 peak shift is explained by using molecular mechanics simulation. It is shown that the reason of this shift is change of dΠ-pΠ hybridization in Si-O-Si bonds, which is affected by presence of CH3 group.
AB - Surfactant-templated organosilicate glass (OSG) based low-k films are deposited by using tetraethyl orthosilicate/methyltriethoxysilane (TEOS/ MTEOS) mixture with different ratio and spin-on technology with the goal of understanding the effects of terminal methyl groups on chemical and structural properties. It is shown that despite of constant surfactant concentration these films have quite different properties when the changing of CH3/Si ratio. The most important changes are related to change of their hydrophilicity, change of mechanical properties, the pore size and to the shift of Si-CH3 peak position in Fourier transform infrared (FTIR) spectra. The films are becoming hydrophobic if they are deposited from sols with CH3/Si ratio higher than 0.2. The Young's modulus gradually decreases with increasing the terminal methyl groups concentration in the films. The pore size increases with concentration of methyl groups and changes from cylindrical to ink-bottle shape. The nature of SiCH3 peak shift is explained by using molecular mechanics simulation. It is shown that the reason of this shift is change of dΠ-pΠ hybridization in Si-O-Si bonds, which is affected by presence of CH3 group.
KW - CHEMICAL-VAPOR-DEPOSITION
KW - LOW-K FILMS
KW - TRANSFORM INFRARED-SPECTROSCOPY
KW - SILICON-OXIDE FILMS
KW - THIN-FILMS
KW - ELLIPSOMETRIC POROSIMETRY
KW - SICOH FILMS
KW - PORE-SIZE
KW - PLASMA
KW - PECVD
UR - http://www.scopus.com/inward/record.url?scp=85049376342&partnerID=8YFLogxK
U2 - 10.7567/JJAP.57.07MC01
DO - 10.7567/JJAP.57.07MC01
M3 - Article
AN - SCOPUS:85049376342
VL - 57
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7
M1 - 07MC01
ER -
ID: 14316689