TY - JOUR

T1 - Effect of SiO2buffer layer on phase transition properties of VO2films fabricated by low-pressure chemical vapor deposition

AU - Mutilin, Sergey

AU - Kapoguzov, Kirill

AU - Prinz, Victor

AU - Yakovkina, Lyubov

N1 - Funding Information: The present work was supported by the Russian Science Foundation (Grant No. 21-19-00873). The SEM images were obtained on a Hitachi SU8220 electron microscope at the Joint Use Center “Nanostructures.” The authors express their gratitude to Dr. T. A. Gavrilova and Dr. E. A. Maksimovskii for some of the SEM images taken, Dr. A. I. Komonov for the performed AFM measurements, and Dr. R. A. Soots for technological assistance. Publisher Copyright: © 2022 Author(s).

PY - 2022/12/1

Y1 - 2022/12/1

N2 - Vanadium dioxide (VO2) is a promising material with semiconductor-metal phase transition for novel electronic and optic applications. One of the most widely used substrates for VO2 films is silicon (Si) covered with a silicon dioxide (SiO2) buffer layer because such a substrate is compatible with standard silicon technology. However, little attention has been paid to the effect of SiO2 buffer layer preparation and properties of the VO2/SiO2 interface to the VO2 phase-transition parameters. In the present paper, we investigate the phase-transition properties of VO2 films grown by low-pressure chemical vapor deposition on dry and wet thermally grown SiO2 buffer layers. The x-ray diffraction technique, scanning electron microscopy, and temperature-dependent resistance measurements showed a high crystal quality of the grown VO2 films. We identified the synthesis conditions for obtaining a sharp reversible semiconductor-metal phase transition in VO2 films on both SiO2 buffer layers. It was found that the resistance jump due to phase transition in VO2 films grown on dry and wet SiO2 was 6.5 × 103 and 5.6 × 103 with the hysteresis widths being equal to 2 and 3 °C, respectively. The calculated average size of VO2 crystallites on the dry SiO2 buffer layer proved to be 1.5-2 times larger than that on the wet SiO2 buffer layer. The field-effect measurements showed that the electric-current modulation in VO2 films synthesized on dry SiO2 is almost ten times higher than on wet SiO2 due to different interface layer properties. For 250 nm VO2 film on dry SiO2, the current modulation value reached 0.6%. The results of this work may be useful for the fabrication of new VO2-based functional devices compatible with standard silicon technology.

AB - Vanadium dioxide (VO2) is a promising material with semiconductor-metal phase transition for novel electronic and optic applications. One of the most widely used substrates for VO2 films is silicon (Si) covered with a silicon dioxide (SiO2) buffer layer because such a substrate is compatible with standard silicon technology. However, little attention has been paid to the effect of SiO2 buffer layer preparation and properties of the VO2/SiO2 interface to the VO2 phase-transition parameters. In the present paper, we investigate the phase-transition properties of VO2 films grown by low-pressure chemical vapor deposition on dry and wet thermally grown SiO2 buffer layers. The x-ray diffraction technique, scanning electron microscopy, and temperature-dependent resistance measurements showed a high crystal quality of the grown VO2 films. We identified the synthesis conditions for obtaining a sharp reversible semiconductor-metal phase transition in VO2 films on both SiO2 buffer layers. It was found that the resistance jump due to phase transition in VO2 films grown on dry and wet SiO2 was 6.5 × 103 and 5.6 × 103 with the hysteresis widths being equal to 2 and 3 °C, respectively. The calculated average size of VO2 crystallites on the dry SiO2 buffer layer proved to be 1.5-2 times larger than that on the wet SiO2 buffer layer. The field-effect measurements showed that the electric-current modulation in VO2 films synthesized on dry SiO2 is almost ten times higher than on wet SiO2 due to different interface layer properties. For 250 nm VO2 film on dry SiO2, the current modulation value reached 0.6%. The results of this work may be useful for the fabrication of new VO2-based functional devices compatible with standard silicon technology.

UR - http://www.scopus.com/inward/record.url?scp=85141867020&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/a4a44016-a4aa-31c6-a432-207a0016cd0e/

U2 - 10.1116/6.0002146

DO - 10.1116/6.0002146

M3 - Article

AN - SCOPUS:85141867020

VL - 40

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

SN - 0734-2101

IS - 6

M1 - 063404

ER -