Effect of Rashba splitting on ultrafast carrier dynamics in BiTeI

Standard

Effect of Rashba splitting on ultrafast carrier dynamics in BiTeI. / Ketterl, Anna S.; Andres, Beatrice; Polverigiani, Marco и др.

в: Physical Review B, Том 103, № 8, 085406, 03.02.2021.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Ketterl, AS, Andres, B, Polverigiani, M, Voroshnin, V, Gahl, C, Kokh, KA, Tereshchenko, OE, Chulkov, EV, Shikin, A & Weinelt, M 2021, 'Effect of Rashba splitting on ultrafast carrier dynamics in BiTeI', Physical Review B, Том. 103, № 8, 085406. https://doi.org/10.1103/PhysRevB.103.085406

APA

Ketterl, A. S., Andres, B., Polverigiani, M., Voroshnin, V., Gahl, C., Kokh, K. A., Tereshchenko, O. E., Chulkov, E. V., Shikin, A., & Weinelt, M. (2021). Effect of Rashba splitting on ultrafast carrier dynamics in BiTeI. Physical Review B, 103(8), [085406]. https://doi.org/10.1103/PhysRevB.103.085406

Vancouver

Ketterl AS, Andres B, Polverigiani M, Voroshnin V, Gahl C, Kokh KA и др. Effect of Rashba splitting on ultrafast carrier dynamics in BiTeI. Physical Review B. 2021 февр. 3;103(8):085406. doi: 10.1103/PhysRevB.103.085406

Author

Ketterl, Anna S. ; Andres, Beatrice ; Polverigiani, Marco и др. / Effect of Rashba splitting on ultrafast carrier dynamics in BiTeI. в: Physical Review B. 2021 ; Том 103, № 8.

BibTeX

@article{2696d898afb4408d92f3e89443728edf,

title = "Effect of Rashba splitting on ultrafast carrier dynamics in BiTeI",

abstract = "Narrow-gap semiconductors with strong spin-orbit coupling such as bismuth tellurohalides have become popular candidates for spintronic applications. But driving spin-polarized photocurrents in these materials with circularly polarized light requires picosecond lifetimes of the photoexcited carriers and low spin-flip scattering rates. In search of these essential ingredients, we conducted an extensive study of the carrier dynamics on the Te-terminated surface of BiTeI, which exhibits a giant Rashba splitting of both surface and bulk states. We observe a complex interplay of surface and bulk dynamics after photoexcitation. Carriers are rapidly rearranged in momentum space by quasielastic phonon and defect scattering, while a phonon bottleneck leads to a slow equilibration between bulk electrons and lattice. The particular band dispersion opens an inelastic decay channel for hot carriers in the form of plasmon excitations, which are immanent to Rashba-split systems. These ultrafast scattering processes effectively redistribute excited carriers in momentum and energy space and thereby inhibit spin-polarized photocurrents.",

author = "Ketterl, {Anna S.} and Beatrice Andres and Marco Polverigiani and Vladimir Voroshnin and Cornelius Gahl and Kokh, {Konstantin A.} and Tereshchenko, {Oleg E.} and Chulkov, {Evgueni V.} and Alexander Shikin and Martin Weinelt",

year = "2021",

month = feb,

day = "3",

doi = "10.1103/PhysRevB.103.085406",

language = "English",

volume = "103",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society",

number = "8",

}

RIS

TY - JOUR

T1 - Effect of Rashba splitting on ultrafast carrier dynamics in BiTeI

AU - Ketterl, Anna S.

AU - Andres, Beatrice

AU - Polverigiani, Marco

AU - Voroshnin, Vladimir

AU - Gahl, Cornelius

AU - Kokh, Konstantin A.

AU - Tereshchenko, Oleg E.

AU - Chulkov, Evgueni V.

AU - Shikin, Alexander

AU - Weinelt, Martin

PY - 2021/2/3

Y1 - 2021/2/3

N2 - Narrow-gap semiconductors with strong spin-orbit coupling such as bismuth tellurohalides have become popular candidates for spintronic applications. But driving spin-polarized photocurrents in these materials with circularly polarized light requires picosecond lifetimes of the photoexcited carriers and low spin-flip scattering rates. In search of these essential ingredients, we conducted an extensive study of the carrier dynamics on the Te-terminated surface of BiTeI, which exhibits a giant Rashba splitting of both surface and bulk states. We observe a complex interplay of surface and bulk dynamics after photoexcitation. Carriers are rapidly rearranged in momentum space by quasielastic phonon and defect scattering, while a phonon bottleneck leads to a slow equilibration between bulk electrons and lattice. The particular band dispersion opens an inelastic decay channel for hot carriers in the form of plasmon excitations, which are immanent to Rashba-split systems. These ultrafast scattering processes effectively redistribute excited carriers in momentum and energy space and thereby inhibit spin-polarized photocurrents.

AB - Narrow-gap semiconductors with strong spin-orbit coupling such as bismuth tellurohalides have become popular candidates for spintronic applications. But driving spin-polarized photocurrents in these materials with circularly polarized light requires picosecond lifetimes of the photoexcited carriers and low spin-flip scattering rates. In search of these essential ingredients, we conducted an extensive study of the carrier dynamics on the Te-terminated surface of BiTeI, which exhibits a giant Rashba splitting of both surface and bulk states. We observe a complex interplay of surface and bulk dynamics after photoexcitation. Carriers are rapidly rearranged in momentum space by quasielastic phonon and defect scattering, while a phonon bottleneck leads to a slow equilibration between bulk electrons and lattice. The particular band dispersion opens an inelastic decay channel for hot carriers in the form of plasmon excitations, which are immanent to Rashba-split systems. These ultrafast scattering processes effectively redistribute excited carriers in momentum and energy space and thereby inhibit spin-polarized photocurrents.

UR - http://www.scopus.com/inward/record.url?scp=85101942177&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.103.085406

DO - 10.1103/PhysRevB.103.085406

M3 - Article

AN - SCOPUS:85101942177

VL - 103

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 8

M1 - 085406

ER -

ID: 28010619