Effect of Rashba splitting on ultrafast carrier dynamics in BiTeI

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Effect of Rashba splitting on ultrafast carrier dynamics in BiTeI. / Ketterl, Anna S.; Andres, Beatrice; Polverigiani, Marco et al.

In: Physical Review B, Vol. 103, No. 8, 085406, 03.02.2021.

Research output: Contribution to journal › Article › peer-review

Harvard

Ketterl, AS, Andres, B, Polverigiani, M, Voroshnin, V, Gahl, C, Kokh, KA, Tereshchenko, OE, Chulkov, EV, Shikin, A & Weinelt, M 2021, 'Effect of Rashba splitting on ultrafast carrier dynamics in BiTeI', Physical Review B, vol. 103, no. 8, 085406. https://doi.org/10.1103/PhysRevB.103.085406

APA

Ketterl, A. S., Andres, B., Polverigiani, M., Voroshnin, V., Gahl, C., Kokh, K. A., Tereshchenko, O. E., Chulkov, E. V., Shikin, A., & Weinelt, M. (2021). Effect of Rashba splitting on ultrafast carrier dynamics in BiTeI. Physical Review B, 103(8), [085406]. https://doi.org/10.1103/PhysRevB.103.085406

Vancouver

Ketterl AS, Andres B, Polverigiani M, Voroshnin V, Gahl C, Kokh KA et al. Effect of Rashba splitting on ultrafast carrier dynamics in BiTeI. Physical Review B. 2021 Feb 3;103(8):085406. doi: 10.1103/PhysRevB.103.085406

Author

Ketterl, Anna S. ; Andres, Beatrice ; Polverigiani, Marco et al. / Effect of Rashba splitting on ultrafast carrier dynamics in BiTeI. In: Physical Review B. 2021 ; Vol. 103, No. 8.

BibTeX

@article{2696d898afb4408d92f3e89443728edf,

title = "Effect of Rashba splitting on ultrafast carrier dynamics in BiTeI",

abstract = "Narrow-gap semiconductors with strong spin-orbit coupling such as bismuth tellurohalides have become popular candidates for spintronic applications. But driving spin-polarized photocurrents in these materials with circularly polarized light requires picosecond lifetimes of the photoexcited carriers and low spin-flip scattering rates. In search of these essential ingredients, we conducted an extensive study of the carrier dynamics on the Te-terminated surface of BiTeI, which exhibits a giant Rashba splitting of both surface and bulk states. We observe a complex interplay of surface and bulk dynamics after photoexcitation. Carriers are rapidly rearranged in momentum space by quasielastic phonon and defect scattering, while a phonon bottleneck leads to a slow equilibration between bulk electrons and lattice. The particular band dispersion opens an inelastic decay channel for hot carriers in the form of plasmon excitations, which are immanent to Rashba-split systems. These ultrafast scattering processes effectively redistribute excited carriers in momentum and energy space and thereby inhibit spin-polarized photocurrents.",

author = "Ketterl, {Anna S.} and Beatrice Andres and Marco Polverigiani and Vladimir Voroshnin and Cornelius Gahl and Kokh, {Konstantin A.} and Tereshchenko, {Oleg E.} and Chulkov, {Evgueni V.} and Alexander Shikin and Martin Weinelt",

year = "2021",

month = feb,

day = "3",

doi = "10.1103/PhysRevB.103.085406",

language = "English",

volume = "103",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society",

number = "8",

}

RIS

TY - JOUR

T1 - Effect of Rashba splitting on ultrafast carrier dynamics in BiTeI

AU - Ketterl, Anna S.

AU - Andres, Beatrice

AU - Polverigiani, Marco

AU - Voroshnin, Vladimir

AU - Gahl, Cornelius

AU - Kokh, Konstantin A.

AU - Tereshchenko, Oleg E.

AU - Chulkov, Evgueni V.

AU - Shikin, Alexander

AU - Weinelt, Martin

PY - 2021/2/3

Y1 - 2021/2/3

N2 - Narrow-gap semiconductors with strong spin-orbit coupling such as bismuth tellurohalides have become popular candidates for spintronic applications. But driving spin-polarized photocurrents in these materials with circularly polarized light requires picosecond lifetimes of the photoexcited carriers and low spin-flip scattering rates. In search of these essential ingredients, we conducted an extensive study of the carrier dynamics on the Te-terminated surface of BiTeI, which exhibits a giant Rashba splitting of both surface and bulk states. We observe a complex interplay of surface and bulk dynamics after photoexcitation. Carriers are rapidly rearranged in momentum space by quasielastic phonon and defect scattering, while a phonon bottleneck leads to a slow equilibration between bulk electrons and lattice. The particular band dispersion opens an inelastic decay channel for hot carriers in the form of plasmon excitations, which are immanent to Rashba-split systems. These ultrafast scattering processes effectively redistribute excited carriers in momentum and energy space and thereby inhibit spin-polarized photocurrents.

AB - Narrow-gap semiconductors with strong spin-orbit coupling such as bismuth tellurohalides have become popular candidates for spintronic applications. But driving spin-polarized photocurrents in these materials with circularly polarized light requires picosecond lifetimes of the photoexcited carriers and low spin-flip scattering rates. In search of these essential ingredients, we conducted an extensive study of the carrier dynamics on the Te-terminated surface of BiTeI, which exhibits a giant Rashba splitting of both surface and bulk states. We observe a complex interplay of surface and bulk dynamics after photoexcitation. Carriers are rapidly rearranged in momentum space by quasielastic phonon and defect scattering, while a phonon bottleneck leads to a slow equilibration between bulk electrons and lattice. The particular band dispersion opens an inelastic decay channel for hot carriers in the form of plasmon excitations, which are immanent to Rashba-split systems. These ultrafast scattering processes effectively redistribute excited carriers in momentum and energy space and thereby inhibit spin-polarized photocurrents.

UR - http://www.scopus.com/inward/record.url?scp=85101942177&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.103.085406

DO - 10.1103/PhysRevB.103.085406

M3 - Article

AN - SCOPUS:85101942177

VL - 103

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 8

M1 - 085406

ER -

ID: 28010619