TY - JOUR

T1 - Edge States and Capacitance of a 2D Topological Insulator

AU - Braginsky, Leonid S.

AU - Entin, Matvey V.

PY - 2019/6/1

Y1 - 2019/6/1

N2 - The planar capacitance of the 2D topological insulator (TI) based on HgTe layer is studied. It is assumed that the width of the HgTe layer is close to the critical value corresponding to zero energy gap. The developed width fluctuations lead to the formation of internal edge states at the interfaces between ordinary and topological insulating phases. The edge states energies cover the entire energy gap. These states are recharging under applied voltage. The geometric capacitance CG is found in the percolation approach. Besides, the quantum capacitance has been calculated. At last, the problem of non-local capacitance in a random network of the edge states is considered.

AB - The planar capacitance of the 2D topological insulator (TI) based on HgTe layer is studied. It is assumed that the width of the HgTe layer is close to the critical value corresponding to zero energy gap. The developed width fluctuations lead to the formation of internal edge states at the interfaces between ordinary and topological insulating phases. The edge states energies cover the entire energy gap. These states are recharging under applied voltage. The geometric capacitance CG is found in the percolation approach. Besides, the quantum capacitance has been calculated. At last, the problem of non-local capacitance in a random network of the edge states is considered.

KW - capacitance

KW - edge states

KW - percolation

KW - random edge network

KW - two-dimensional topological insulators

UR - http://www.scopus.com/inward/record.url?scp=85066090163&partnerID=8YFLogxK

U2 - 10.1002/pssb.201800675

DO - 10.1002/pssb.201800675

M3 - Article

AN - SCOPUS:85066090163

VL - 256

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 6

M1 - 1800675

ER -