TY - JOUR

T1 - Dynamics of Growth of the Native Oxide of Cd xHg1−xTe

AU - Sidorov, G. Yu

AU - Shvets, V. A.

AU - Sidorov, Yu G.

AU - Varavin, V. S.

PY - 2017/11/1

Y1 - 2017/11/1

N2 - The growth of the native oxide of the CdxHg1−xTe (MCT) compound is studied by methods of laser and spectral ellipsometry. It is found that a non-absorbing oxide film is formed from the very beginning in the case of MCT oxidation with hydrogen peroxide vapors, whereas oxidation with atmospheric oxygen leads to the formation of absorbing layers on the surface at the first stages of the process. When the oxide film thickness reaches 1–2 nm, the oxidation rate drastically decreases. If MCT samples that were stored for a long time (for years) in air at room temperature are heated at T = 200 °C, the optical thickness of the oxide film decreases.

AB - The growth of the native oxide of the CdxHg1−xTe (MCT) compound is studied by methods of laser and spectral ellipsometry. It is found that a non-absorbing oxide film is formed from the very beginning in the case of MCT oxidation with hydrogen peroxide vapors, whereas oxidation with atmospheric oxygen leads to the formation of absorbing layers on the surface at the first stages of the process. When the oxide film thickness reaches 1–2 nm, the oxidation rate drastically decreases. If MCT samples that were stored for a long time (for years) in air at room temperature are heated at T = 200 °C, the optical thickness of the oxide film decreases.

KW - ellipsometry

KW - MCT

KW - native oxide

KW - SEMICONDUCTOR

UR - http://www.scopus.com/inward/record.url?scp=85042721868&partnerID=8YFLogxK

U2 - 10.3103/S8756699017060127

DO - 10.3103/S8756699017060127

M3 - Article

AN - SCOPUS:85042721868

VL - 53

SP - 617

EP - 624

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 6

ER -