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Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure. / Tyschenko, I. E.; Cherkov, A. G.

в: Semiconductors, Том 51, № 10, 01.10.2017, стр. 1364-1369.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Tyschenko, IE & Cherkov, AG 2017, 'Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure', Semiconductors, Том. 51, № 10, стр. 1364-1369. https://doi.org/10.1134/S1063782617100189

APA

Tyschenko, I. E., & Cherkov, A. G. (2017). Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure. Semiconductors, 51(10), 1364-1369. https://doi.org/10.1134/S1063782617100189

Vancouver

Tyschenko IE, Cherkov AG. Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure. Semiconductors. 2017 окт. 1;51(10):1364-1369. doi: 10.1134/S1063782617100189

Author

Tyschenko, I. E. ; Cherkov, A. G. / Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure. в: Semiconductors. 2017 ; Том 51, № 10. стр. 1364-1369.

BibTeX

@article{eeb1357fe7a141fda62df1061acf4ba2,
title = "Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure",
abstract = "The growth of Ge nanocrystals in SiO2 films is studied in relation to the dose of implanted Ge+ ions and the annealing temperature at a pressure of 12 kbar. It is established that the dependences of the nanocrystal dimensions on the content of Ge atoms and the annealing time are described by the corresponding root functions. The nanocrystal radius squared is an exponential function of the inverse temperature. The dependences correspond to the model of the diffusion-controlled mechanism of nanocrystal growth. From the temperature dependence of the nanocrystal dimensions, the diffusion coefficient of Ge in SiO2 at a pressure of 12 kbar is determined: D = 1.1 × 10–10 exp(–1.43/kT). An increase in the diffusion coefficient of Ge under pressure is attributed to the change in the activation volume of the formation and migration of point defects. Evidence in favor of the interstitial mechanism of the diffusion of Ge atoms to nanocrystal nuclei in SiO2 is reported.",
keywords = "GERMANIUM, SILICON, FILMS, SIO2",
author = "Tyschenko, {I. E.} and Cherkov, {A. G.}",
year = "2017",
month = oct,
day = "1",
doi = "10.1134/S1063782617100189",
language = "English",
volume = "51",
pages = "1364--1369",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "10",

}

RIS

TY - JOUR

T1 - Diffusion-Controlled growth of Ge nanocrystals in SiO2 films under conditions of ion synthesis at high pressure

AU - Tyschenko, I. E.

AU - Cherkov, A. G.

PY - 2017/10/1

Y1 - 2017/10/1

N2 - The growth of Ge nanocrystals in SiO2 films is studied in relation to the dose of implanted Ge+ ions and the annealing temperature at a pressure of 12 kbar. It is established that the dependences of the nanocrystal dimensions on the content of Ge atoms and the annealing time are described by the corresponding root functions. The nanocrystal radius squared is an exponential function of the inverse temperature. The dependences correspond to the model of the diffusion-controlled mechanism of nanocrystal growth. From the temperature dependence of the nanocrystal dimensions, the diffusion coefficient of Ge in SiO2 at a pressure of 12 kbar is determined: D = 1.1 × 10–10 exp(–1.43/kT). An increase in the diffusion coefficient of Ge under pressure is attributed to the change in the activation volume of the formation and migration of point defects. Evidence in favor of the interstitial mechanism of the diffusion of Ge atoms to nanocrystal nuclei in SiO2 is reported.

AB - The growth of Ge nanocrystals in SiO2 films is studied in relation to the dose of implanted Ge+ ions and the annealing temperature at a pressure of 12 kbar. It is established that the dependences of the nanocrystal dimensions on the content of Ge atoms and the annealing time are described by the corresponding root functions. The nanocrystal radius squared is an exponential function of the inverse temperature. The dependences correspond to the model of the diffusion-controlled mechanism of nanocrystal growth. From the temperature dependence of the nanocrystal dimensions, the diffusion coefficient of Ge in SiO2 at a pressure of 12 kbar is determined: D = 1.1 × 10–10 exp(–1.43/kT). An increase in the diffusion coefficient of Ge under pressure is attributed to the change in the activation volume of the formation and migration of point defects. Evidence in favor of the interstitial mechanism of the diffusion of Ge atoms to nanocrystal nuclei in SiO2 is reported.

KW - GERMANIUM

KW - SILICON

KW - FILMS

KW - SIO2

UR - http://www.scopus.com/inward/record.url?scp=85030999102&partnerID=8YFLogxK

U2 - 10.1134/S1063782617100189

DO - 10.1134/S1063782617100189

M3 - Article

AN - SCOPUS:85030999102

VL - 51

SP - 1364

EP - 1369

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 10

ER -

ID: 12949280