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Diamond crystallization from an antimony-carbon system under high pressure and temperature. / Palyanov, Yuri N.; Borzdov, Yuri M.; Kupriyanov, Igor N. и др.

в: Crystal Growth and Design, Том 15, № 5, 06.05.2015, стр. 2539-2544.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Palyanov, YN, Borzdov, YM, Kupriyanov, IN, Bataleva, YV, Khokhryakov, AF & Sokol, AG 2015, 'Diamond crystallization from an antimony-carbon system under high pressure and temperature', Crystal Growth and Design, Том. 15, № 5, стр. 2539-2544. https://doi.org/10.1021/acs.cgd.5b00310

APA

Palyanov, Y. N., Borzdov, Y. M., Kupriyanov, I. N., Bataleva, Y. V., Khokhryakov, A. F., & Sokol, A. G. (2015). Diamond crystallization from an antimony-carbon system under high pressure and temperature. Crystal Growth and Design, 15(5), 2539-2544. https://doi.org/10.1021/acs.cgd.5b00310

Vancouver

Palyanov YN, Borzdov YM, Kupriyanov IN, Bataleva YV, Khokhryakov AF, Sokol AG. Diamond crystallization from an antimony-carbon system under high pressure and temperature. Crystal Growth and Design. 2015 май 6;15(5):2539-2544. doi: 10.1021/acs.cgd.5b00310

Author

Palyanov, Yuri N. ; Borzdov, Yuri M. ; Kupriyanov, Igor N. и др. / Diamond crystallization from an antimony-carbon system under high pressure and temperature. в: Crystal Growth and Design. 2015 ; Том 15, № 5. стр. 2539-2544.

BibTeX

@article{bddb70aecf6d4b26bfcb612433a8c5a9,
title = "Diamond crystallization from an antimony-carbon system under high pressure and temperature",
abstract = "We report the results of an experimental study on diamond crystallization in the Sb-C system under HPHT conditions. The experiments were run at pressures of 6.3 and 7.5 GPa in the temperature range of 1500-1800 °C for 1 to 40 h. Diamond crystallization via spontaneous nucleation and growth on the seed crystals has been established. It is shown that the kinetic factor plays a crucial role in diamond crystallization in the Sb-C system. For run duration of 40 h the minimal P-T parameters of diamond growth on the seed crystals are found to be 6.3 GPa and 1500 °C, while the minimal parameters for spontaneous nucleation are 7.5 GPa and 1600 °C.",
author = "Palyanov, {Yuri N.} and Borzdov, {Yuri M.} and Kupriyanov, {Igor N.} and Bataleva, {Yuliya V.} and Khokhryakov, {Alexander F.} and Sokol, {Alexander G.}",
year = "2015",
month = may,
day = "6",
doi = "10.1021/acs.cgd.5b00310",
language = "English",
volume = "15",
pages = "2539--2544",
journal = "Crystal Growth and Design",
issn = "1528-7483",
publisher = "American Chemical Society",
number = "5",

}

RIS

TY - JOUR

T1 - Diamond crystallization from an antimony-carbon system under high pressure and temperature

AU - Palyanov, Yuri N.

AU - Borzdov, Yuri M.

AU - Kupriyanov, Igor N.

AU - Bataleva, Yuliya V.

AU - Khokhryakov, Alexander F.

AU - Sokol, Alexander G.

PY - 2015/5/6

Y1 - 2015/5/6

N2 - We report the results of an experimental study on diamond crystallization in the Sb-C system under HPHT conditions. The experiments were run at pressures of 6.3 and 7.5 GPa in the temperature range of 1500-1800 °C for 1 to 40 h. Diamond crystallization via spontaneous nucleation and growth on the seed crystals has been established. It is shown that the kinetic factor plays a crucial role in diamond crystallization in the Sb-C system. For run duration of 40 h the minimal P-T parameters of diamond growth on the seed crystals are found to be 6.3 GPa and 1500 °C, while the minimal parameters for spontaneous nucleation are 7.5 GPa and 1600 °C.

AB - We report the results of an experimental study on diamond crystallization in the Sb-C system under HPHT conditions. The experiments were run at pressures of 6.3 and 7.5 GPa in the temperature range of 1500-1800 °C for 1 to 40 h. Diamond crystallization via spontaneous nucleation and growth on the seed crystals has been established. It is shown that the kinetic factor plays a crucial role in diamond crystallization in the Sb-C system. For run duration of 40 h the minimal P-T parameters of diamond growth on the seed crystals are found to be 6.3 GPa and 1500 °C, while the minimal parameters for spontaneous nucleation are 7.5 GPa and 1600 °C.

UR - http://www.scopus.com/inward/record.url?scp=84929000029&partnerID=8YFLogxK

U2 - 10.1021/acs.cgd.5b00310

DO - 10.1021/acs.cgd.5b00310

M3 - Article

AN - SCOPUS:84929000029

VL - 15

SP - 2539

EP - 2544

JO - Crystal Growth and Design

JF - Crystal Growth and Design

SN - 1528-7483

IS - 5

ER -

ID: 25727511