Research output: Contribution to journal › Article › peer-review
Diamond crystallization from an antimony-carbon system under high pressure and temperature. / Palyanov, Yuri N.; Borzdov, Yuri M.; Kupriyanov, Igor N. et al.
In: Crystal Growth and Design, Vol. 15, No. 5, 06.05.2015, p. 2539-2544.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Diamond crystallization from an antimony-carbon system under high pressure and temperature
AU - Palyanov, Yuri N.
AU - Borzdov, Yuri M.
AU - Kupriyanov, Igor N.
AU - Bataleva, Yuliya V.
AU - Khokhryakov, Alexander F.
AU - Sokol, Alexander G.
PY - 2015/5/6
Y1 - 2015/5/6
N2 - We report the results of an experimental study on diamond crystallization in the Sb-C system under HPHT conditions. The experiments were run at pressures of 6.3 and 7.5 GPa in the temperature range of 1500-1800 °C for 1 to 40 h. Diamond crystallization via spontaneous nucleation and growth on the seed crystals has been established. It is shown that the kinetic factor plays a crucial role in diamond crystallization in the Sb-C system. For run duration of 40 h the minimal P-T parameters of diamond growth on the seed crystals are found to be 6.3 GPa and 1500 °C, while the minimal parameters for spontaneous nucleation are 7.5 GPa and 1600 °C.
AB - We report the results of an experimental study on diamond crystallization in the Sb-C system under HPHT conditions. The experiments were run at pressures of 6.3 and 7.5 GPa in the temperature range of 1500-1800 °C for 1 to 40 h. Diamond crystallization via spontaneous nucleation and growth on the seed crystals has been established. It is shown that the kinetic factor plays a crucial role in diamond crystallization in the Sb-C system. For run duration of 40 h the minimal P-T parameters of diamond growth on the seed crystals are found to be 6.3 GPa and 1500 °C, while the minimal parameters for spontaneous nucleation are 7.5 GPa and 1600 °C.
UR - http://www.scopus.com/inward/record.url?scp=84929000029&partnerID=8YFLogxK
U2 - 10.1021/acs.cgd.5b00310
DO - 10.1021/acs.cgd.5b00310
M3 - Article
AN - SCOPUS:84929000029
VL - 15
SP - 2539
EP - 2544
JO - Crystal Growth and Design
JF - Crystal Growth and Design
SN - 1528-7483
IS - 5
ER -
ID: 25727511