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Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN : Si epitaxial layers with x > 0.5. / Osinnykh, I. V.; Malin, T. V.; Zhuravlev, K. S.

в: Journal of Physics: Conference Series, Том 993, № 1, 012006, 10.04.2018.

Результаты исследований: Научные публикации в периодических изданиях › статья по материалам конференции › Рецензирование

Harvard

Osinnykh, IV, Malin, TV & Zhuravlev, KS 2018, 'Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN: Si epitaxial layers with x > 0.5', Journal of Physics: Conference Series, Том. 993, № 1, 012006. https://doi.org/10.1088/1742-6596/993/1/012006

APA

Osinnykh, I. V., Malin, T. V., & Zhuravlev, K. S. (2018). Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN: Si epitaxial layers with x > 0.5. Journal of Physics: Conference Series, 993(1), [012006]. https://doi.org/10.1088/1742-6596/993/1/012006

Vancouver

Osinnykh IV, Malin TV, Zhuravlev KS. Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN: Si epitaxial layers with x > 0.5. Journal of Physics: Conference Series. 2018 апр. 10;993(1):012006. doi: 10.1088/1742-6596/993/1/012006

Author

Osinnykh, I. V. ; Malin, T. V. ; Zhuravlev, K. S. / Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN : Si epitaxial layers with x > 0.5. в: Journal of Physics: Conference Series. 2018 ; Том 993, № 1.

BibTeX

@article{392bf62f289845fcaf537aad53d4c103,
title = "Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN: Si epitaxial layers with x > 0.5",
abstract = "The photoluminescence properties of the intensive defect-related emission in heavily doped AlxGal-xN:Si layers with x > 0.5 have been investigated by photoluminescence (PL) spectroscopy. The PL band in AlN was attributed to donor-acceptor (DA) transitions. At the lowest Al content, the impurity band merges with the conduction band and DA transitions are replaced by electron-acceptor transitions involving the same acceptor. The energy structure of recombination centers was obtained using the model of configuration coordinates for Al0.67Ga0.33N.",
keywords = "SI, DONORS, ALGAN, GAP",
author = "Osinnykh, {I. V.} and Malin, {T. V.} and Zhuravlev, {K. S.}",
year = "2018",
month = apr,
day = "10",
doi = "10.1088/1742-6596/993/1/012006",
language = "English",
volume = "993",
journal = "Journal of Physics: Conference Series",
issn = "1742-6588",
publisher = "IOP Publishing Ltd.",
number = "1",
note = "19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017 ; Conference date: 27-11-2017 Through 01-12-2017",

}

RIS

TY - JOUR

T1 - Determination of the energy structure of recombination centers in heavily doped AlxGa1-xN

T2 - 19th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics, RYCPS 2017

AU - Osinnykh, I. V.

AU - Malin, T. V.

AU - Zhuravlev, K. S.

PY - 2018/4/10

Y1 - 2018/4/10

N2 - The photoluminescence properties of the intensive defect-related emission in heavily doped AlxGal-xN:Si layers with x > 0.5 have been investigated by photoluminescence (PL) spectroscopy. The PL band in AlN was attributed to donor-acceptor (DA) transitions. At the lowest Al content, the impurity band merges with the conduction band and DA transitions are replaced by electron-acceptor transitions involving the same acceptor. The energy structure of recombination centers was obtained using the model of configuration coordinates for Al0.67Ga0.33N.

AB - The photoluminescence properties of the intensive defect-related emission in heavily doped AlxGal-xN:Si layers with x > 0.5 have been investigated by photoluminescence (PL) spectroscopy. The PL band in AlN was attributed to donor-acceptor (DA) transitions. At the lowest Al content, the impurity band merges with the conduction band and DA transitions are replaced by electron-acceptor transitions involving the same acceptor. The energy structure of recombination centers was obtained using the model of configuration coordinates for Al0.67Ga0.33N.

KW - SI

KW - DONORS

KW - ALGAN

KW - GAP

UR - http://www.scopus.com/inward/record.url?scp=85046105143&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/993/1/012006

DO - 10.1088/1742-6596/993/1/012006

M3 - Conference article

AN - SCOPUS:85046105143

VL - 993

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

SN - 1742-6588

IS - 1

M1 - 012006

Y2 - 27 November 2017 through 1 December 2017

ER -

ID: 12916363