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Deposition time dependence of the morphology and properties of tin-catalyzed silicon oxide nanowires synthesized by the gas-jet electron beam plasma chemical vapor deposition method. / Zamchiy, A. O.; Baranov; Khmel, S. Ya и др.
в: Thin Solid Films, Том 654, 31.05.2018, стр. 61-68.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Deposition time dependence of the morphology and properties of tin-catalyzed silicon oxide nanowires synthesized by the gas-jet electron beam plasma chemical vapor deposition method
AU - Zamchiy, A. O.
AU - Baranov,
AU - Khmel, S. Ya
AU - Maximovskiy, E. A.
AU - Gulyaev, D. V.
AU - Zhuravlev, K. S.
PY - 2018/5/31
Y1 - 2018/5/31
N2 - SiOx nanowires (SiOxNWs, x ≤ 2) were grown by gas-jet electron beam plasma chemical vapor deposition method according to the vapor-liquid-solid mechanism at different synthesis times (tdep = 0.5–5 min) using tin particles as a catalyst. Microropes of SiOxNWs were obtained at tdep of more than 1 min. The average growth rate of nanowires was about 19 nm/s. Fourier transform infrared (FTIR) spectroscopy shows that SiOxNWs synthesized at different tdep are very similar in chemical composition (x ≈ 2) and in the bonding network of SiOx. FTIR spectroscopy data on the chemical composition of nanowires are in good agreement with the results of X-ray energy dispersive spectroscopy (EDS) analysis. EDS mapping of silicon and oxygen indicates that the atoms are uniformly distributed in the nanowires. Also, FTIR measurements showed that a significant number of water-adsorbing silanol groups formed on the surface of the nanowires. Photoluminescence spectra of nanowires obtained at different tdep are typical of SiO2 and exhibit a broad band in the region 400–600 nm centered at ~475 nm. The contact angle for SiOxNWs is <21° and decreases to 4.4° with increasing tdep, indicating a superhydrophilic coating.
AB - SiOx nanowires (SiOxNWs, x ≤ 2) were grown by gas-jet electron beam plasma chemical vapor deposition method according to the vapor-liquid-solid mechanism at different synthesis times (tdep = 0.5–5 min) using tin particles as a catalyst. Microropes of SiOxNWs were obtained at tdep of more than 1 min. The average growth rate of nanowires was about 19 nm/s. Fourier transform infrared (FTIR) spectroscopy shows that SiOxNWs synthesized at different tdep are very similar in chemical composition (x ≈ 2) and in the bonding network of SiOx. FTIR spectroscopy data on the chemical composition of nanowires are in good agreement with the results of X-ray energy dispersive spectroscopy (EDS) analysis. EDS mapping of silicon and oxygen indicates that the atoms are uniformly distributed in the nanowires. Also, FTIR measurements showed that a significant number of water-adsorbing silanol groups formed on the surface of the nanowires. Photoluminescence spectra of nanowires obtained at different tdep are typical of SiO2 and exhibit a broad band in the region 400–600 nm centered at ~475 nm. The contact angle for SiOxNWs is <21° and decreases to 4.4° with increasing tdep, indicating a superhydrophilic coating.
KW - Hydrophilicity
KW - Nanowires
KW - Photoluminescence
KW - Plasma-enhanced chemical vapor deposition
KW - Silicon oxide
KW - Vapor-liquid-solid mechanism
KW - MECHANISM
KW - SIOXHY THIN-FILMS
KW - ANODES
KW - PRESSURE
KW - SPECTROSCOPY
KW - LUMINESCENCE
KW - GROWTH
KW - SURFACE
KW - ABSORPTION
KW - SIO2
UR - http://www.scopus.com/inward/record.url?scp=85047599300&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2018.03.092
DO - 10.1016/j.tsf.2018.03.092
M3 - Article
AN - SCOPUS:85047599300
VL - 654
SP - 61
EP - 68
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -
ID: 13632805