Density of states measurements for the heavy subband of holes in HgTe quantum wells

Standard

Density of states measurements for the heavy subband of holes in HgTe quantum wells. / Kuntsevich, A. Yu; Minkov, G. M.; Sherstobitov, A. A. и др.

в: Physical Review B, Том 101, № 8, 085301, 15.02.2020.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Kuntsevich, AY, Minkov, GM, Sherstobitov, AA, Tupikov, YV, Mikhailov, NN & Dvoretsky, SA 2020, 'Density of states measurements for the heavy subband of holes in HgTe quantum wells', Physical Review B, Том. 101, № 8, 085301. https://doi.org/10.1103/PhysRevB.101.085301

APA

Kuntsevich, A. Y., Minkov, G. M., Sherstobitov, A. A., Tupikov, Y. V., Mikhailov, N. N., & Dvoretsky, S. A. (2020). Density of states measurements for the heavy subband of holes in HgTe quantum wells. Physical Review B, 101(8), [085301]. https://doi.org/10.1103/PhysRevB.101.085301

Vancouver

Kuntsevich AY, Minkov GM, Sherstobitov AA, Tupikov YV, Mikhailov NN, Dvoretsky SA. Density of states measurements for the heavy subband of holes in HgTe quantum wells. Physical Review B. 2020 февр. 15;101(8):085301. doi: 10.1103/PhysRevB.101.085301

Author

Kuntsevich, A. Yu ; Minkov, G. M. ; Sherstobitov, A. A. и др. / Density of states measurements for the heavy subband of holes in HgTe quantum wells. в: Physical Review B. 2020 ; Том 101, № 8.

BibTeX

@article{f2535a1312974a12b7c0e0bf570ff661,

title = "Density of states measurements for the heavy subband of holes in HgTe quantum wells",

abstract = "A valence band in narrow HgTe quantum wells contains well-conductive Dirac-like light holes at the Γ point and a poorly conductive heavy hole subband located in the local valleys. Here we propose and employ two methods to measure the density of states for these heavy holes. The first method uses a gate-recharging technique to measure thermodynamical entropy per particle. As the Fermi level is tuned with gate voltage from a light to heavy subband, the entropy increases dramatically, and the value of this increase gives an estimate for the density of states. The second method determines the density of states for heavy holes indirectly from the gate voltage dependence of the period of the Shubnikov-de Haas oscillations for light holes. The results obtained by both methods are in reasonable agreement with each other. Our approaches can be applied to measure large effective carrier masses in other two-dimensional gated systems.",

keywords = "2-DIMENSIONAL ELECTRON-GAS, ENERGY",

author = "Kuntsevich, {A. Yu} and Minkov, {G. M.} and Sherstobitov, {A. A.} and Tupikov, {Y. V.} and Mikhailov, {N. N.} and Dvoretsky, {S. A.}",

year = "2020",

month = feb,

day = "15",

doi = "10.1103/PhysRevB.101.085301",

language = "English",

volume = "101",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society",

number = "8",

}

RIS

TY - JOUR

T1 - Density of states measurements for the heavy subband of holes in HgTe quantum wells

AU - Kuntsevich, A. Yu

AU - Minkov, G. M.

AU - Sherstobitov, A. A.

AU - Tupikov, Y. V.

AU - Mikhailov, N. N.

AU - Dvoretsky, S. A.

PY - 2020/2/15

Y1 - 2020/2/15

N2 - A valence band in narrow HgTe quantum wells contains well-conductive Dirac-like light holes at the Γ point and a poorly conductive heavy hole subband located in the local valleys. Here we propose and employ two methods to measure the density of states for these heavy holes. The first method uses a gate-recharging technique to measure thermodynamical entropy per particle. As the Fermi level is tuned with gate voltage from a light to heavy subband, the entropy increases dramatically, and the value of this increase gives an estimate for the density of states. The second method determines the density of states for heavy holes indirectly from the gate voltage dependence of the period of the Shubnikov-de Haas oscillations for light holes. The results obtained by both methods are in reasonable agreement with each other. Our approaches can be applied to measure large effective carrier masses in other two-dimensional gated systems.

AB - A valence band in narrow HgTe quantum wells contains well-conductive Dirac-like light holes at the Γ point and a poorly conductive heavy hole subband located in the local valleys. Here we propose and employ two methods to measure the density of states for these heavy holes. The first method uses a gate-recharging technique to measure thermodynamical entropy per particle. As the Fermi level is tuned with gate voltage from a light to heavy subband, the entropy increases dramatically, and the value of this increase gives an estimate for the density of states. The second method determines the density of states for heavy holes indirectly from the gate voltage dependence of the period of the Shubnikov-de Haas oscillations for light holes. The results obtained by both methods are in reasonable agreement with each other. Our approaches can be applied to measure large effective carrier masses in other two-dimensional gated systems.

KW - 2-DIMENSIONAL ELECTRON-GAS

KW - ENERGY

UR - http://www.scopus.com/inward/record.url?scp=85079746938&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.101.085301

DO - 10.1103/PhysRevB.101.085301

M3 - Article

AN - SCOPUS:85079746938

VL - 101

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 8

M1 - 085301

ER -

ID: 23616124