Crystallization of submicron amorphous hydrogenated silicon films with different hydrogen concentration by nanosecond ruby laser irradiation

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Crystallization of submicron amorphous hydrogenated silicon films with different hydrogen concentration by nanosecond ruby laser irradiation. / Krivyakin, G. K.; Kamaev, G. N.; Ivlev, G. D. и др.

в: Journal of Laser Applications, Том 31, № 1, 012006, 01.02.2019.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{f2c09875640e438d9f1a0ae4d7578ae3,

title = "Crystallization of submicron amorphous hydrogenated silicon films with different hydrogen concentration by nanosecond ruby laser irradiation",

abstract = " Pulse laser annealing remains an actual problem aimed to crystallization of amorphous films on nonrefractive substrates. But, the most previous works studied laser crystallization of relatively thin (<300 nm) a-Si:H films and mainly used excimer lasers. But, excimer lasers are not suitable for crystallization of submicron a-Si:H films due to low penetration depth in a-Si:H at such wavelengths. The problem can be resolved by using lasers with longer wavelengths. The desirable result of crystallization also depends on the choice of proper laser fluence, which is different for films with different hydrogen concentrations. In this work, the processes of a pulsed ruby laser induced crystallization of submicron (0.7 μm) amorphous hydrogenated silicon films with different hydrogen concentrations (2, 12, and 39 at. %) by different laser fluences were investigated. The films were prepared on glass substrates by plasma enhanced chemical vapor deposition technique followed by isothermal annealing in nitrogen atmosphere. The laser annealing (λ = 694 nm) was carried out at a pulse duration of 80 ns (full width at half-maximum) in the fluence range from 0.6 to 2.1 J/cm 2 . The laser fluence thresholds for surface area crystallization were found for different hydrogen concentrations in the films. The increase of hydrogen concentration leads to an increase of the threshold energy density (laser fluence) for surface area crystallization due to a decrease of light absorption in the films with a higher hydrogen concentration. Also, it was shown that ruby laser radiation can penetrate and partially crystallize the full depth of the submicron a-Si:H film, but the problem of homogeneity remains. ",

keywords = "laser crystallization, amorphous silicon, Raman scattering, electron microscopy, EXCIMER-LASER, EXPLOSIVE CRYSTALLIZATION, SOLAR-CELLS, THIN-FILMS, TEMPERATURE, GLASS",

author = "Krivyakin, {G. K.} and Kamaev, {G. N.} and Ivlev, {G. D.} and Prakopyeu, {S. L.} and Volodin, {V. A.}",

note = "Funding Information: This work was carried out according to the state research program of ISP SB RAS Project No. 0306-2016-0015. Publisher Copyright: {\textcopyright} 2019 Laser Institute of America.",

year = "2019",

month = feb,

day = "1",

doi = "10.2351/1.5030791",

language = "English",

volume = "31",

journal = "Journal of Laser Applications",

issn = "1042-346X",

publisher = "Laser Institute of America",

number = "1",

}

RIS

TY - JOUR

T1 - Crystallization of submicron amorphous hydrogenated silicon films with different hydrogen concentration by nanosecond ruby laser irradiation

AU - Krivyakin, G. K.

AU - Kamaev, G. N.

AU - Ivlev, G. D.

AU - Prakopyeu, S. L.

AU - Volodin, V. A.

PY - 2019/2/1

Y1 - 2019/2/1

N2 - Pulse laser annealing remains an actual problem aimed to crystallization of amorphous films on nonrefractive substrates. But, the most previous works studied laser crystallization of relatively thin (<300 nm) a-Si:H films and mainly used excimer lasers. But, excimer lasers are not suitable for crystallization of submicron a-Si:H films due to low penetration depth in a-Si:H at such wavelengths. The problem can be resolved by using lasers with longer wavelengths. The desirable result of crystallization also depends on the choice of proper laser fluence, which is different for films with different hydrogen concentrations. In this work, the processes of a pulsed ruby laser induced crystallization of submicron (0.7 μm) amorphous hydrogenated silicon films with different hydrogen concentrations (2, 12, and 39 at. %) by different laser fluences were investigated. The films were prepared on glass substrates by plasma enhanced chemical vapor deposition technique followed by isothermal annealing in nitrogen atmosphere. The laser annealing (λ = 694 nm) was carried out at a pulse duration of 80 ns (full width at half-maximum) in the fluence range from 0.6 to 2.1 J/cm 2 . The laser fluence thresholds for surface area crystallization were found for different hydrogen concentrations in the films. The increase of hydrogen concentration leads to an increase of the threshold energy density (laser fluence) for surface area crystallization due to a decrease of light absorption in the films with a higher hydrogen concentration. Also, it was shown that ruby laser radiation can penetrate and partially crystallize the full depth of the submicron a-Si:H film, but the problem of homogeneity remains.

AB - Pulse laser annealing remains an actual problem aimed to crystallization of amorphous films on nonrefractive substrates. But, the most previous works studied laser crystallization of relatively thin (<300 nm) a-Si:H films and mainly used excimer lasers. But, excimer lasers are not suitable for crystallization of submicron a-Si:H films due to low penetration depth in a-Si:H at such wavelengths. The problem can be resolved by using lasers with longer wavelengths. The desirable result of crystallization also depends on the choice of proper laser fluence, which is different for films with different hydrogen concentrations. In this work, the processes of a pulsed ruby laser induced crystallization of submicron (0.7 μm) amorphous hydrogenated silicon films with different hydrogen concentrations (2, 12, and 39 at. %) by different laser fluences were investigated. The films were prepared on glass substrates by plasma enhanced chemical vapor deposition technique followed by isothermal annealing in nitrogen atmosphere. The laser annealing (λ = 694 nm) was carried out at a pulse duration of 80 ns (full width at half-maximum) in the fluence range from 0.6 to 2.1 J/cm 2 . The laser fluence thresholds for surface area crystallization were found for different hydrogen concentrations in the films. The increase of hydrogen concentration leads to an increase of the threshold energy density (laser fluence) for surface area crystallization due to a decrease of light absorption in the films with a higher hydrogen concentration. Also, it was shown that ruby laser radiation can penetrate and partially crystallize the full depth of the submicron a-Si:H film, but the problem of homogeneity remains.

KW - laser crystallization

KW - amorphous silicon

KW - Raman scattering

KW - electron microscopy

KW - EXCIMER-LASER

KW - EXPLOSIVE CRYSTALLIZATION

KW - SOLAR-CELLS

KW - THIN-FILMS

KW - TEMPERATURE

KW - GLASS

UR - http://www.scopus.com/inward/record.url?scp=85061651119&partnerID=8YFLogxK

U2 - 10.2351/1.5030791

DO - 10.2351/1.5030791

M3 - Article

AN - SCOPUS:85061651119

VL - 31

JO - Journal of Laser Applications

JF - Journal of Laser Applications

SN - 1042-346X

IS - 1

M1 - 012006

ER -

ID: 18562746