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Crystallization of optically thick amorphous silicon films by near-ir femtosecond laser processing. / Mitsai, Eugeny; Dostovalov, Alexander; Bronnikov, Kirill и др.

Physics and Technology of Nanostructured Materials V - Selected full text papers from the 5th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2020. ред. / Nikolay Gennadievich Galkin. Trans Tech Publications Ltd, 2020. стр. 134-139 (Solid State Phenomena; Том 312 SSP).

Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференцийстатья в сборнике материалов конференциинаучнаяРецензирование

Harvard

Mitsai, E, Dostovalov, A, Bronnikov, K, Nepomniaschiy, A, Zhizhchenko, A & Kuchmizhak, A 2020, Crystallization of optically thick amorphous silicon films by near-ir femtosecond laser processing. в NG Galkin (ред.), Physics and Technology of Nanostructured Materials V - Selected full text papers from the 5th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2020. Solid State Phenomena, Том. 312 SSP, Trans Tech Publications Ltd, стр. 134-139, 5th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2020, Vladivostok, Российская Федерация, 30.07.2020. https://doi.org/10.4028/www.scientific.net/SSP.312.134

APA

Mitsai, E., Dostovalov, A., Bronnikov, K., Nepomniaschiy, A., Zhizhchenko, A., & Kuchmizhak, A. (2020). Crystallization of optically thick amorphous silicon films by near-ir femtosecond laser processing. в N. G. Galkin (Ред.), Physics and Technology of Nanostructured Materials V - Selected full text papers from the 5th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2020 (стр. 134-139). (Solid State Phenomena; Том 312 SSP). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.312.134

Vancouver

Mitsai E, Dostovalov A, Bronnikov K, Nepomniaschiy A, Zhizhchenko A, Kuchmizhak A. Crystallization of optically thick amorphous silicon films by near-ir femtosecond laser processing. в Galkin NG, Редактор, Physics and Technology of Nanostructured Materials V - Selected full text papers from the 5th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2020. Trans Tech Publications Ltd. 2020. стр. 134-139. (Solid State Phenomena). doi: 10.4028/www.scientific.net/SSP.312.134

Author

Mitsai, Eugeny ; Dostovalov, Alexander ; Bronnikov, Kirill и др. / Crystallization of optically thick amorphous silicon films by near-ir femtosecond laser processing. Physics and Technology of Nanostructured Materials V - Selected full text papers from the 5th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2020. Редактор / Nikolay Gennadievich Galkin. Trans Tech Publications Ltd, 2020. стр. 134-139 (Solid State Phenomena).

BibTeX

@inproceedings{6843fe50995141f0b49b9587b79ade12,
title = "Crystallization of optically thick amorphous silicon films by near-ir femtosecond laser processing",
abstract = "We demonstrated efficient crystallization of amorphous Si films induced by their direct irradiation with near-IR femtosecond laser pulses coming at sub-MHz repetition rate. Comprehensive analysis of morphology and composition of the laser-annealed film by atomic-force microscopy, Fourier-transform IR, Raman and energy dispersive X-ray spectroscopy as well as numerical modeling of optical spectra confirmed efficient crystallization of amorphous Si and high-quality of the obtained films opening pathway for applications in thin-film solar cells, transistors and displays.",
keywords = "Amorphous silicon, Femtosecond laser pulses, FTIR spectroscopy, Laser-induced annealing, Polycrystalline silicon, Raman spectroscopy, Thin films",
author = "Eugeny Mitsai and Alexander Dostovalov and Kirill Bronnikov and Alexander Nepomniaschiy and Alexey Zhizhchenko and Aleksandr Kuchmizhak",
note = "Funding Information: This work was supported by the Russian Science Foundation (Grant no. 18-79-10091) and Russian Foundation for Basic Research (project no. 19-32-90235). Publisher Copyright: {\textcopyright} 2020 Trans Tech Publications Ltd, Switzerland. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 5th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2020 ; Conference date: 30-07-2020 Through 03-08-2020",
year = "2020",
doi = "10.4028/www.scientific.net/SSP.312.134",
language = "English",
isbn = "9783035737936",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "134--139",
editor = "Galkin, {Nikolay Gennadievich}",
booktitle = "Physics and Technology of Nanostructured Materials V - Selected full text papers from the 5th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2020",

}

RIS

TY - GEN

T1 - Crystallization of optically thick amorphous silicon films by near-ir femtosecond laser processing

AU - Mitsai, Eugeny

AU - Dostovalov, Alexander

AU - Bronnikov, Kirill

AU - Nepomniaschiy, Alexander

AU - Zhizhchenko, Alexey

AU - Kuchmizhak, Aleksandr

N1 - Funding Information: This work was supported by the Russian Science Foundation (Grant no. 18-79-10091) and Russian Foundation for Basic Research (project no. 19-32-90235). Publisher Copyright: © 2020 Trans Tech Publications Ltd, Switzerland. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020

Y1 - 2020

N2 - We demonstrated efficient crystallization of amorphous Si films induced by their direct irradiation with near-IR femtosecond laser pulses coming at sub-MHz repetition rate. Comprehensive analysis of morphology and composition of the laser-annealed film by atomic-force microscopy, Fourier-transform IR, Raman and energy dispersive X-ray spectroscopy as well as numerical modeling of optical spectra confirmed efficient crystallization of amorphous Si and high-quality of the obtained films opening pathway for applications in thin-film solar cells, transistors and displays.

AB - We demonstrated efficient crystallization of amorphous Si films induced by their direct irradiation with near-IR femtosecond laser pulses coming at sub-MHz repetition rate. Comprehensive analysis of morphology and composition of the laser-annealed film by atomic-force microscopy, Fourier-transform IR, Raman and energy dispersive X-ray spectroscopy as well as numerical modeling of optical spectra confirmed efficient crystallization of amorphous Si and high-quality of the obtained films opening pathway for applications in thin-film solar cells, transistors and displays.

KW - Amorphous silicon

KW - Femtosecond laser pulses

KW - FTIR spectroscopy

KW - Laser-induced annealing

KW - Polycrystalline silicon

KW - Raman spectroscopy

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=85097597537&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/SSP.312.134

DO - 10.4028/www.scientific.net/SSP.312.134

M3 - Conference contribution

AN - SCOPUS:85097597537

SN - 9783035737936

T3 - Solid State Phenomena

SP - 134

EP - 139

BT - Physics and Technology of Nanostructured Materials V - Selected full text papers from the 5th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2020

A2 - Galkin, Nikolay Gennadievich

PB - Trans Tech Publications Ltd

T2 - 5th Asian School-Conference on Physics and Technology of Nanostructured Materials, ASCO-Nanomat 2020

Y2 - 30 July 2020 through 3 August 2020

ER -

ID: 27070647