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Crossing and anticrossing of 1D subbands in a quantum point contact with in-plane side gates. / Pokhabov, D. A.; Pogosov, A. G.; Zhdanov, E. Yu и др.

в: Applied Physics Letters, Том 118, № 1, 012104, 04.01.2021.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Pokhabov, DA, Pogosov, AG, Zhdanov, EY, Bakarov, AK & Shklyaev, AA 2021, 'Crossing and anticrossing of 1D subbands in a quantum point contact with in-plane side gates', Applied Physics Letters, Том. 118, № 1, 012104. https://doi.org/10.1063/5.0038492

APA

Pokhabov, D. A., Pogosov, A. G., Zhdanov, E. Y., Bakarov, A. K., & Shklyaev, A. A. (2021). Crossing and anticrossing of 1D subbands in a quantum point contact with in-plane side gates. Applied Physics Letters, 118(1), [012104]. https://doi.org/10.1063/5.0038492

Vancouver

Pokhabov DA, Pogosov AG, Zhdanov EY, Bakarov AK, Shklyaev AA. Crossing and anticrossing of 1D subbands in a quantum point contact with in-plane side gates. Applied Physics Letters. 2021 янв. 4;118(1):012104. doi: 10.1063/5.0038492

Author

Pokhabov, D. A. ; Pogosov, A. G. ; Zhdanov, E. Yu и др. / Crossing and anticrossing of 1D subbands in a quantum point contact with in-plane side gates. в: Applied Physics Letters. 2021 ; Том 118, № 1.

BibTeX

@article{ca88ea994fe64126adbff08efbe988fd,
title = "Crossing and anticrossing of 1D subbands in a quantum point contact with in-plane side gates",
abstract = "The conductance of a single GaAs quantum point contact (QPC) with in-plane side gates separated from a channel by lithographic trenches is experimentally studied. It is shown that, in such a trench-type QPC, the conducting channel splits into two channels, each demonstrating a conductance quantization. A phase diagram of the 1D subband population in separate channels as a function of the voltages at side gates is experimentally obtained. The obtained data show that the electron transport regime undergoes the transition from the case of two independent parallel 1D conductors to the case of strongly correlated double-row transport. The transition occurs with the increase in the number of populated 1D subbands in the channels and manifests itself in the phase diagram by the change of behavior of the lines separating the regions corresponding to different numbers. The crossings of these lines at small numbers turn into anticrossings at large numbers. The anticrossings are explained by the splitting of degenerate levels in a double-well confinement potential formed inside the QPC constriction. ",
keywords = "TRANSPORT, WIRES",
author = "Pokhabov, {D. A.} and Pogosov, {A. G.} and Zhdanov, {E. Yu} and Bakarov, {A. K.} and Shklyaev, {A. A.}",
note = "Publisher Copyright: {\textcopyright} 2021 Author(s). Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2021",
month = jan,
day = "4",
doi = "10.1063/5.0038492",
language = "English",
volume = "118",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "1",

}

RIS

TY - JOUR

T1 - Crossing and anticrossing of 1D subbands in a quantum point contact with in-plane side gates

AU - Pokhabov, D. A.

AU - Pogosov, A. G.

AU - Zhdanov, E. Yu

AU - Bakarov, A. K.

AU - Shklyaev, A. A.

N1 - Publisher Copyright: © 2021 Author(s). Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/1/4

Y1 - 2021/1/4

N2 - The conductance of a single GaAs quantum point contact (QPC) with in-plane side gates separated from a channel by lithographic trenches is experimentally studied. It is shown that, in such a trench-type QPC, the conducting channel splits into two channels, each demonstrating a conductance quantization. A phase diagram of the 1D subband population in separate channels as a function of the voltages at side gates is experimentally obtained. The obtained data show that the electron transport regime undergoes the transition from the case of two independent parallel 1D conductors to the case of strongly correlated double-row transport. The transition occurs with the increase in the number of populated 1D subbands in the channels and manifests itself in the phase diagram by the change of behavior of the lines separating the regions corresponding to different numbers. The crossings of these lines at small numbers turn into anticrossings at large numbers. The anticrossings are explained by the splitting of degenerate levels in a double-well confinement potential formed inside the QPC constriction.

AB - The conductance of a single GaAs quantum point contact (QPC) with in-plane side gates separated from a channel by lithographic trenches is experimentally studied. It is shown that, in such a trench-type QPC, the conducting channel splits into two channels, each demonstrating a conductance quantization. A phase diagram of the 1D subband population in separate channels as a function of the voltages at side gates is experimentally obtained. The obtained data show that the electron transport regime undergoes the transition from the case of two independent parallel 1D conductors to the case of strongly correlated double-row transport. The transition occurs with the increase in the number of populated 1D subbands in the channels and manifests itself in the phase diagram by the change of behavior of the lines separating the regions corresponding to different numbers. The crossings of these lines at small numbers turn into anticrossings at large numbers. The anticrossings are explained by the splitting of degenerate levels in a double-well confinement potential formed inside the QPC constriction.

KW - TRANSPORT

KW - WIRES

UR - http://www.scopus.com/inward/record.url?scp=85099196877&partnerID=8YFLogxK

U2 - 10.1063/5.0038492

DO - 10.1063/5.0038492

M3 - Article

AN - SCOPUS:85099196877

VL - 118

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 1

M1 - 012104

ER -

ID: 27450127