TY - JOUR

T1 - Critical properties and charge transport in ethylene bridged organosilica low-κ dielectrics

AU - Perevalov, Timofey

AU - Gismatulin, Andrei A.

AU - Seregin, Dmitry S.

AU - Wang, Yingjie

AU - Xu, Haoyu

AU - Kruchinin, Vladimir N.

AU - Spesivcev, Evgeniy

AU - Gritsenko, Vladimir A.

AU - Nasyrov, Kamil A.

AU - Prosvirin, Igor P.

AU - Zhang, Jing

AU - Vorotilov, Konstantin A.

AU - Baklanov, Mikhail R.

N1 - Publisher Copyright: © 2008 Systematic & Applied Acarology Society Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2020/5/21

Y1 - 2020/5/21

N2 - Organosilicate-glass-based low-κ films containing both terminal methyl groups and an ethylene bridge between the silicon atoms are spin-on deposited by using 1,2-bis(trimethoxysilyl)ethane and methyltrimethoxysilane, Brij30 template, and thermal curing. The chemical composition, porosity, and internal defects are studied using Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy, electron energy loss spectroscopy, UV induced luminescence, and ellipsometric porosimetry. It was found that the studied films contain oxygen-deficient centers (Si-Si bonds). The high defect density of the states near the valence-band edge of the studied low-κ films leads to a relatively small bandgap value of about 6.3 eV. The current-voltage characteristics at different temperatures were analyzed using six theoretical charge transport models where the transport is limited by the traps ionization. It was found that the best qualitative and quantitative agreement between the calculations and experimental data is achieved by using the model of phonon-assisted electron tunneling between the neutral traps and is supplemented by considering the space charge and charge carrier kinetics. Since the thermal and optical energies of the traps in the studied films are 1.6 eV and 3.2 eV, respectively, it is concluded that the traps are responsible for the charge transport in the Si-Si bonds.

AB - Organosilicate-glass-based low-κ films containing both terminal methyl groups and an ethylene bridge between the silicon atoms are spin-on deposited by using 1,2-bis(trimethoxysilyl)ethane and methyltrimethoxysilane, Brij30 template, and thermal curing. The chemical composition, porosity, and internal defects are studied using Fourier-transform infrared spectroscopy, x-ray photoelectron spectroscopy, electron energy loss spectroscopy, UV induced luminescence, and ellipsometric porosimetry. It was found that the studied films contain oxygen-deficient centers (Si-Si bonds). The high defect density of the states near the valence-band edge of the studied low-κ films leads to a relatively small bandgap value of about 6.3 eV. The current-voltage characteristics at different temperatures were analyzed using six theoretical charge transport models where the transport is limited by the traps ionization. It was found that the best qualitative and quantitative agreement between the calculations and experimental data is achieved by using the model of phonon-assisted electron tunneling between the neutral traps and is supplemented by considering the space charge and charge carrier kinetics. Since the thermal and optical energies of the traps in the studied films are 1.6 eV and 3.2 eV, respectively, it is concluded that the traps are responsible for the charge transport in the Si-Si bonds.

KW - OXYGEN-DEFICIENT CENTERS

KW - LOW-K

KW - OPTICAL-ABSORPTION

KW - SILICON-OXIDE

KW - THIN-FILMS

KW - CONSTANT

KW - DEFECTS

KW - DAMAGE

KW - SICOH

KW - PHOTOCONDUCTIVITY

UR - http://www.scopus.com/inward/record.url?scp=85104201153&partnerID=8YFLogxK

U2 - 10.1063/1.5145239

DO - 10.1063/1.5145239

M3 - Article

VL - 127

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 19

M1 - 195105

ER -