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Conductivity of a two-dimensional HgTe layer near the critical width : The role of developed edge states network and random mixture of p-and n-domains. / Mahmoodian, M. M.; Entin, M. V.

в: Physical Review B, Том 101, № 12, 125415, 15.03.2020.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Mahmoodian, MM & Entin, MV 2020, 'Conductivity of a two-dimensional HgTe layer near the critical width: The role of developed edge states network and random mixture of p-and n-domains', Physical Review B, Том. 101, № 12, 125415. https://doi.org/10.1103/PhysRevB.101.125415

APA

Mahmoodian, M. M., & Entin, M. V. (2020). Conductivity of a two-dimensional HgTe layer near the critical width: The role of developed edge states network and random mixture of p-and n-domains. Physical Review B, 101(12), [125415]. https://doi.org/10.1103/PhysRevB.101.125415

Vancouver

Mahmoodian MM, Entin MV. Conductivity of a two-dimensional HgTe layer near the critical width: The role of developed edge states network and random mixture of p-and n-domains. Physical Review B. 2020 март 15;101(12):125415. doi: 10.1103/PhysRevB.101.125415

Author

Mahmoodian, M. M. ; Entin, M. V. / Conductivity of a two-dimensional HgTe layer near the critical width : The role of developed edge states network and random mixture of p-and n-domains. в: Physical Review B. 2020 ; Том 101, № 12.

BibTeX

@article{10a75667921d450cbf2a877643cc36a2,
title = "Conductivity of a two-dimensional HgTe layer near the critical width: The role of developed edge states network and random mixture of p-and n-domains",
abstract = "The conductivity of a two-dimensional HgTe quantum well with a width ∼6.3nm, close to the transition from ordinary to topological insulating phases, is studied. The Fermi level is supposed to get to the overall energy gap. The consideration is based on the percolation theory. We have found that the width fluctuations convert the system to a random mixture of domains with positive and negative energy gaps with internal edge states formed near zero gap lines. In the case with no potential fluctuations, the conductance of a finite sample is provided by a random edge states network. The zero-Temperature conductivity of an infinite sample is determined by the free motion of electrons along the zero-gap lines and tunneling between them. The conductance of a single p-n junction, which is crossed by the edge state, is found. The result is applied to the situation when potential fluctuations transform the system to a mixture of p-and n-domains. It is stated that the tunneling across p-n junctions forbids the low-Temperature conductivity of a random system, but the latter is restored due to the random edge states crossing the junctions.",
keywords = "SINGLE DIRAC CONE, INSULATOR, PERCOLATION, ELECTRONS",
author = "Mahmoodian, {M. M.} and Entin, {M. V.}",
year = "2020",
month = mar,
day = "15",
doi = "10.1103/PhysRevB.101.125415",
language = "English",
volume = "101",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "12",

}

RIS

TY - JOUR

T1 - Conductivity of a two-dimensional HgTe layer near the critical width

T2 - The role of developed edge states network and random mixture of p-and n-domains

AU - Mahmoodian, M. M.

AU - Entin, M. V.

PY - 2020/3/15

Y1 - 2020/3/15

N2 - The conductivity of a two-dimensional HgTe quantum well with a width ∼6.3nm, close to the transition from ordinary to topological insulating phases, is studied. The Fermi level is supposed to get to the overall energy gap. The consideration is based on the percolation theory. We have found that the width fluctuations convert the system to a random mixture of domains with positive and negative energy gaps with internal edge states formed near zero gap lines. In the case with no potential fluctuations, the conductance of a finite sample is provided by a random edge states network. The zero-Temperature conductivity of an infinite sample is determined by the free motion of electrons along the zero-gap lines and tunneling between them. The conductance of a single p-n junction, which is crossed by the edge state, is found. The result is applied to the situation when potential fluctuations transform the system to a mixture of p-and n-domains. It is stated that the tunneling across p-n junctions forbids the low-Temperature conductivity of a random system, but the latter is restored due to the random edge states crossing the junctions.

AB - The conductivity of a two-dimensional HgTe quantum well with a width ∼6.3nm, close to the transition from ordinary to topological insulating phases, is studied. The Fermi level is supposed to get to the overall energy gap. The consideration is based on the percolation theory. We have found that the width fluctuations convert the system to a random mixture of domains with positive and negative energy gaps with internal edge states formed near zero gap lines. In the case with no potential fluctuations, the conductance of a finite sample is provided by a random edge states network. The zero-Temperature conductivity of an infinite sample is determined by the free motion of electrons along the zero-gap lines and tunneling between them. The conductance of a single p-n junction, which is crossed by the edge state, is found. The result is applied to the situation when potential fluctuations transform the system to a mixture of p-and n-domains. It is stated that the tunneling across p-n junctions forbids the low-Temperature conductivity of a random system, but the latter is restored due to the random edge states crossing the junctions.

KW - SINGLE DIRAC CONE

KW - INSULATOR

KW - PERCOLATION

KW - ELECTRONS

UR - http://www.scopus.com/inward/record.url?scp=85083319524&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.101.125415

DO - 10.1103/PhysRevB.101.125415

M3 - Article

AN - SCOPUS:85083319524

VL - 101

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 12

M1 - 125415

ER -

ID: 24160622