Standard

Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1−xO2 (0 ≤ x ≤ 1) films prepared by the ALD method. / Atuchin, V. V.; Lebedev, M. S.; Korolkov, I. V. и др.

в: Journal of Materials Science: Materials in Electronics, Том 30, № 1, 15.01.2019, стр. 812-823.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Atuchin, VV, Lebedev, MS, Korolkov, IV, Kruchinin, VN, Maksimovskii, EA & Trubin, SV 2019, 'Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1−xO2 (0 ≤ x ≤ 1) films prepared by the ALD method', Journal of Materials Science: Materials in Electronics, Том. 30, № 1, стр. 812-823. https://doi.org/10.1007/s10854-018-0351-z

APA

Atuchin, V. V., Lebedev, M. S., Korolkov, I. V., Kruchinin, V. N., Maksimovskii, E. A., & Trubin, S. V. (2019). Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1−xO2 (0 ≤ x ≤ 1) films prepared by the ALD method. Journal of Materials Science: Materials in Electronics, 30(1), 812-823. https://doi.org/10.1007/s10854-018-0351-z

Vancouver

Atuchin VV, Lebedev MS, Korolkov IV, Kruchinin VN, Maksimovskii EA, Trubin SV. Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1−xO2 (0 ≤ x ≤ 1) films prepared by the ALD method. Journal of Materials Science: Materials in Electronics. 2019 янв. 15;30(1):812-823. doi: 10.1007/s10854-018-0351-z

Author

Atuchin, V. V. ; Lebedev, M. S. ; Korolkov, I. V. и др. / Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1−xO2 (0 ≤ x ≤ 1) films prepared by the ALD method. в: Journal of Materials Science: Materials in Electronics. 2019 ; Том 30, № 1. стр. 812-823.

BibTeX

@article{171d59c589d4460db64adbdbff3effa1,
title = "Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1−xO2 (0 ≤ x ≤ 1) films prepared by the ALD method",
abstract = "The optical quality HfxTi1−xO2 films with a wide range of the Hf/Ti ratio were prepared on Si (100) substrates by the ALD method with the use of tetrakis(ethylmethylamido)hafnium(IV) (Hf(NC2H5CH3)4, TEMAH) and titanium(IV) chloride TiCl4 as Hf and Ti precursors, respectively. The H2O vapor was applied as oxygen source. The structural properties of the as-deposited and annealed films were evaluated by the XRD analysis. The Hf/Ti ratio in the films was measured by energy dispersive spectroscopy and X-ray photoelectron spectroscopy. The dispersive optical constants were obtained by spectroscopic ellipsometry over the photon energy range of E = 1.12–4.96 eV. The specific growth kinetics is observed for 0 < x < 1. The optical constants wide-range tuning is reached in the HfxTi1−xO2 (x = 0–1) films via the chemical composition variation and annealing.",
keywords = "ATOMIC LAYER DEPOSITION, RAY PHOTOELECTRON-SPECTROSCOPY, ELECTRONIC-STRUCTURE, ELECTRICAL-PROPERTIES, PROCESS TEMPERATURE, TITANIUM-DIOXIDE, TIO2 FILMS, GATE, SILICON, HFO2",
author = "Atuchin, {V. V.} and Lebedev, {M. S.} and Korolkov, {I. V.} and Kruchinin, {V. N.} and Maksimovskii, {E. A.} and Trubin, {S. V.}",
year = "2019",
month = jan,
day = "15",
doi = "10.1007/s10854-018-0351-z",
language = "English",
volume = "30",
pages = "812--823",
journal = "Journal of Materials Science: Materials in Electronics",
issn = "0957-4522",
publisher = "Springer New York",
number = "1",

}

RIS

TY - JOUR

T1 - Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1−xO2 (0 ≤ x ≤ 1) films prepared by the ALD method

AU - Atuchin, V. V.

AU - Lebedev, M. S.

AU - Korolkov, I. V.

AU - Kruchinin, V. N.

AU - Maksimovskii, E. A.

AU - Trubin, S. V.

PY - 2019/1/15

Y1 - 2019/1/15

N2 - The optical quality HfxTi1−xO2 films with a wide range of the Hf/Ti ratio were prepared on Si (100) substrates by the ALD method with the use of tetrakis(ethylmethylamido)hafnium(IV) (Hf(NC2H5CH3)4, TEMAH) and titanium(IV) chloride TiCl4 as Hf and Ti precursors, respectively. The H2O vapor was applied as oxygen source. The structural properties of the as-deposited and annealed films were evaluated by the XRD analysis. The Hf/Ti ratio in the films was measured by energy dispersive spectroscopy and X-ray photoelectron spectroscopy. The dispersive optical constants were obtained by spectroscopic ellipsometry over the photon energy range of E = 1.12–4.96 eV. The specific growth kinetics is observed for 0 < x < 1. The optical constants wide-range tuning is reached in the HfxTi1−xO2 (x = 0–1) films via the chemical composition variation and annealing.

AB - The optical quality HfxTi1−xO2 films with a wide range of the Hf/Ti ratio were prepared on Si (100) substrates by the ALD method with the use of tetrakis(ethylmethylamido)hafnium(IV) (Hf(NC2H5CH3)4, TEMAH) and titanium(IV) chloride TiCl4 as Hf and Ti precursors, respectively. The H2O vapor was applied as oxygen source. The structural properties of the as-deposited and annealed films were evaluated by the XRD analysis. The Hf/Ti ratio in the films was measured by energy dispersive spectroscopy and X-ray photoelectron spectroscopy. The dispersive optical constants were obtained by spectroscopic ellipsometry over the photon energy range of E = 1.12–4.96 eV. The specific growth kinetics is observed for 0 < x < 1. The optical constants wide-range tuning is reached in the HfxTi1−xO2 (x = 0–1) films via the chemical composition variation and annealing.

KW - ATOMIC LAYER DEPOSITION

KW - RAY PHOTOELECTRON-SPECTROSCOPY

KW - ELECTRONIC-STRUCTURE

KW - ELECTRICAL-PROPERTIES

KW - PROCESS TEMPERATURE

KW - TITANIUM-DIOXIDE

KW - TIO2 FILMS

KW - GATE

KW - SILICON

KW - HFO2

UR - http://www.scopus.com/inward/record.url?scp=85056460912&partnerID=8YFLogxK

U2 - 10.1007/s10854-018-0351-z

DO - 10.1007/s10854-018-0351-z

M3 - Article

AN - SCOPUS:85056460912

VL - 30

SP - 812

EP - 823

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - 1

ER -

ID: 17472434