Competing mechanisms of local photoluminescence quenching and enhancement in the quantum tunneling regime at 2D TMDC/hBN/plasmonic interfaces

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Competing mechanisms of local photoluminescence quenching and enhancement in the quantum tunneling regime at 2D TMDC/hBN/plasmonic interfaces. / Pan, Yang; He, Lu; Milekhin, Ilya и др.

в: Applied Physics Letters, Том 122, № 23, 233106, 05.06.2023.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

BibTeX

@article{eee68362a4f440a2be14737874fd330e,

title = "Competing mechanisms of local photoluminescence quenching and enhancement in the quantum tunneling regime at 2D TMDC/hBN/plasmonic interfaces",

abstract = "Owing to the extraordinary physical and chemical properties, and the potential to couple with nanoplasmonic structures, two-dimensional (2D) transition metal dichalcogenides are promising materials for next-generation (opto-)electronic devices. Targeting the application stage, it is essential to understand the mechanisms of photoluminescence (PL) quenching and enhancement at the nanoscale. In this work, using monolayer MoSe2/hBN heterostructure on Au nanotriangles (NTs) as an example, we report on the local PL quenching and enhancement in the quantum tunneling regime at MoSe2/hBN/plasmonic nanostructure interfaces. By exploiting tip-enhanced photoluminescence spectroscopy, we were able to resolve and image the nanostructures locally. Moreover, by studying the different near-field emission behavior of MoSe2/SiO2, MoSe2/hBN, MoSe2/NT, and MoSe2/hBN/NT, we investigate the localized surface plasmon resonance, electron tunneling, and highly localized strain as the three competing mechanisms of local PL quenching and enhancement in the quantum tunneling regime at the nanoscale.",

author = "Yang Pan and Lu He and Ilya Milekhin and Milekhin, {Alexander G.} and Zahn, {Dietrich R.T.}",

note = "The authors gratefully acknowledge the financial support by the Deutsche Forschungsgemeinschaft (DFG) for Project ZA-146/47-1. A.G.M. acknowledges the financial support from the Project RSF 22-12-00302.",

year = "2023",

month = jun,

day = "5",

doi = "10.1063/5.0152050",

language = "English",

volume = "122",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

RIS

TY - JOUR

T1 - Competing mechanisms of local photoluminescence quenching and enhancement in the quantum tunneling regime at 2D TMDC/hBN/plasmonic interfaces

AU - Pan, Yang

AU - He, Lu

AU - Milekhin, Ilya

AU - Milekhin, Alexander G.

AU - Zahn, Dietrich R.T.

N1 - The authors gratefully acknowledge the financial support by the Deutsche Forschungsgemeinschaft (DFG) for Project ZA-146/47-1. A.G.M. acknowledges the financial support from the Project RSF 22-12-00302.

PY - 2023/6/5

Y1 - 2023/6/5

N2 - Owing to the extraordinary physical and chemical properties, and the potential to couple with nanoplasmonic structures, two-dimensional (2D) transition metal dichalcogenides are promising materials for next-generation (opto-)electronic devices. Targeting the application stage, it is essential to understand the mechanisms of photoluminescence (PL) quenching and enhancement at the nanoscale. In this work, using monolayer MoSe2/hBN heterostructure on Au nanotriangles (NTs) as an example, we report on the local PL quenching and enhancement in the quantum tunneling regime at MoSe2/hBN/plasmonic nanostructure interfaces. By exploiting tip-enhanced photoluminescence spectroscopy, we were able to resolve and image the nanostructures locally. Moreover, by studying the different near-field emission behavior of MoSe2/SiO2, MoSe2/hBN, MoSe2/NT, and MoSe2/hBN/NT, we investigate the localized surface plasmon resonance, electron tunneling, and highly localized strain as the three competing mechanisms of local PL quenching and enhancement in the quantum tunneling regime at the nanoscale.

AB - Owing to the extraordinary physical and chemical properties, and the potential to couple with nanoplasmonic structures, two-dimensional (2D) transition metal dichalcogenides are promising materials for next-generation (opto-)electronic devices. Targeting the application stage, it is essential to understand the mechanisms of photoluminescence (PL) quenching and enhancement at the nanoscale. In this work, using monolayer MoSe2/hBN heterostructure on Au nanotriangles (NTs) as an example, we report on the local PL quenching and enhancement in the quantum tunneling regime at MoSe2/hBN/plasmonic nanostructure interfaces. By exploiting tip-enhanced photoluminescence spectroscopy, we were able to resolve and image the nanostructures locally. Moreover, by studying the different near-field emission behavior of MoSe2/SiO2, MoSe2/hBN, MoSe2/NT, and MoSe2/hBN/NT, we investigate the localized surface plasmon resonance, electron tunneling, and highly localized strain as the three competing mechanisms of local PL quenching and enhancement in the quantum tunneling regime at the nanoscale.

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85161861650&origin=inward&txGid=d74c915ec0f7e38c46b62b8d7b01734e

UR - https://www.mendeley.com/catalogue/203da533-49d3-3eab-b95b-7e7e1bc980be/

U2 - 10.1063/5.0152050

DO - 10.1063/5.0152050

M3 - Article

VL - 122

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 233106

ER -

ID: 59256108