Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Chemically prepared tellurium layer on PbSnTe films: passivation and oxidation properties. / Akhundov, Igor O.; Ishchenko, Denis V.; Fedosenko, Evgeniy V. и др.
в: Surfaces and Interfaces, Том 71, 106887, 15.08.2025.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Chemically prepared tellurium layer on PbSnTe films: passivation and oxidation properties
AU - Akhundov, Igor O.
AU - Ishchenko, Denis V.
AU - Fedosenko, Evgeniy V.
AU - Golyashov, Vladimir A.
AU - Shvets, Vasily A.
AU - Suprun, Sergey P.
AU - Kyrova, Ekaterina D.
AU - Mikaeva, Anastasiya S.
AU - Tereshchenko, Oleg E.
N1 - The authors acknowledge support by the state assignment of ISP SB RAS and the Ministry of Science and Higher Education of the Russian Federation within the governmental order for SRF SKIF Boreskov Institute of Catalysis ( FWUR-2024-0042 ).
PY - 2025/8/15
Y1 - 2025/8/15
N2 - Preparation of atomically clean surfaces of lead and tin chalcogenides is an important task for the development of lasers, photodetectors, thermoelectric elements, as well as a prerequisite for the study of electronic properties of the surface, including the properties of topological insulators. We proposed an alternative way to passivate the PbSnTe surface by creating a 3 nm thick tellurium layer by wet chemical treatment and investigated the oxidation process of the Te-capped PbSnTe film by X-ray photoelectron spectroscopy and ellipsometry. Two-stage oxidation with the initial formation of tin oxide and a subsequent formation of lead and tellurium oxides confirmed the mechanism of oxygen diffusion through the tellurium layer with the diffusion coefficient equal to 2·10–17 cm2s-1. The protection time of the 3 nm thick tellurium layer was >5 min, allowing samples to be loaded without the use of an inert gas glove box. In addition, further vacuum annealing yields an atomically clean and structurally ordered (111) PbSnTe surface, which makes it possible to study the surface electronic structure by ARPES.
AB - Preparation of atomically clean surfaces of lead and tin chalcogenides is an important task for the development of lasers, photodetectors, thermoelectric elements, as well as a prerequisite for the study of electronic properties of the surface, including the properties of topological insulators. We proposed an alternative way to passivate the PbSnTe surface by creating a 3 nm thick tellurium layer by wet chemical treatment and investigated the oxidation process of the Te-capped PbSnTe film by X-ray photoelectron spectroscopy and ellipsometry. Two-stage oxidation with the initial formation of tin oxide and a subsequent formation of lead and tellurium oxides confirmed the mechanism of oxygen diffusion through the tellurium layer with the diffusion coefficient equal to 2·10–17 cm2s-1. The protection time of the 3 nm thick tellurium layer was >5 min, allowing samples to be loaded without the use of an inert gas glove box. In addition, further vacuum annealing yields an atomically clean and structurally ordered (111) PbSnTe surface, which makes it possible to study the surface electronic structure by ARPES.
KW - Chalcogenides, Tellurium cap layer, Oxidation, ARPES
KW - XPS, Ellipsometry
UR - https://www.mendeley.com/catalogue/b5f21c3e-81d2-32be-b2ae-24692802fe12/
UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-105007909493&origin=inward&txGid=780bca4e39a479b06d915c93e091e95b
U2 - 10.1016/j.surfin.2025.106887
DO - 10.1016/j.surfin.2025.106887
M3 - Article
VL - 71
JO - Surfaces and Interfaces
JF - Surfaces and Interfaces
SN - 2468-0230
M1 - 106887
ER -
ID: 68031543