TY - JOUR

T1 - Charge transport mechanism in the forming-free memristor based on silicon nitride

AU - Gismatulin, Andrei A.

AU - Kamaev, Gennadiy N.

AU - Kruchinin, Vladimir N.

AU - Gritsenko, Vladimir A.

AU - Orlov, Oleg M.

AU - Chin, Albert

N1 - Funding Information: The fabrication of experimental samples and the experiments were carried out jointly on the grant by the Russian Science Foundation (Project № 18-49-08001) and by the Ministry of Science and Technology (MOST) of Taiwan (Project № 107-2923-E-009-001-MY3). The experimental data simulation was carried out with the support of the Russian Foundation for Basic Research (RFBR) (Project № 19-29-03018). The electrophysical measurements were done on the equipment of CKP "VTAN" in ATRC department of NSU. We are also grateful to V.A. Voronkovskii and D.R. Islamov for the discussions of complication in the SCLC models in the VS and HRS. Publisher Copyright: © 2021, The Author(s). Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/1/28

Y1 - 2021/1/28

N2 - Nonstoichiometric silicon nitride SiNx is a promising material for developing a new generation of high-speed, reliable flash memory device based on the resistive effect. The advantage of silicon nitride over other dielectrics is its compatibility with the silicon technology. In the present work, a silicon nitride-based memristor deposited by the plasma-enhanced chemical vapor deposition method was studied. To develop a memristor based on silicon nitride, it is necessary to understand the charge transport mechanisms in all states. In the present work, it was established that the charge transport in high-resistance states is not described by the Frenkel effect model of Coulomb isolated trap ionization, Hill–Adachi model of overlapping Coulomb potentials, Makram–Ebeid and Lannoo model of multiphonon isolated trap ionization, Nasyrov–Gritsenko model of phonon-assisted tunneling between traps, Shklovskii–Efros percolation model, Schottky model and the thermally assisted tunneling mechanisms. It is established that, in the initial state, low-resistance state, intermediate-resistance state and high-resistance state, the charge transport in the forming-free SiNx-based memristor is described by the space charge limited current model. The trap parameters responsible for the charge transport in various memristor states are determined.

AB - Nonstoichiometric silicon nitride SiNx is a promising material for developing a new generation of high-speed, reliable flash memory device based on the resistive effect. The advantage of silicon nitride over other dielectrics is its compatibility with the silicon technology. In the present work, a silicon nitride-based memristor deposited by the plasma-enhanced chemical vapor deposition method was studied. To develop a memristor based on silicon nitride, it is necessary to understand the charge transport mechanisms in all states. In the present work, it was established that the charge transport in high-resistance states is not described by the Frenkel effect model of Coulomb isolated trap ionization, Hill–Adachi model of overlapping Coulomb potentials, Makram–Ebeid and Lannoo model of multiphonon isolated trap ionization, Nasyrov–Gritsenko model of phonon-assisted tunneling between traps, Shklovskii–Efros percolation model, Schottky model and the thermally assisted tunneling mechanisms. It is established that, in the initial state, low-resistance state, intermediate-resistance state and high-resistance state, the charge transport in the forming-free SiNx-based memristor is described by the space charge limited current model. The trap parameters responsible for the charge transport in various memristor states are determined.

UR - http://www.scopus.com/inward/record.url?scp=85100038902&partnerID=8YFLogxK

U2 - 10.1038/s41598-021-82159-7

DO - 10.1038/s41598-021-82159-7

M3 - Article

C2 - 33510310

AN - SCOPUS:85100038902

VL - 11

JO - Scientific Reports

JF - Scientific Reports

SN - 2045-2322

IS - 1

M1 - 2417

ER -