Standard

Charge transport in thin hafnium and zirconium oxide films. / Islamov, D. R.; Gritsenko, V. A.; Chin, A.

в: Optoelectronics, Instrumentation and Data Processing, Том 53, № 2, 01.03.2017, стр. 184-189.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Islamov, DR, Gritsenko, VA & Chin, A 2017, 'Charge transport in thin hafnium and zirconium oxide films', Optoelectronics, Instrumentation and Data Processing, Том. 53, № 2, стр. 184-189. https://doi.org/10.3103/S8756699017020121

APA

Islamov, D. R., Gritsenko, V. A., & Chin, A. (2017). Charge transport in thin hafnium and zirconium oxide films. Optoelectronics, Instrumentation and Data Processing, 53(2), 184-189. https://doi.org/10.3103/S8756699017020121

Vancouver

Islamov DR, Gritsenko VA, Chin A. Charge transport in thin hafnium and zirconium oxide films. Optoelectronics, Instrumentation and Data Processing. 2017 март 1;53(2):184-189. doi: 10.3103/S8756699017020121

Author

Islamov, D. R. ; Gritsenko, V. A. ; Chin, A. / Charge transport in thin hafnium and zirconium oxide films. в: Optoelectronics, Instrumentation and Data Processing. 2017 ; Том 53, № 2. стр. 184-189.

BibTeX

@article{bac35ac51e484f23bda59e1ba26c4928,
title = "Charge transport in thin hafnium and zirconium oxide films",
abstract = "The mechanism of charge transport in MIS structures on the basis of thin hafnium and zirconium oxide films is studied. It is shown that transport in the studied materials is limited by phonon assisted tunneling between traps. From the comparison of experimental current-voltage characteristics of MIS structures n-Si/HfO2/Ni and n-Si/ZrO2/Ni, the estimated, thermal, and optical energies of traps are determined. It is shown that oxygen vacancies are localization centers (traps) of charge carriers in HfO2 and ZrO2.",
keywords = "amorphous films, hafnium oxide, insulator with high insulator permittivity, transport, zirconium oxide",
author = "Islamov, {D. R.} and Gritsenko, {V. A.} and A. Chin",
year = "2017",
month = mar,
day = "1",
doi = "10.3103/S8756699017020121",
language = "English",
volume = "53",
pages = "184--189",
journal = "Optoelectronics, Instrumentation and Data Processing",
issn = "8756-6990",
publisher = "Allerton Press Inc.",
number = "2",

}

RIS

TY - JOUR

T1 - Charge transport in thin hafnium and zirconium oxide films

AU - Islamov, D. R.

AU - Gritsenko, V. A.

AU - Chin, A.

PY - 2017/3/1

Y1 - 2017/3/1

N2 - The mechanism of charge transport in MIS structures on the basis of thin hafnium and zirconium oxide films is studied. It is shown that transport in the studied materials is limited by phonon assisted tunneling between traps. From the comparison of experimental current-voltage characteristics of MIS structures n-Si/HfO2/Ni and n-Si/ZrO2/Ni, the estimated, thermal, and optical energies of traps are determined. It is shown that oxygen vacancies are localization centers (traps) of charge carriers in HfO2 and ZrO2.

AB - The mechanism of charge transport in MIS structures on the basis of thin hafnium and zirconium oxide films is studied. It is shown that transport in the studied materials is limited by phonon assisted tunneling between traps. From the comparison of experimental current-voltage characteristics of MIS structures n-Si/HfO2/Ni and n-Si/ZrO2/Ni, the estimated, thermal, and optical energies of traps are determined. It is shown that oxygen vacancies are localization centers (traps) of charge carriers in HfO2 and ZrO2.

KW - amorphous films

KW - hafnium oxide

KW - insulator with high insulator permittivity

KW - transport

KW - zirconium oxide

UR - http://www.scopus.com/inward/record.url?scp=85020552410&partnerID=8YFLogxK

U2 - 10.3103/S8756699017020121

DO - 10.3103/S8756699017020121

M3 - Article

AN - SCOPUS:85020552410

VL - 53

SP - 184

EP - 189

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 2

ER -

ID: 10186165