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Charge Transport in Nonstoichiometric SiO x Obtained by Treatment of Thermal SiO2 in Hydrogen Plasma of Electronic-Cyclotron Resonance. / Iskhakzay, R. M.Kh; Kruchinin, V. N.; Aliev, V. Sh и др.

в: Russian Microelectronics, Том 51, № 1, 3, 02.2022, стр. 24-35.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Iskhakzay, RMK, Kruchinin, VN, Aliev, VS, Gritsenko, VA, Dementieva, EV & Zamoryanskaya, MV 2022, 'Charge Transport in Nonstoichiometric SiO x Obtained by Treatment of Thermal SiO2 in Hydrogen Plasma of Electronic-Cyclotron Resonance', Russian Microelectronics, Том. 51, № 1, 3, стр. 24-35. https://doi.org/10.1134/S1063739721060081

APA

Iskhakzay, R. M. K., Kruchinin, V. N., Aliev, V. S., Gritsenko, V. A., Dementieva, E. V., & Zamoryanskaya, M. V. (2022). Charge Transport in Nonstoichiometric SiO x Obtained by Treatment of Thermal SiO2 in Hydrogen Plasma of Electronic-Cyclotron Resonance. Russian Microelectronics, 51(1), 24-35. [3]. https://doi.org/10.1134/S1063739721060081

Vancouver

Iskhakzay RMK, Kruchinin VN, Aliev VS, Gritsenko VA, Dementieva EV, Zamoryanskaya MV. Charge Transport in Nonstoichiometric SiO x Obtained by Treatment of Thermal SiO2 in Hydrogen Plasma of Electronic-Cyclotron Resonance. Russian Microelectronics. 2022 февр.;51(1):24-35. 3. doi: 10.1134/S1063739721060081

Author

Iskhakzay, R. M.Kh ; Kruchinin, V. N. ; Aliev, V. Sh и др. / Charge Transport in Nonstoichiometric SiO x Obtained by Treatment of Thermal SiO2 in Hydrogen Plasma of Electronic-Cyclotron Resonance. в: Russian Microelectronics. 2022 ; Том 51, № 1. стр. 24-35.

BibTeX

@article{010f880c21a54d33897e19acf7f10efc,
title = "Charge Transport in Nonstoichiometric SiO x Obtained by Treatment of Thermal SiO2 in Hydrogen Plasma of Electronic-Cyclotron Resonance",
abstract = "Currently, a new generation of high-speed, information-intensive resistive memory based on nonstoichiometric dielectrics is being developed. The electron structure of nonstoichiometric silicon oxide SiOx is set by the value of parameter x. It is found that the treatment of thermal SiO2 in hydrogen plasma electron cyclotron resonance leads to the enrichment of silicon oxide with excess silicon, which in turn leads to the appearance of electron and hole traps in SiOx. SiOx conductivity is bipolar: electrons are injected from negatively biased silicon and holes are injected from positively biased silicon. Cathodoluminescence (CL) experiments confirm the assumption that the traps in SiOx are due to the excess silicon. p++-Si(100)/SiOx/Ni memristor metal-dielectric-semiconductor (MDS) structures are fabricated based on the developed procedure for the preparation of nonstoichiometric oxide in hydrogen plasma of electron cyclotron resonance. Such structures have the properties of resistive switching of SiOx that do not require a forming operation.",
author = "Iskhakzay, {R. M.Kh} and Kruchinin, {V. N.} and Aliev, {V. Sh} and Gritsenko, {V. A.} and Dementieva, {E. V.} and Zamoryanskaya, {M. V.}",
note = "Funding Information: The authors thank Yu.A. Zhivodkov for his help in carrying out the measurements at the Center for Shared Use {"}Nanostructures{"} RISP SB RAS. The authors thank the Center for Collective Use {"}VTAN{"} National State University for providing the measuring equipment. Funding Information: This work was supported by the Russian Science Foundation, project no. 19-19-00286, “Research and development of a formless memristor based on oxide dielectrics treated in hydrogen plasma for a new generation flash memory.” Publisher Copyright: {\textcopyright} 2022, The Author(s).",
year = "2022",
month = feb,
doi = "10.1134/S1063739721060081",
language = "English",
volume = "51",
pages = "24--35",
journal = "Russian Microelectronics",
issn = "1063-7397",
publisher = "Maik Nauka-Interperiodica Publishing",
number = "1",

}

RIS

TY - JOUR

T1 - Charge Transport in Nonstoichiometric SiO x Obtained by Treatment of Thermal SiO2 in Hydrogen Plasma of Electronic-Cyclotron Resonance

AU - Iskhakzay, R. M.Kh

AU - Kruchinin, V. N.

AU - Aliev, V. Sh

AU - Gritsenko, V. A.

AU - Dementieva, E. V.

AU - Zamoryanskaya, M. V.

N1 - Funding Information: The authors thank Yu.A. Zhivodkov for his help in carrying out the measurements at the Center for Shared Use "Nanostructures" RISP SB RAS. The authors thank the Center for Collective Use "VTAN" National State University for providing the measuring equipment. Funding Information: This work was supported by the Russian Science Foundation, project no. 19-19-00286, “Research and development of a formless memristor based on oxide dielectrics treated in hydrogen plasma for a new generation flash memory.” Publisher Copyright: © 2022, The Author(s).

PY - 2022/2

Y1 - 2022/2

N2 - Currently, a new generation of high-speed, information-intensive resistive memory based on nonstoichiometric dielectrics is being developed. The electron structure of nonstoichiometric silicon oxide SiOx is set by the value of parameter x. It is found that the treatment of thermal SiO2 in hydrogen plasma electron cyclotron resonance leads to the enrichment of silicon oxide with excess silicon, which in turn leads to the appearance of electron and hole traps in SiOx. SiOx conductivity is bipolar: electrons are injected from negatively biased silicon and holes are injected from positively biased silicon. Cathodoluminescence (CL) experiments confirm the assumption that the traps in SiOx are due to the excess silicon. p++-Si(100)/SiOx/Ni memristor metal-dielectric-semiconductor (MDS) structures are fabricated based on the developed procedure for the preparation of nonstoichiometric oxide in hydrogen plasma of electron cyclotron resonance. Such structures have the properties of resistive switching of SiOx that do not require a forming operation.

AB - Currently, a new generation of high-speed, information-intensive resistive memory based on nonstoichiometric dielectrics is being developed. The electron structure of nonstoichiometric silicon oxide SiOx is set by the value of parameter x. It is found that the treatment of thermal SiO2 in hydrogen plasma electron cyclotron resonance leads to the enrichment of silicon oxide with excess silicon, which in turn leads to the appearance of electron and hole traps in SiOx. SiOx conductivity is bipolar: electrons are injected from negatively biased silicon and holes are injected from positively biased silicon. Cathodoluminescence (CL) experiments confirm the assumption that the traps in SiOx are due to the excess silicon. p++-Si(100)/SiOx/Ni memristor metal-dielectric-semiconductor (MDS) structures are fabricated based on the developed procedure for the preparation of nonstoichiometric oxide in hydrogen plasma of electron cyclotron resonance. Such structures have the properties of resistive switching of SiOx that do not require a forming operation.

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UR - https://www.mendeley.com/catalogue/98eb4fea-9830-3814-b8af-3865357b953e/

U2 - 10.1134/S1063739721060081

DO - 10.1134/S1063739721060081

M3 - Article

AN - SCOPUS:85126554983

VL - 51

SP - 24

EP - 35

JO - Russian Microelectronics

JF - Russian Microelectronics

SN - 1063-7397

IS - 1

M1 - 3

ER -

ID: 35726674