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Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN : Si Layers Obtained by Ammonia Molecular Beam Epitaxy. / Ratnikov, V. V.; Sheglov, M. P.; Ber, B. Ya и др.

в: Semiconductors, Том 52, № 2, 01.02.2018, стр. 221-225.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Ratnikov, VV, Sheglov, MP, Ber, BY, Kazantsev, DY, Osinnykh, IV, Malin, TV & Zhuravlev, KS 2018, 'Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN: Si Layers Obtained by Ammonia Molecular Beam Epitaxy', Semiconductors, Том. 52, № 2, стр. 221-225. https://doi.org/10.1134/S1063782618020136

APA

Ratnikov, V. V., Sheglov, M. P., Ber, B. Y., Kazantsev, D. Y., Osinnykh, I. V., Malin, T. V., & Zhuravlev, K. S. (2018). Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN: Si Layers Obtained by Ammonia Molecular Beam Epitaxy. Semiconductors, 52(2), 221-225. https://doi.org/10.1134/S1063782618020136

Vancouver

Ratnikov VV, Sheglov MP, Ber BY, Kazantsev DY, Osinnykh IV, Malin TV и др. Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN: Si Layers Obtained by Ammonia Molecular Beam Epitaxy. Semiconductors. 2018 февр. 1;52(2):221-225. doi: 10.1134/S1063782618020136

Author

Ratnikov, V. V. ; Sheglov, M. P. ; Ber, B. Ya и др. / Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN : Si Layers Obtained by Ammonia Molecular Beam Epitaxy. в: Semiconductors. 2018 ; Том 52, № 2. стр. 221-225.

BibTeX

@article{799cbd5440ae4281bb0c3dc539891ac1,
title = "Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN: Si Layers Obtained by Ammonia Molecular Beam Epitaxy",
abstract = "The deformation mode and defect structure of AlxGa1 – xN:Si epitaxial layers (x = 0–0.7) grown by molecular beam epitaxy and doped with Si under a constant silane flux are studied by X-ray diffractometry. The concentration of Si atoms in the layers measured by secondary ion mass spectrometry is (4.0–8.0) × 1019 cm–3. It is found that the lateral residual stresses are compressive at x < 0.4 and become tensile at x > 0.4. The stresses after the end of growth are estimated and the contribution to the deformation mode of the layers of both the coalescence of nuclei of the growing layer and misfit stresses in the layer–buffer system are discussed. It is found that the density of vertical screw and edge dislocations are maximal at x = 0.7 and equal to 1.5 × 1010 and 8.2 × 1010 cm–2, respectively.",
keywords = "CHEMICAL-VAPOR-DEPOSITION, THIN-FILMS, GAN FILMS, SI, COALESCENCE, CRACKING",
author = "Ratnikov, {V. V.} and Sheglov, {M. P.} and Ber, {B. Ya} and Kazantsev, {D. Yu} and Osinnykh, {I. V.} and Malin, {T. V.} and Zhuravlev, {K. S.}",
year = "2018",
month = feb,
day = "1",
doi = "10.1134/S1063782618020136",
language = "English",
volume = "52",
pages = "221--225",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "2",

}

RIS

TY - JOUR

T1 - Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN

T2 - Si Layers Obtained by Ammonia Molecular Beam Epitaxy

AU - Ratnikov, V. V.

AU - Sheglov, M. P.

AU - Ber, B. Ya

AU - Kazantsev, D. Yu

AU - Osinnykh, I. V.

AU - Malin, T. V.

AU - Zhuravlev, K. S.

PY - 2018/2/1

Y1 - 2018/2/1

N2 - The deformation mode and defect structure of AlxGa1 – xN:Si epitaxial layers (x = 0–0.7) grown by molecular beam epitaxy and doped with Si under a constant silane flux are studied by X-ray diffractometry. The concentration of Si atoms in the layers measured by secondary ion mass spectrometry is (4.0–8.0) × 1019 cm–3. It is found that the lateral residual stresses are compressive at x < 0.4 and become tensile at x > 0.4. The stresses after the end of growth are estimated and the contribution to the deformation mode of the layers of both the coalescence of nuclei of the growing layer and misfit stresses in the layer–buffer system are discussed. It is found that the density of vertical screw and edge dislocations are maximal at x = 0.7 and equal to 1.5 × 1010 and 8.2 × 1010 cm–2, respectively.

AB - The deformation mode and defect structure of AlxGa1 – xN:Si epitaxial layers (x = 0–0.7) grown by molecular beam epitaxy and doped with Si under a constant silane flux are studied by X-ray diffractometry. The concentration of Si atoms in the layers measured by secondary ion mass spectrometry is (4.0–8.0) × 1019 cm–3. It is found that the lateral residual stresses are compressive at x < 0.4 and become tensile at x > 0.4. The stresses after the end of growth are estimated and the contribution to the deformation mode of the layers of both the coalescence of nuclei of the growing layer and misfit stresses in the layer–buffer system are discussed. It is found that the density of vertical screw and edge dislocations are maximal at x = 0.7 and equal to 1.5 × 1010 and 8.2 × 1010 cm–2, respectively.

KW - CHEMICAL-VAPOR-DEPOSITION

KW - THIN-FILMS

KW - GAN FILMS

KW - SI

KW - COALESCENCE

KW - CRACKING

UR - http://www.scopus.com/inward/record.url?scp=85041425683&partnerID=8YFLogxK

U2 - 10.1134/S1063782618020136

DO - 10.1134/S1063782618020136

M3 - Article

AN - SCOPUS:85041425683

VL - 52

SP - 221

EP - 225

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 2

ER -

ID: 10426937