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Carrier Recombination, Long-Wavelength Photoluminescence, and Stimulated Emission in HgCdTe Quantum Well Heterostructures. / Rumyantsev, Vladimir; Fadeev, Mikhail; Aleshkin, Vladimir и др.

в: Physica Status Solidi (B) Basic Research, Том 256, № 6, 1800546, 01.06.2019.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Rumyantsev, V, Fadeev, M, Aleshkin, V, Kulikov, N, Utochkin, V, Mikhailov, N, Dvoretskii, S, Pavlov, S, Hübers, HW, Gavrilenko, V, Sirtori, C, Krasilnik, ZF & Morozov, S 2019, 'Carrier Recombination, Long-Wavelength Photoluminescence, and Stimulated Emission in HgCdTe Quantum Well Heterostructures', Physica Status Solidi (B) Basic Research, Том. 256, № 6, 1800546. https://doi.org/10.1002/pssb.201800546

APA

Rumyantsev, V., Fadeev, M., Aleshkin, V., Kulikov, N., Utochkin, V., Mikhailov, N., Dvoretskii, S., Pavlov, S., Hübers, H. W., Gavrilenko, V., Sirtori, C., Krasilnik, Z. F., & Morozov, S. (2019). Carrier Recombination, Long-Wavelength Photoluminescence, and Stimulated Emission in HgCdTe Quantum Well Heterostructures. Physica Status Solidi (B) Basic Research, 256(6), [1800546]. https://doi.org/10.1002/pssb.201800546

Vancouver

Rumyantsev V, Fadeev M, Aleshkin V, Kulikov N, Utochkin V, Mikhailov N и др. Carrier Recombination, Long-Wavelength Photoluminescence, and Stimulated Emission in HgCdTe Quantum Well Heterostructures. Physica Status Solidi (B) Basic Research. 2019 июнь 1;256(6):1800546. doi: 10.1002/pssb.201800546

Author

Rumyantsev, Vladimir ; Fadeev, Mikhail ; Aleshkin, Vladimir и др. / Carrier Recombination, Long-Wavelength Photoluminescence, and Stimulated Emission in HgCdTe Quantum Well Heterostructures. в: Physica Status Solidi (B) Basic Research. 2019 ; Том 256, № 6.

BibTeX

@article{410ff906396c4633bf2b930c493b6736,
title = "Carrier Recombination, Long-Wavelength Photoluminescence, and Stimulated Emission in HgCdTe Quantum Well Heterostructures",
abstract = "Interband photoluminescence (PL) and stimulation emission (SE) from HgTe/HgCdTe quantum well (QW) heterostructures are studied in 5–20 µm wavelength range in regard to long-wavelength lasing applications. The authors obtain carrier lifetimes using time-resolved photoconductivity measurements and show that the dominating mechanism of carrier recombination changes from the radiative process to the non-radiative one as the bandgap is decreased, limiting the “operating” temperature for SE. The authors suggest that decreasing the QW width should reverse the balance in carrier recombination in favor of radiative processes and demonstrate 75 K improvement in the “operating” temperature in structure with narrower QW.",
keywords = "carrier recombination, HgCdTe, radiative recombination, stimulated emission, DIODE-LASERS, AUGER, HGTE/CDTE SUPERLATTICES, CASCADE LASERS, LIFETIME",
author = "Vladimir Rumyantsev and Mikhail Fadeev and Vladimir Aleshkin and Nikita Kulikov and Vladimir Utochkin and Nikolai Mikhailov and Sergey Dvoretskii and Sergey Pavlov and H{\"u}bers, {Heinz Wilhelm} and Vladimir Gavrilenko and Carlo Sirtori and Krasilnik, {Zakhary F.} and Sergey Morozov",
note = "Publisher Copyright: {\textcopyright} 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",
year = "2019",
month = jun,
day = "1",
doi = "10.1002/pssb.201800546",
language = "English",
volume = "256",
journal = "Physica Status Solidi (B): Basic Research",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "6",

}

RIS

TY - JOUR

T1 - Carrier Recombination, Long-Wavelength Photoluminescence, and Stimulated Emission in HgCdTe Quantum Well Heterostructures

AU - Rumyantsev, Vladimir

AU - Fadeev, Mikhail

AU - Aleshkin, Vladimir

AU - Kulikov, Nikita

AU - Utochkin, Vladimir

AU - Mikhailov, Nikolai

AU - Dvoretskii, Sergey

AU - Pavlov, Sergey

AU - Hübers, Heinz Wilhelm

AU - Gavrilenko, Vladimir

AU - Sirtori, Carlo

AU - Krasilnik, Zakhary F.

AU - Morozov, Sergey

N1 - Publisher Copyright: © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2019/6/1

Y1 - 2019/6/1

N2 - Interband photoluminescence (PL) and stimulation emission (SE) from HgTe/HgCdTe quantum well (QW) heterostructures are studied in 5–20 µm wavelength range in regard to long-wavelength lasing applications. The authors obtain carrier lifetimes using time-resolved photoconductivity measurements and show that the dominating mechanism of carrier recombination changes from the radiative process to the non-radiative one as the bandgap is decreased, limiting the “operating” temperature for SE. The authors suggest that decreasing the QW width should reverse the balance in carrier recombination in favor of radiative processes and demonstrate 75 K improvement in the “operating” temperature in structure with narrower QW.

AB - Interband photoluminescence (PL) and stimulation emission (SE) from HgTe/HgCdTe quantum well (QW) heterostructures are studied in 5–20 µm wavelength range in regard to long-wavelength lasing applications. The authors obtain carrier lifetimes using time-resolved photoconductivity measurements and show that the dominating mechanism of carrier recombination changes from the radiative process to the non-radiative one as the bandgap is decreased, limiting the “operating” temperature for SE. The authors suggest that decreasing the QW width should reverse the balance in carrier recombination in favor of radiative processes and demonstrate 75 K improvement in the “operating” temperature in structure with narrower QW.

KW - carrier recombination

KW - HgCdTe

KW - radiative recombination

KW - stimulated emission

KW - DIODE-LASERS

KW - AUGER

KW - HGTE/CDTE SUPERLATTICES

KW - CASCADE LASERS

KW - LIFETIME

UR - http://www.scopus.com/inward/record.url?scp=85065061774&partnerID=8YFLogxK

U2 - 10.1002/pssb.201800546

DO - 10.1002/pssb.201800546

M3 - Article

AN - SCOPUS:85065061774

VL - 256

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 6

M1 - 1800546

ER -

ID: 20162022