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Automation of Growth Rate Measurements for AlN/GaN Heteroepitaxial Structures with a Two-Dimensional Electron Gas Grown Using Ammonia Molecular Beam Epitaxy. / Lyapustin, I. N.; Mansurov, V. G.; Malin, T. V. и др.

в: Optoelectronics, Instrumentation and Data Processing, Том 61, № 4, 08.2025, стр. 511-521.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Lyapustin, IN, Mansurov, VG, Malin, TV, Gilinsky, AM, Maidebura, YE, Vdovin, VI, Zhivodkov, YA & Milakhin, DS 2025, 'Automation of Growth Rate Measurements for AlN/GaN Heteroepitaxial Structures with a Two-Dimensional Electron Gas Grown Using Ammonia Molecular Beam Epitaxy', Optoelectronics, Instrumentation and Data Processing, Том. 61, № 4, стр. 511-521. https://doi.org/10.3103/S8756699025700578

APA

Lyapustin, I. N., Mansurov, V. G., Malin, T. V., Gilinsky, A. M., Maidebura, Y. E., Vdovin, V. I., Zhivodkov, Y. A., & Milakhin, D. S. (2025). Automation of Growth Rate Measurements for AlN/GaN Heteroepitaxial Structures with a Two-Dimensional Electron Gas Grown Using Ammonia Molecular Beam Epitaxy. Optoelectronics, Instrumentation and Data Processing, 61(4), 511-521. https://doi.org/10.3103/S8756699025700578

Vancouver

Lyapustin IN, Mansurov VG, Malin TV, Gilinsky AM, Maidebura YE, Vdovin VI и др. Automation of Growth Rate Measurements for AlN/GaN Heteroepitaxial Structures with a Two-Dimensional Electron Gas Grown Using Ammonia Molecular Beam Epitaxy. Optoelectronics, Instrumentation and Data Processing. 2025 авг.;61(4):511-521. doi: 10.3103/S8756699025700578

Author

Lyapustin, I. N. ; Mansurov, V. G. ; Malin, T. V. и др. / Automation of Growth Rate Measurements for AlN/GaN Heteroepitaxial Structures with a Two-Dimensional Electron Gas Grown Using Ammonia Molecular Beam Epitaxy. в: Optoelectronics, Instrumentation and Data Processing. 2025 ; Том 61, № 4. стр. 511-521.

BibTeX

@article{8d920b8d1d0b4df2a05ee44f30faaaf7,
title = "Automation of Growth Rate Measurements for AlN/GaN Heteroepitaxial Structures with a Two-Dimensional Electron Gas Grown Using Ammonia Molecular Beam Epitaxy",
abstract = "A method compatible with the growth process has been proposed for processing reflectograms recorded in situ by a laser reflectometer during the growth of III-nitride layers by ammonia molecular beam epitaxy (MBE). This method includes data filtering based on the fast Fourier transform (FFT). The cause of an additional high-frequency signal appearing and interfering with the registration of informative interference oscillations of reflected light intensity has been established as the oscillations of the holder with the sample installed on it during growth rotation. Sample rotation is a necessary technological technique in molecular beam epitaxy growth ensuring an increased uniformity of epitaxial film parameters. Comparison of the thickness values of individual III-nitride layers, as determined by the processing of reflectograms using software, with the values determined by scanning electron microscopy technique demonstrated a good agreement between the two methods. The software has been developed that automatically filters out high-frequency signals and determines the growth rate of individual III-nitride layers grown by ammonia molecular beam epitaxy.",
keywords = "AlGaN/AlN/GaN heterostructures, FFT filtering, III-nitrides, ammonia MBE, growth rate, A3-НИТРИДЫ, АММИАЧНАЯ МЛЭ, ГЕТЕРОСТРУКТУРЫ ALGAN/ALN/GAN, СКОРОСТЬ РОСТА, ФИЛЬТРАЦИЯ НА ОСНОВЕ БЫСТРОГО ПРЕОБРАЗОВАНИЯ ФУРЬЕ",
author = "Lyapustin, {I. N.} and Mansurov, {V. G.} and Malin, {T. V.} and Gilinsky, {A. M.} and Maidebura, {Ya E.} and Vdovin, {V. I.} and Zhivodkov, {Yu A.} and Milakhin, {D. S.}",
note = "Lyapustin, I.N., Mansurov, V.G., Malin, T.V. et al. Automation of Growth Rate Measurements for AlN/GaN Heteroepitaxial Structures with a Two-Dimensional Electron Gas Grown Using Ammonia Molecular Beam Epitaxy. Optoelectron.Instrument.Proc. 61, 511–521 (2025). https://doi.org/10.3103/S8756699025700578 This work was performed within the framework of the government task, project no.  FWGW-2025-0025 {\textquoteleft}{\textquoteleft}Gallium nitride-based nanoheteroepitaxial structures for solid-state microwave and power electronics.{\textquoteright}{\textquoteright}",
year = "2025",
month = aug,
doi = "10.3103/S8756699025700578",
language = "English",
volume = "61",
pages = "511--521",
journal = "Optoelectronics, Instrumentation and Data Processing",
issn = "8756-6990",
publisher = "Allerton Press Inc.",
number = "4",

}

RIS

TY - JOUR

T1 - Automation of Growth Rate Measurements for AlN/GaN Heteroepitaxial Structures with a Two-Dimensional Electron Gas Grown Using Ammonia Molecular Beam Epitaxy

AU - Lyapustin, I. N.

AU - Mansurov, V. G.

AU - Malin, T. V.

AU - Gilinsky, A. M.

AU - Maidebura, Ya E.

AU - Vdovin, V. I.

AU - Zhivodkov, Yu A.

AU - Milakhin, D. S.

N1 - Lyapustin, I.N., Mansurov, V.G., Malin, T.V. et al. Automation of Growth Rate Measurements for AlN/GaN Heteroepitaxial Structures with a Two-Dimensional Electron Gas Grown Using Ammonia Molecular Beam Epitaxy. Optoelectron.Instrument.Proc. 61, 511–521 (2025). https://doi.org/10.3103/S8756699025700578 This work was performed within the framework of the government task, project no.  FWGW-2025-0025 ‘‘Gallium nitride-based nanoheteroepitaxial structures for solid-state microwave and power electronics.’’

PY - 2025/8

Y1 - 2025/8

N2 - A method compatible with the growth process has been proposed for processing reflectograms recorded in situ by a laser reflectometer during the growth of III-nitride layers by ammonia molecular beam epitaxy (MBE). This method includes data filtering based on the fast Fourier transform (FFT). The cause of an additional high-frequency signal appearing and interfering with the registration of informative interference oscillations of reflected light intensity has been established as the oscillations of the holder with the sample installed on it during growth rotation. Sample rotation is a necessary technological technique in molecular beam epitaxy growth ensuring an increased uniformity of epitaxial film parameters. Comparison of the thickness values of individual III-nitride layers, as determined by the processing of reflectograms using software, with the values determined by scanning electron microscopy technique demonstrated a good agreement between the two methods. The software has been developed that automatically filters out high-frequency signals and determines the growth rate of individual III-nitride layers grown by ammonia molecular beam epitaxy.

AB - A method compatible with the growth process has been proposed for processing reflectograms recorded in situ by a laser reflectometer during the growth of III-nitride layers by ammonia molecular beam epitaxy (MBE). This method includes data filtering based on the fast Fourier transform (FFT). The cause of an additional high-frequency signal appearing and interfering with the registration of informative interference oscillations of reflected light intensity has been established as the oscillations of the holder with the sample installed on it during growth rotation. Sample rotation is a necessary technological technique in molecular beam epitaxy growth ensuring an increased uniformity of epitaxial film parameters. Comparison of the thickness values of individual III-nitride layers, as determined by the processing of reflectograms using software, with the values determined by scanning electron microscopy technique demonstrated a good agreement between the two methods. The software has been developed that automatically filters out high-frequency signals and determines the growth rate of individual III-nitride layers grown by ammonia molecular beam epitaxy.

KW - AlGaN/AlN/GaN heterostructures

KW - FFT filtering

KW - III-nitrides

KW - ammonia MBE

KW - growth rate

KW - A3-НИТРИДЫ

KW - АММИАЧНАЯ МЛЭ

KW - ГЕТЕРОСТРУКТУРЫ ALGAN/ALN/GAN

KW - СКОРОСТЬ РОСТА

KW - ФИЛЬТРАЦИЯ НА ОСНОВЕ БЫСТРОГО ПРЕОБРАЗОВАНИЯ ФУРЬЕ

UR - https://www.scopus.com/pages/publications/105024077892

UR - https://elibrary.ru/item.asp?id=82860551

UR - https://www.mendeley.com/catalogue/30771b4f-f92e-3ab8-8dfa-0655ed53c860/

U2 - 10.3103/S8756699025700578

DO - 10.3103/S8756699025700578

M3 - Article

VL - 61

SP - 511

EP - 521

JO - Optoelectronics, Instrumentation and Data Processing

JF - Optoelectronics, Instrumentation and Data Processing

SN - 8756-6990

IS - 4

ER -

ID: 72579182