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Au-induced crystallization of non-stoichiometric amorphous silicon oxide initiated by nanosecond laser pulses. / Samokhvalov, F. A.; Smirnov, N. I.; Rodionov, A. A. и др.

в: Thermophysics and Aeromechanics, Том 30, № 2, 03.2023, стр. 361-365.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Samokhvalov, FA, Smirnov, NI, Rodionov, AA, Zamchiy, AO, Baranov, EA, Shukhov, YG, Fedotov, AS & Starinskiy, SV 2023, 'Au-induced crystallization of non-stoichiometric amorphous silicon oxide initiated by nanosecond laser pulses', Thermophysics and Aeromechanics, Том. 30, № 2, стр. 361-365. https://doi.org/10.1134/S0869864323020178

APA

Samokhvalov, F. A., Smirnov, N. I., Rodionov, A. A., Zamchiy, A. O., Baranov, E. A., Shukhov, Y. G., Fedotov, A. S., & Starinskiy, S. V. (2023). Au-induced crystallization of non-stoichiometric amorphous silicon oxide initiated by nanosecond laser pulses. Thermophysics and Aeromechanics, 30(2), 361-365. https://doi.org/10.1134/S0869864323020178

Vancouver

Samokhvalov FA, Smirnov NI, Rodionov AA, Zamchiy AO, Baranov EA, Shukhov YG и др. Au-induced crystallization of non-stoichiometric amorphous silicon oxide initiated by nanosecond laser pulses. Thermophysics and Aeromechanics. 2023 март;30(2):361-365. doi: 10.1134/S0869864323020178

Author

Samokhvalov, F. A. ; Smirnov, N. I. ; Rodionov, A. A. и др. / Au-induced crystallization of non-stoichiometric amorphous silicon oxide initiated by nanosecond laser pulses. в: Thermophysics and Aeromechanics. 2023 ; Том 30, № 2. стр. 361-365.

BibTeX

@article{4aaa0cbdf73c491390366388cf46a480,
title = "Au-induced crystallization of non-stoichiometric amorphous silicon oxide initiated by nanosecond laser pulses",
abstract = "Thin films of polycrystalline silicon are widely used in semiconductor industry. One of the methods for obtaining such structures on cheap and low-melting substrates is metal-induced crystallization, since the use of a metal (for example, Au) as a catalyst during crystallization of an amorphous semiconductor allows a considerable reduction of annealing temperature. However, the typical duration of metal-induced crystallization is several tens of hours, in contrast to the method of laser-induced crystallization. In the present work, we for the first time propose to combine the advantages of the laser-induced and Au-induced crystallization methods. We have identified laser-processing modes of thin films of non-stoichiometric silicon oxide (a-SiO0.1) using nanosecond radiation with a wavelength in the infrared range which ensure the formation of polycrystalline silicon.",
keywords = "Au-induced crystallization, laser annealing, non-stoichiometric silicon oxide",
author = "Samokhvalov, {F. A.} and Smirnov, {N. I.} and Rodionov, {A. A.} and Zamchiy, {A. O.} and Baranov, {E. A.} and Shukhov, {Yu G.} and Fedotov, {A. S.} and Starinskiy, {S. V.}",
note = "The laser-annealing study was carried out under the financial support from the Russian Foundation for Basic Research and BRFBR (Grant No. 20-58-04021); the synthesis of Au films and the study of their properties were supported by the Russian Science Foundation (Grant No. 22-79-10079, https://rscf.ru/project/22-79-10079/ ). Публикация для корректировки.",
year = "2023",
month = mar,
doi = "10.1134/S0869864323020178",
language = "English",
volume = "30",
pages = "361--365",
journal = "Thermophysics and Aeromechanics",
issn = "0869-8643",
publisher = "PLEIADES PUBLISHING INC",
number = "2",

}

RIS

TY - JOUR

T1 - Au-induced crystallization of non-stoichiometric amorphous silicon oxide initiated by nanosecond laser pulses

AU - Samokhvalov, F. A.

AU - Smirnov, N. I.

AU - Rodionov, A. A.

AU - Zamchiy, A. O.

AU - Baranov, E. A.

AU - Shukhov, Yu G.

AU - Fedotov, A. S.

AU - Starinskiy, S. V.

N1 - The laser-annealing study was carried out under the financial support from the Russian Foundation for Basic Research and BRFBR (Grant No. 20-58-04021); the synthesis of Au films and the study of their properties were supported by the Russian Science Foundation (Grant No. 22-79-10079, https://rscf.ru/project/22-79-10079/ ). Публикация для корректировки.

PY - 2023/3

Y1 - 2023/3

N2 - Thin films of polycrystalline silicon are widely used in semiconductor industry. One of the methods for obtaining such structures on cheap and low-melting substrates is metal-induced crystallization, since the use of a metal (for example, Au) as a catalyst during crystallization of an amorphous semiconductor allows a considerable reduction of annealing temperature. However, the typical duration of metal-induced crystallization is several tens of hours, in contrast to the method of laser-induced crystallization. In the present work, we for the first time propose to combine the advantages of the laser-induced and Au-induced crystallization methods. We have identified laser-processing modes of thin films of non-stoichiometric silicon oxide (a-SiO0.1) using nanosecond radiation with a wavelength in the infrared range which ensure the formation of polycrystalline silicon.

AB - Thin films of polycrystalline silicon are widely used in semiconductor industry. One of the methods for obtaining such structures on cheap and low-melting substrates is metal-induced crystallization, since the use of a metal (for example, Au) as a catalyst during crystallization of an amorphous semiconductor allows a considerable reduction of annealing temperature. However, the typical duration of metal-induced crystallization is several tens of hours, in contrast to the method of laser-induced crystallization. In the present work, we for the first time propose to combine the advantages of the laser-induced and Au-induced crystallization methods. We have identified laser-processing modes of thin films of non-stoichiometric silicon oxide (a-SiO0.1) using nanosecond radiation with a wavelength in the infrared range which ensure the formation of polycrystalline silicon.

KW - Au-induced crystallization

KW - laser annealing

KW - non-stoichiometric silicon oxide

UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85168410254&origin=inward&txGid=371502fe992361bdc0d52fc147edc79c

UR - https://www.mendeley.com/catalogue/8977f358-7cb5-3896-b6d4-312ce1fed9c5/

U2 - 10.1134/S0869864323020178

DO - 10.1134/S0869864323020178

M3 - Article

VL - 30

SP - 361

EP - 365

JO - Thermophysics and Aeromechanics

JF - Thermophysics and Aeromechanics

SN - 0869-8643

IS - 2

ER -

ID: 59654765