Research output: Contribution to journal › Article › peer-review
Au-induced crystallization of non-stoichiometric amorphous silicon oxide initiated by nanosecond laser pulses. / Samokhvalov, F. A.; Smirnov, N. I.; Rodionov, A. A. et al.
In: Thermophysics and Aeromechanics, Vol. 30, No. 2, 03.2023, p. 361-365.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Au-induced crystallization of non-stoichiometric amorphous silicon oxide initiated by nanosecond laser pulses
AU - Samokhvalov, F. A.
AU - Smirnov, N. I.
AU - Rodionov, A. A.
AU - Zamchiy, A. O.
AU - Baranov, E. A.
AU - Shukhov, Yu G.
AU - Fedotov, A. S.
AU - Starinskiy, S. V.
N1 - The laser-annealing study was carried out under the financial support from the Russian Foundation for Basic Research and BRFBR (Grant No. 20-58-04021); the synthesis of Au films and the study of their properties were supported by the Russian Science Foundation (Grant No. 22-79-10079, https://rscf.ru/project/22-79-10079/ ). Публикация для корректировки.
PY - 2023/3
Y1 - 2023/3
N2 - Thin films of polycrystalline silicon are widely used in semiconductor industry. One of the methods for obtaining such structures on cheap and low-melting substrates is metal-induced crystallization, since the use of a metal (for example, Au) as a catalyst during crystallization of an amorphous semiconductor allows a considerable reduction of annealing temperature. However, the typical duration of metal-induced crystallization is several tens of hours, in contrast to the method of laser-induced crystallization. In the present work, we for the first time propose to combine the advantages of the laser-induced and Au-induced crystallization methods. We have identified laser-processing modes of thin films of non-stoichiometric silicon oxide (a-SiO0.1) using nanosecond radiation with a wavelength in the infrared range which ensure the formation of polycrystalline silicon.
AB - Thin films of polycrystalline silicon are widely used in semiconductor industry. One of the methods for obtaining such structures on cheap and low-melting substrates is metal-induced crystallization, since the use of a metal (for example, Au) as a catalyst during crystallization of an amorphous semiconductor allows a considerable reduction of annealing temperature. However, the typical duration of metal-induced crystallization is several tens of hours, in contrast to the method of laser-induced crystallization. In the present work, we for the first time propose to combine the advantages of the laser-induced and Au-induced crystallization methods. We have identified laser-processing modes of thin films of non-stoichiometric silicon oxide (a-SiO0.1) using nanosecond radiation with a wavelength in the infrared range which ensure the formation of polycrystalline silicon.
KW - Au-induced crystallization
KW - laser annealing
KW - non-stoichiometric silicon oxide
UR - https://www.scopus.com/record/display.uri?eid=2-s2.0-85168410254&origin=inward&txGid=371502fe992361bdc0d52fc147edc79c
UR - https://www.mendeley.com/catalogue/8977f358-7cb5-3896-b6d4-312ce1fed9c5/
U2 - 10.1134/S0869864323020178
DO - 10.1134/S0869864323020178
M3 - Article
VL - 30
SP - 361
EP - 365
JO - Thermophysics and Aeromechanics
JF - Thermophysics and Aeromechanics
SN - 0869-8643
IS - 2
ER -
ID: 59654765