TY - JOUR

T1 - Atomic Structure and Optical Properties of Plasma Enhanced Chemical Vapor Deposited SiCOH Low-k Dielectric Film

AU - Kruchinin, V. N.

AU - Volodin, V. A.

AU - Rykhlitskii, S. V.

AU - Gritsenko, V. A.

AU - Posvirin, I. P.

AU - Shi, Xiaoping

AU - Baklanov, M. R.

N1 - Funding Information: This work was supported by the Russian Foundation for Basic Research, project no. 18-29-27006. The Raman spectra were registered using the equipment of Center of collective usage “VTAN” in ATRC department of NSU. Publisher Copyright: © 2021, Pleiades Publishing, Ltd.

PY - 2021/6

Y1 - 2021/6

N2 - The SiCOH low-k dielectric film was grown on Si substrate using plasma-enhanced chemical vapor deposition method. Atomic structure and optical properties of the film were studied with the use of X‑ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) absorption spectroscopy, Raman spectroscopy, and ellipsometry. Analysis of XPS data showed that the low-k dielectric film consists of Si–O4 bonds (83%) and Si–SiO3 bonds (17%). In FTIR spectra some red-shift of Si–O–Si valence (stretching) vibration mode frequency was observed in the low-k dielectric film compared with the frequency of this mode in thermally grown SiO2 film. The peaks related to absorbance by C–H bonds were observed in FTIR spectrum. According to Raman spectroscopy data, the film contained local Si–Si bonds and also C‒C bonds in the s–p3 and s–p2 hybridized forms. Scanning laser ellipsometry data show that the film is quite homogeneous, homogeneity of thickness is ~2.5%, and homogeneity of refractive index is ~2%. According to the analysis of spectral ellipsometry data, the film is porous (porosity is about 24%) and contains clusters of amorphous carbon (~7%).

AB - The SiCOH low-k dielectric film was grown on Si substrate using plasma-enhanced chemical vapor deposition method. Atomic structure and optical properties of the film were studied with the use of X‑ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) absorption spectroscopy, Raman spectroscopy, and ellipsometry. Analysis of XPS data showed that the low-k dielectric film consists of Si–O4 bonds (83%) and Si–SiO3 bonds (17%). In FTIR spectra some red-shift of Si–O–Si valence (stretching) vibration mode frequency was observed in the low-k dielectric film compared with the frequency of this mode in thermally grown SiO2 film. The peaks related to absorbance by C–H bonds were observed in FTIR spectrum. According to Raman spectroscopy data, the film contained local Si–Si bonds and also C‒C bonds in the s–p3 and s–p2 hybridized forms. Scanning laser ellipsometry data show that the film is quite homogeneous, homogeneity of thickness is ~2.5%, and homogeneity of refractive index is ~2%. According to the analysis of spectral ellipsometry data, the film is porous (porosity is about 24%) and contains clusters of amorphous carbon (~7%).

KW - atomic structure

KW - low-k dielectrics

KW - optical properties

KW - PECVD

UR - http://www.scopus.com/inward/record.url?scp=85121644613&partnerID=8YFLogxK

UR - https://www.elibrary.ru/item.asp?id=47548361

UR - https://www.mendeley.com/catalogue/935453a1-103a-3323-83fd-3256f2a0ae27/

U2 - 10.1134/S0030400X21050088

DO - 10.1134/S0030400X21050088

M3 - Article

AN - SCOPUS:85121644613

VL - 129

SP - 645

EP - 651

JO - Optics and Spectroscopy (English translation of Optika i Spektroskopiya)

JF - Optics and Spectroscopy (English translation of Optika i Spektroskopiya)

SN - 0030-400X

IS - 6

ER -