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Atomic Structure and Optical Properties of CaSi2 Layers Grown on CaF2/Si Substrates. / Zinovyev, V. A.; Kacyuba, A. V.; Volodin, V. A. и др.

в: Semiconductors, Том 55, № 10, 10.2021, стр. 808-811.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Zinovyev, VA, Kacyuba, AV, Volodin, VA, Zinovieva, AF, Cherkova, SG, Smagina, ZV, Dvurechenskii, AV, Krupin, AY, Borodavchenko, OM, Zhivulko, VD & Mudryi, AV 2021, 'Atomic Structure and Optical Properties of CaSi2 Layers Grown on CaF2/Si Substrates', Semiconductors, Том. 55, № 10, стр. 808-811. https://doi.org/10.1134/S1063782621090268

APA

Zinovyev, V. A., Kacyuba, A. V., Volodin, V. A., Zinovieva, A. F., Cherkova, S. G., Smagina, Z. V., Dvurechenskii, A. V., Krupin, A. Y., Borodavchenko, O. M., Zhivulko, V. D., & Mudryi, A. V. (2021). Atomic Structure and Optical Properties of CaSi2 Layers Grown on CaF2/Si Substrates. Semiconductors, 55(10), 808-811. https://doi.org/10.1134/S1063782621090268

Vancouver

Zinovyev VA, Kacyuba AV, Volodin VA, Zinovieva AF, Cherkova SG, Smagina ZV и др. Atomic Structure and Optical Properties of CaSi2 Layers Grown on CaF2/Si Substrates. Semiconductors. 2021 окт.;55(10):808-811. doi: 10.1134/S1063782621090268

Author

Zinovyev, V. A. ; Kacyuba, A. V. ; Volodin, V. A. и др. / Atomic Structure and Optical Properties of CaSi2 Layers Grown on CaF2/Si Substrates. в: Semiconductors. 2021 ; Том 55, № 10. стр. 808-811.

BibTeX

@article{3afb1fc2c9a74ee8aaf00067bdfbb420,
title = "Atomic Structure and Optical Properties of CaSi2 Layers Grown on CaF2/Si Substrates",
abstract = "The specific features of growth and the structural and optical properties of GaSi2 layers formed by the successive deposition of Si and CaF2 onto a Si(111) substrate with simultaneous irradiation with a high-energy electron beam are studied. The Raman spectra recorded for the electron-beam-irradiated regions exhibit peaks characteristic of CaSi2 crystal layers. Studies of the surface morphology of the structures formed show that, under the conditions of synthesis chosen, the formation of CaSi2 layers upon electron irradiation proceeds by a two-dimensional layer mechanism. The photoluminescence spectra recorded for the regions modified by the electron beam greatly differ from the spectra recorded outside these regions.",
keywords = "atomic structure, calcium fluoride, calcium silicides, electron irradiation, molecular-beam epitaxy, photoluminescence",
author = "Zinovyev, {V. A.} and Kacyuba, {A. V.} and Volodin, {V. A.} and Zinovieva, {A. F.} and Cherkova, {S. G.} and Smagina, {Zh V.} and Dvurechenskii, {A. V.} and Krupin, {A. Y.} and Borodavchenko, {O. M.} and Zhivulko, {V. D.} and Mudryi, {A. V.}",
note = "Funding Information: The study was supported by the Russian Foundation for Basic Research, project no. 20-52-00016, and the Belarussian Republican Foundation for Fundamental Research, project no. F20R-082. Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",
year = "2021",
month = oct,
doi = "10.1134/S1063782621090268",
language = "English",
volume = "55",
pages = "808--811",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "10",

}

RIS

TY - JOUR

T1 - Atomic Structure and Optical Properties of CaSi2 Layers Grown on CaF2/Si Substrates

AU - Zinovyev, V. A.

AU - Kacyuba, A. V.

AU - Volodin, V. A.

AU - Zinovieva, A. F.

AU - Cherkova, S. G.

AU - Smagina, Zh V.

AU - Dvurechenskii, A. V.

AU - Krupin, A. Y.

AU - Borodavchenko, O. M.

AU - Zhivulko, V. D.

AU - Mudryi, A. V.

N1 - Funding Information: The study was supported by the Russian Foundation for Basic Research, project no. 20-52-00016, and the Belarussian Republican Foundation for Fundamental Research, project no. F20R-082. Publisher Copyright: © 2021, Pleiades Publishing, Ltd.

PY - 2021/10

Y1 - 2021/10

N2 - The specific features of growth and the structural and optical properties of GaSi2 layers formed by the successive deposition of Si and CaF2 onto a Si(111) substrate with simultaneous irradiation with a high-energy electron beam are studied. The Raman spectra recorded for the electron-beam-irradiated regions exhibit peaks characteristic of CaSi2 crystal layers. Studies of the surface morphology of the structures formed show that, under the conditions of synthesis chosen, the formation of CaSi2 layers upon electron irradiation proceeds by a two-dimensional layer mechanism. The photoluminescence spectra recorded for the regions modified by the electron beam greatly differ from the spectra recorded outside these regions.

AB - The specific features of growth and the structural and optical properties of GaSi2 layers formed by the successive deposition of Si and CaF2 onto a Si(111) substrate with simultaneous irradiation with a high-energy electron beam are studied. The Raman spectra recorded for the electron-beam-irradiated regions exhibit peaks characteristic of CaSi2 crystal layers. Studies of the surface morphology of the structures formed show that, under the conditions of synthesis chosen, the formation of CaSi2 layers upon electron irradiation proceeds by a two-dimensional layer mechanism. The photoluminescence spectra recorded for the regions modified by the electron beam greatly differ from the spectra recorded outside these regions.

KW - atomic structure

KW - calcium fluoride

KW - calcium silicides

KW - electron irradiation

KW - molecular-beam epitaxy

KW - photoluminescence

UR - http://www.scopus.com/inward/record.url?scp=85124723193&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/335f5a23-60b0-3602-89c3-5ad208e92e9b/

U2 - 10.1134/S1063782621090268

DO - 10.1134/S1063782621090268

M3 - Article

AN - SCOPUS:85124723193

VL - 55

SP - 808

EP - 811

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 10

ER -

ID: 35532626