Atomic and Electronic Structures of a-SiN x:H › Обзор исследований

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Atomic and Electronic Structures of a-SiN_x:H. / Gritsenko, V. A.; Kruchinin, V. N.; Prosvirin, I. P. и др.

в: Journal of Experimental and Theoretical Physics, Том 129, № 5, 01.11.2019, стр. 924-934.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Gritsenko, VA, Kruchinin, VN, Prosvirin, IP, Novikov, YN, Chin, A & Volodin, VA 2019, 'Atomic and Electronic Structures of a-SiN_x:H', Journal of Experimental and Theoretical Physics, Том. 129, № 5, стр. 924-934. https://doi.org/10.1134/S1063776119080132

APA

Gritsenko, V. A., Kruchinin, V. N., Prosvirin, I. P., Novikov, Y. N., Chin, A., & Volodin, V. A. (2019). Atomic and Electronic Structures of a-SiN_x:H. Journal of Experimental and Theoretical Physics, 129(5), 924-934. https://doi.org/10.1134/S1063776119080132

Vancouver

Gritsenko VA, Kruchinin VN, Prosvirin IP, Novikov YN, Chin A, Volodin VA. Atomic and Electronic Structures of a-SiN_x:H. Journal of Experimental and Theoretical Physics. 2019 нояб. 1;129(5):924-934. doi: 10.1134/S1063776119080132

Author

Gritsenko, V. A. ; Kruchinin, V. N. ; Prosvirin, I. P. и др. / Atomic and Electronic Structures of a-SiN_x:H. в: Journal of Experimental and Theoretical Physics. 2019 ; Том 129, № 5. стр. 924-934.

BibTeX

@article{8603978537dd42888e90b472fd696e87,

title = "Atomic and Electronic Structures of a-SiN x:H",

abstract = "The atomic structure and the electronic spectrum of a-SiNx:H films, which are grown by plasmachemical deposition with varied ammonia and monosilane flow rates, are studied. As a result of varied flow rates, stoichiometric parameter x is changed over wide limits, from 0.73 to 1.33. The films are analyzed by structural and optical techniques to determine stoichiometric parameter x and its influence on the valence band top and the band gap in the density of states. The experimental and calculated electronic structure parameters of a-SiNx are compared, and good agreement between them is achieved over wide film composition (parameter x) limits. The experimental data obtained can be used to simulate the electron transport characteristics in nonstoichiometric silicon nitride films, which is important for creating memristors based on them.",

author = "Gritsenko, {V. A.} and Kruchinin, {V. N.} and Prosvirin, {I. P.} and Novikov, {Yu N.} and A. Chin and Volodin, {V. A.}",

year = "2019",

month = nov,

day = "1",

doi = "10.1134/S1063776119080132",

language = "English",

volume = "129",

pages = "924--934",

journal = "Journal of Experimental and Theoretical Physics",

issn = "1063-7761",

publisher = "Maik Nauka-Interperiodica Publishing",

number = "5",

}

RIS

TY - JOUR

T1 - Atomic and Electronic Structures of a-SiN x:H

AU - Gritsenko, V. A.

AU - Kruchinin, V. N.

AU - Prosvirin, I. P.

AU - Novikov, Yu N.

AU - Chin, A.

AU - Volodin, V. A.

PY - 2019/11/1

Y1 - 2019/11/1

N2 - The atomic structure and the electronic spectrum of a-SiNx:H films, which are grown by plasmachemical deposition with varied ammonia and monosilane flow rates, are studied. As a result of varied flow rates, stoichiometric parameter x is changed over wide limits, from 0.73 to 1.33. The films are analyzed by structural and optical techniques to determine stoichiometric parameter x and its influence on the valence band top and the band gap in the density of states. The experimental and calculated electronic structure parameters of a-SiNx are compared, and good agreement between them is achieved over wide film composition (parameter x) limits. The experimental data obtained can be used to simulate the electron transport characteristics in nonstoichiometric silicon nitride films, which is important for creating memristors based on them.

AB - The atomic structure and the electronic spectrum of a-SiNx:H films, which are grown by plasmachemical deposition with varied ammonia and monosilane flow rates, are studied. As a result of varied flow rates, stoichiometric parameter x is changed over wide limits, from 0.73 to 1.33. The films are analyzed by structural and optical techniques to determine stoichiometric parameter x and its influence on the valence band top and the band gap in the density of states. The experimental and calculated electronic structure parameters of a-SiNx are compared, and good agreement between them is achieved over wide film composition (parameter x) limits. The experimental data obtained can be used to simulate the electron transport characteristics in nonstoichiometric silicon nitride films, which is important for creating memristors based on them.

UR - http://www.scopus.com/inward/record.url?scp=85077035845&partnerID=8YFLogxK

U2 - 10.1134/S1063776119080132

DO - 10.1134/S1063776119080132

M3 - Article

AN - SCOPUS:85077035845

VL - 129

SP - 924

EP - 934

JO - Journal of Experimental and Theoretical Physics

JF - Journal of Experimental and Theoretical Physics

SN - 1063-7761

IS - 5

ER -

ID: 22837716