Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
AC and DC Conductivities in an n-GaAs/AlAs Heterostructure with a Wide Quantum Well in the Integer Quantum Hall Effect Regime. / Dmitriev, A. A.; Drichko, I. L.; Smirnov, I. Yu и др.
в: JETP Letters, Том 110, № 1, 01.07.2019, стр. 68-73.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - AC and DC Conductivities in an n-GaAs/AlAs Heterostructure with a Wide Quantum Well in the Integer Quantum Hall Effect Regime
AU - Dmitriev, A. A.
AU - Drichko, I. L.
AU - Smirnov, I. Yu
AU - Bakarov, A. K.
AU - Bykov, A. A.
PY - 2019/7/1
Y1 - 2019/7/1
N2 - The direct-current (dc) σxxdc and alternating-current (ac) σxxac=σ1−iσ2 conductivities of a wide (46 nm) GaAs quantum well with the bilayer electron density distribution are measured. It is found that the magnetic field dependence of σxx exhibits three sets of oscillations related to the transitions between Landau levels in symmetric and antisymmetric subbands and with the transitions occurring owing to the Zeeman splitting of these subbands. The analysis of the frequency dependence of the ac conductivity and the σ1/σ2 ratio demonstrates that the conductivity at the minima of oscillations is determined by the hopping mechanism.
AB - The direct-current (dc) σxxdc and alternating-current (ac) σxxac=σ1−iσ2 conductivities of a wide (46 nm) GaAs quantum well with the bilayer electron density distribution are measured. It is found that the magnetic field dependence of σxx exhibits three sets of oscillations related to the transitions between Landau levels in symmetric and antisymmetric subbands and with the transitions occurring owing to the Zeeman splitting of these subbands. The analysis of the frequency dependence of the ac conductivity and the σ1/σ2 ratio demonstrates that the conductivity at the minima of oscillations is determined by the hopping mechanism.
KW - OSCILLATIONS
KW - DEPENDENCE
KW - SCATTERING
UR - http://www.scopus.com/inward/record.url?scp=85071854533&partnerID=8YFLogxK
U2 - 10.1134/S0021364019130095
DO - 10.1134/S0021364019130095
M3 - Article
AN - SCOPUS:85071854533
VL - 110
SP - 68
EP - 73
JO - JETP Letters
JF - JETP Letters
SN - 0021-3640
IS - 1
ER -
ID: 21465647