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AC and DC Conductivities in an n-GaAs/AlAs Heterostructure with a Wide Quantum Well in the Integer Quantum Hall Effect Regime. / Dmitriev, A. A.; Drichko, I. L.; Smirnov, I. Yu et al.

In: JETP Letters, Vol. 110, No. 1, 01.07.2019, p. 68-73.

Research output: Contribution to journal › Article › peer-review

Harvard

Dmitriev, AA, Drichko, IL, Smirnov, IY, Bakarov, AK & Bykov, AA 2019, 'AC and DC Conductivities in an n-GaAs/AlAs Heterostructure with a Wide Quantum Well in the Integer Quantum Hall Effect Regime', JETP Letters, vol. 110, no. 1, pp. 68-73. https://doi.org/10.1134/S0021364019130095

APA

Dmitriev, A. A., Drichko, I. L., Smirnov, I. Y., Bakarov, A. K., & Bykov, A. A. (2019). AC and DC Conductivities in an n-GaAs/AlAs Heterostructure with a Wide Quantum Well in the Integer Quantum Hall Effect Regime. JETP Letters, 110(1), 68-73. https://doi.org/10.1134/S0021364019130095

Vancouver

Dmitriev AA, Drichko IL, Smirnov IY, Bakarov AK, Bykov AA. AC and DC Conductivities in an n-GaAs/AlAs Heterostructure with a Wide Quantum Well in the Integer Quantum Hall Effect Regime. JETP Letters. 2019 Jul 1;110(1):68-73. doi: 10.1134/S0021364019130095

Author

Dmitriev, A. A. ; Drichko, I. L. ; Smirnov, I. Yu et al. / AC and DC Conductivities in an n-GaAs/AlAs Heterostructure with a Wide Quantum Well in the Integer Quantum Hall Effect Regime. In: JETP Letters. 2019 ; Vol. 110, No. 1. pp. 68-73.

BibTeX

@article{5fb8e2445c9c41958dad303b38c4325a,
title = "AC and DC Conductivities in an n-GaAs/AlAs Heterostructure with a Wide Quantum Well in the Integer Quantum Hall Effect Regime",
abstract = "The direct-current (dc) σxxdc and alternating-current (ac) σxxac=σ1−iσ2 conductivities of a wide (46 nm) GaAs quantum well with the bilayer electron density distribution are measured. It is found that the magnetic field dependence of σxx exhibits three sets of oscillations related to the transitions between Landau levels in symmetric and antisymmetric subbands and with the transitions occurring owing to the Zeeman splitting of these subbands. The analysis of the frequency dependence of the ac conductivity and the σ1/σ2 ratio demonstrates that the conductivity at the minima of oscillations is determined by the hopping mechanism.",
keywords = "OSCILLATIONS, DEPENDENCE, SCATTERING",
author = "Dmitriev, {A. A.} and Drichko, {I. L.} and Smirnov, {I. Yu} and Bakarov, {A. K.} and Bykov, {A. A.}",
year = "2019",
month = jul,
day = "1",
doi = "10.1134/S0021364019130095",
language = "English",
volume = "110",
pages = "68--73",
journal = "JETP Letters",
issn = "0021-3640",
publisher = "MAIK NAUKA/INTERPERIODICA/SPRINGER",
number = "1",

}

RIS

TY - JOUR

T1 - AC and DC Conductivities in an n-GaAs/AlAs Heterostructure with a Wide Quantum Well in the Integer Quantum Hall Effect Regime

AU - Dmitriev, A. A.

AU - Drichko, I. L.

AU - Smirnov, I. Yu

AU - Bakarov, A. K.

AU - Bykov, A. A.

PY - 2019/7/1

Y1 - 2019/7/1

N2 - The direct-current (dc) σxxdc and alternating-current (ac) σxxac=σ1−iσ2 conductivities of a wide (46 nm) GaAs quantum well with the bilayer electron density distribution are measured. It is found that the magnetic field dependence of σxx exhibits three sets of oscillations related to the transitions between Landau levels in symmetric and antisymmetric subbands and with the transitions occurring owing to the Zeeman splitting of these subbands. The analysis of the frequency dependence of the ac conductivity and the σ1/σ2 ratio demonstrates that the conductivity at the minima of oscillations is determined by the hopping mechanism.

AB - The direct-current (dc) σxxdc and alternating-current (ac) σxxac=σ1−iσ2 conductivities of a wide (46 nm) GaAs quantum well with the bilayer electron density distribution are measured. It is found that the magnetic field dependence of σxx exhibits three sets of oscillations related to the transitions between Landau levels in symmetric and antisymmetric subbands and with the transitions occurring owing to the Zeeman splitting of these subbands. The analysis of the frequency dependence of the ac conductivity and the σ1/σ2 ratio demonstrates that the conductivity at the minima of oscillations is determined by the hopping mechanism.

KW - OSCILLATIONS

KW - DEPENDENCE

KW - SCATTERING

UR - http://www.scopus.com/inward/record.url?scp=85071854533&partnerID=8YFLogxK

U2 - 10.1134/S0021364019130095

DO - 10.1134/S0021364019130095

M3 - Article

AN - SCOPUS:85071854533

VL - 110

SP - 68

EP - 73

JO - JETP Letters

JF - JETP Letters

SN - 0021-3640

IS - 1

ER -

ID: 21465647