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A Study of the Crystal Structure of Co40Fe40B20 Epitaxial Films on a Bi2Te3 Topological Insulator. / Kaveev, A. K.; Suturin, S. M.; Sokolov, N. S. и др.

в: Technical Physics Letters, Том 44, № 3, 01.03.2018, стр. 184-186.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Kaveev, AK, Suturin, SM, Sokolov, NS, Kokh, KA & Tereshchenko, OE 2018, 'A Study of the Crystal Structure of Co40Fe40B20 Epitaxial Films on a Bi2Te3 Topological Insulator', Technical Physics Letters, Том. 44, № 3, стр. 184-186. https://doi.org/10.1134/S1063785018030082

APA

Kaveev, A. K., Suturin, S. M., Sokolov, N. S., Kokh, K. A., & Tereshchenko, O. E. (2018). A Study of the Crystal Structure of Co40Fe40B20 Epitaxial Films on a Bi2Te3 Topological Insulator. Technical Physics Letters, 44(3), 184-186. https://doi.org/10.1134/S1063785018030082

Vancouver

Kaveev AK, Suturin SM, Sokolov NS, Kokh KA, Tereshchenko OE. A Study of the Crystal Structure of Co40Fe40B20 Epitaxial Films on a Bi2Te3 Topological Insulator. Technical Physics Letters. 2018 март 1;44(3):184-186. doi: 10.1134/S1063785018030082

Author

Kaveev, A. K. ; Suturin, S. M. ; Sokolov, N. S. и др. / A Study of the Crystal Structure of Co40Fe40B20 Epitaxial Films on a Bi2Te3 Topological Insulator. в: Technical Physics Letters. 2018 ; Том 44, № 3. стр. 184-186.

BibTeX

@article{2e67cd513c9c4c40a9b25cbd6e54e9e9,
title = "A Study of the Crystal Structure of Co40Fe40B20 Epitaxial Films on a Bi2Te3 Topological Insulator",
abstract = "Laser molecular-beam epitaxy has been used to form Co40Fe40B20 layers on Bi2Te3 topological insulator substrates, and their growth conditions have been studied. The possibility of growing epitaxial ferromagnetic layers on the surface of a topological insulator is demonstrated for the first time. The CoFeB layers have a body-centered cubic crystal structure with the (111) crystal plane parallel to the (0001) plane of Bi2Te3. 3D mapping in the reciprocal space of high-energy electron-diffraction patterns made it possible to determine the epitaxial relationships between the film and the substrate.",
author = "Kaveev, {A. K.} and Suturin, {S. M.} and Sokolov, {N. S.} and Kokh, {K. A.} and Tereshchenko, {O. E.}",
note = "Publisher Copyright: {\textcopyright} 2018, Pleiades Publishing, Ltd.",
year = "2018",
month = mar,
day = "1",
doi = "10.1134/S1063785018030082",
language = "English",
volume = "44",
pages = "184--186",
journal = "Technical Physics Letters",
issn = "1063-7850",
publisher = "PLEIADES PUBLISHING INC",
number = "3",

}

RIS

TY - JOUR

T1 - A Study of the Crystal Structure of Co40Fe40B20 Epitaxial Films on a Bi2Te3 Topological Insulator

AU - Kaveev, A. K.

AU - Suturin, S. M.

AU - Sokolov, N. S.

AU - Kokh, K. A.

AU - Tereshchenko, O. E.

N1 - Publisher Copyright: © 2018, Pleiades Publishing, Ltd.

PY - 2018/3/1

Y1 - 2018/3/1

N2 - Laser molecular-beam epitaxy has been used to form Co40Fe40B20 layers on Bi2Te3 topological insulator substrates, and their growth conditions have been studied. The possibility of growing epitaxial ferromagnetic layers on the surface of a topological insulator is demonstrated for the first time. The CoFeB layers have a body-centered cubic crystal structure with the (111) crystal plane parallel to the (0001) plane of Bi2Te3. 3D mapping in the reciprocal space of high-energy electron-diffraction patterns made it possible to determine the epitaxial relationships between the film and the substrate.

AB - Laser molecular-beam epitaxy has been used to form Co40Fe40B20 layers on Bi2Te3 topological insulator substrates, and their growth conditions have been studied. The possibility of growing epitaxial ferromagnetic layers on the surface of a topological insulator is demonstrated for the first time. The CoFeB layers have a body-centered cubic crystal structure with the (111) crystal plane parallel to the (0001) plane of Bi2Te3. 3D mapping in the reciprocal space of high-energy electron-diffraction patterns made it possible to determine the epitaxial relationships between the film and the substrate.

UR - http://www.scopus.com/inward/record.url?scp=85045644408&partnerID=8YFLogxK

U2 - 10.1134/S1063785018030082

DO - 10.1134/S1063785018030082

M3 - Article

AN - SCOPUS:85045644408

VL - 44

SP - 184

EP - 186

JO - Technical Physics Letters

JF - Technical Physics Letters

SN - 1063-7850

IS - 3

ER -

ID: 12690761